UCC27322DGNR - 9A Single Low-Side MOSFET Driver | Texas Instruments
料号： UCC27322DGNR ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.72 | $1.72 |
| 10 | $1.55 | $15.50 |
| 100 | $1.38 | $138.00 |
| 500 | $1.22 | $610.00 |
| 1,000 | $1.07 | $1,070.00 |
| 3,000 | $0.92 | $2,760.00 |
UCC27322DGNR 概述
Background knowledge: a low-side gate driver is a power-management IC that switches the gate of an N-channel MOSFET (or IGBT) between the source/ground rail and the gate-drive voltage. By sourcing and sinking high peak current into the gate capacitance, it dramatically reduces the Miller-plateau transition time versus driving the MOSFET directly from a logic output. Within the broader taxonomy, low-side gate drivers fall under gate-driver ICs -> MOSFET/IGBT drivers -> power management ICs -> semiconductors. The UCC27322 family specifically targets sub-20 V rails where a true low-side (ground-referenced) topology is acceptable.
Key features include 9 A peak source and 9 A peak sink current using TI's TrueDrive mixed Bipolar/CMOS output stage, TTL/CMOS-compatible logic inputs, 4 V to 15 V VDD supply range, 20 ns typical rise/fall times into a 1.8 nF load, and an enable pin for sequential power-up. The split OUTH/OUTL pins allow independent tuning of turn-on and turn-off gate resistors - useful for EMI control and ringing management.
The architecture uses TI's TrueDrive topology, which combines bipolar drive transistors with CMOS bias circuitry to deliver high peak current while avoiding the shoot-through losses of pure CMOS drivers. Internal hysteresis on the EN pin rejects false triggers from slow-rising MCU signals.
Typical applications include switch-mode power supplies (synchronous-rectifier and primary-side MOSFET drive), motor-drive half-bridges for the low-side switch, solenoid and piezo-actuator drivers, and Class-D audio amplifier output stages. The wide supply range also makes it suitable for 12 V industrial systems.
Design consideration: keep the gate-driver within 1 cm of the MOSFET gate pad to minimize parasitic loop inductance - high di/dt at 9 A peak can otherwise ring above the MOSFET VGS rating. Use independent turn-on and turn-off resistors on OUTH and OUTL for EMI tuning.
This page synthesizes distributor pricing, verified drop-in alternatives from the UCC2732x/UCC3732x family, and practical PCB-layout design notes not found in the manufacturer datasheet alone.
直接替换替代料： UCC27322DGNR ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： UCC27322DGNR （相同外形与封装尺寸） ——差异在于 Operating Temperature, Output Configuration, Package.
快速对比工具——选择替代料号进行并排对比：
UCC27323DGNR
✅ 直接替换📋 参考替代料（不在目录中）
UCC37322DGNR
✅ 直接替换📋 参考替代料（不在目录中）
UCC37321DGN
✅ 直接替换📋 参考替代料（不在目录中）
MIC4427YM
✅ 直接替换📋 参考替代料（不在目录中）
UCC27322DGNR 最大额定值与电气特性
| 功能 | Single low-side gate driver |
| Number of Channels | 1 |
| Peak Source Current | 9 A |
| Peak Sink Current | 9 A |
| Supply Voltage (VDD) | 4 V to 15 V |
| Logic Input Type | Non-Inverting (TTL/CMOS) |
| VIL / VIH Thresholds | 1.1 V / 2.7 V |
| Rise Time (typical, 1.8 nF load) | 20 ns |
| Fall Time (typical, 1.8 nF load) | 20 ns |
| 使能引脚 | Yes (active-high) |
| 输出配置 | Split outputs (OUTH source, OUTL sink) |
| 工作温度 | -40 C to +105 C |
| 封装 | HVSSOP-8 (DGN) PowerPAD |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
UCC27322DGNR 引脚配置
| 引脚 1 | EN — Enable input (active-high); logic low places driver in high-impedance state |
| 引脚 2 | IN — Logic input (non-inverting); TTL/CMOS compatible |
| 引脚 3 | GND — Ground return for input logic and output stage |
| 引脚 4 | OUTL — Low-side sink output (open-drain NMOS pull to GND) - connect to MOSFET gate via optional turn-off resistor |
| 引脚 5 | OUTH — High-side source output (push-pull PMOS pull to VDD) - connect to MOSFET gate via optional turn-on resistor |
| 引脚 6 | VDD — Supply voltage input (4 V to 15 V); bypass with 1 uF X7R ceramic to GND |
| 引脚 7 | NC — Not connected (per datasheet) |
| 引脚 8 | EP — Exposed thermal pad (PowerPAD); must be soldered to GND copper pour for thermal dissipation |
典型应用
UCC27322DGNR 适用于 6 应用s: Switch-Mode Power Supply MOSFET Drive, Synchronous Rectifier Drive, Motor Drive Half-Bridge (Low-Side), Solenoid and Piezo Actuator Driver, Class-D Audio Amplifier Output Stage, Industrial 24 V System Power Switching.
Switch-Mode Power Supply MOSFET Drive
The UCC27322DGNR fits SMPS low-side MOSFET drive because its 9 A peak source/sink current slews the gate through the Miller plateau in nanoseconds - directly cutting switching loss. Placed within 1 cm of the low-side MOSFET gate with VDD bypassed by a 1 uF X7R ceramic, it easily drives MOSFETs up to ~200 nC Qg at 500 kHz. Compared with discrete push-pull BJT drivers, the UCC27322DGNR delivers tighter propagation delay and removes shoot-through risk.
推荐
Synchronous Rectifier Drive
The UCC27322DGNR is well suited for synchronous-rectifier low-side drive in buck converters because its split OUTH/OUTL outputs let the designer use a small turn-on resistor (fast switching) and a larger turn-off resistor (damped, low EMI). Its 9 A sink capability discharges Qg quickly, eliminating dead-time losses. Typical use is paired with a high-side driver like UCC21530 in a half-bridge configuration feeding 12 V input to a 1 V output POL.
推荐
Motor Drive Half-Bridge (Low-Side)
The UCC27322DGNR drives the low-side switch in brushed-DC or permanent-magnet motor half-bridges where 12-24 V rails and high di/dt switching are common. Its -40 C to +105 C industrial temperature range handles automotive underhood environments, and the 9 A peak easily overcomes the Miller plateau of 40-100 V-rated IGBTs or MOSFETs. Using split outputs avoids cross-conduction by letting the designer add turn-off delay via OUTL resistance.
推荐
Solenoid and Piezo Actuator Driver
The UCC27322DGNR's 9 A peak and 20 ns rise time let it drive inductive solenoids and piezo actuators with sharp, repeatable edges. The active-high EN pin permits precise sequencing when multiple actuators must be fired in a defined order. With split outputs, designers add a flyback or snubber resistor on OUTL to manage back-EMF without slowing turn-on. This combination is common in industrial dispensing and inkjet printhead systems.
推荐
Class-D Audio Amplifier Output Stage
The UCC27322DGNR drives the output MOSFETs of Class-D audio amplifiers, where low distortion and high efficiency demand fast gate transitions with controlled dV/dt. Its split OUTH/OUTL pins enable independent rise/fall shaping - critical for EMI compliance in consumer audio products. The 9 A peak supports MOSFETs up to 60 V VDS, common in 100 W+ subwoofer amplifiers. Audio-band noise floor is set by the TrueDrive architecture's clean gate edges.
推荐
Industrial 24 V System Power Switching
The UCC27322DGNR accepts the 15 V VDD derived from a 24 V industrial bus via a small buck regulator, switching high-current loads such as relays, heaters, or stepper coils. Its TTL-compatible inputs interface directly to 3.3 V or 5 V MCUs without level shifters, simplifying the BOM. The HVSSOP PowerPAD package delivers the thermal performance needed for continuous high-current switching at industrial ambient temperatures up to 105 C.
推荐
推荐产品汇总
工程参考数据： UCC27322DGNR ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | UCC27323DGNR | UCC37322DGNR | UCC37321DGN | MIC4427YM |
|---|---|---|---|---|---|
| Package | HVSSOP-8 (DGN) PowerPAD | HVSSOP-8 (DGN) PowerPAD - same | HVSSOP-8 (DGN) PowerPAD - same | MSOP-8 PowerPAD - same outline | MSOP-8 with thermal pad - same outline |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Microchip Technology |
| Peak Source/Sink Current | 9 A / 9 A | 9 A / 9 A | 9 A / 9 A | 9 A / 9 A | 9 A / 9 A |
| Supply Voltage (VDD) | 4 V to 15 V | 4 V to 15 V | 4 V to 15 V | 4 V to 15 V | 4.5 V to 18 V |
| Logic Polarity | Non-Inverting | Inverting | Non-Inverting | Non-Inverting | Non-Inverting |
| Enable Pin | Yes (active-high) | Yes (active-high) | Yes (active-high) | No enable | No enable |
| Operating Temperature | -40 C to +105 C | -40 C to +105 C | 0 C to +70 C | 0 C to +70 C | -40 C to +85 C |
关键差异点
- Split OUTH/OUTL outputs for independent turn-on/turn-off tuning （对比 MIC4427YM)
- Active-high enable pin for power sequencing （对比 UCC37321DGN)
- Extended industrial temperature range （对比 UCC37322DGNR)
设计说明
Place the UCC27322DGNR within 1 cm of the driven MOSFET gate pad to minimize parasitic loop inductance. At 9 A peak into a few hundred nC of gate charge, even 10 nH of stray inductance can ring above the MOSFET VGS rating. Use a 1 uF X7R ceramic bypass capacitor from VDD to GND, placed within 2 mm of pin 6, with a 0.1 uF parallel cap for high-frequency decoupling. The exposed thermal pad (pin 8) must be soldered to a ground copper pour of at least 100 mm^2 to keep junction temperature within the 105 C ambient rating at full drive current.
Use independent turn-on (OUTH) and turn-off (OUTL) gate resistors when EMI or ringing is a concern. A typical starting point is R_ON = 5-10 ohm for fast switching and R_OFF = 10-33 ohm to damp the gate-source loop. If the OUTH/OUTL pins are tied together for a single resistor, EMI tuning becomes difficult. Keep the gate-drive loop area (driver output -> gate -> source -> ground -> driver GND) to a minimum by routing the gate trace and ground return on adjacent layers.
Do not leave the EN pin floating - it must be tied to VDD through a 100 kohm pull-up, or the driver may be in an indeterminate state at power-up. Do not exceed 15 V on VDD; the absolute maximum is 16 V per the TI datasheet. If driving a bootstrap high-side switch with this part, remember that UCC27322 is a low-side driver only and the high-side gate-source voltage will not be referenced to ground - use a UCC21530 isolated driver instead. Avoid back-to-back capacitive loads exceeding 1.8 nF without re-checking the 20 ns rise time, as the actual transition slows with higher Ciss.
合规信息
RoHS compliant per DigiKey Marketplace listing 1911359 and TI product page. Not AEC-Q100 qualified - industrial temperature grade only. Halogen-free status not explicitly stated in provided data.
