BSS84-7-F-W vs BSS84-7-F مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ BSS84-7-F-W بواسطة Diodes Incorporated و BSS84-7-F بواسطة Diodes Incorporated. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | BSS84-7-F-W | BSS84-7-F |
|---|---|---|
| العلامة التجارية | Diodes Incorporated | Diodes Incorporated |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Transistor Polarity | P-Channel | P-Channel |
| Channel Type | Enhancement Mode | — |
| Drain-Source Voltage (Vdss) | 50 V | — |
| Continuous Drain Current (Id) | 130 mA (Ta) | — |
| Power Dissipation (Pd) | 300 mW (Ta) | — |
| On-State Resistance RDS(on) | 10 Ohm (max, per Future Electronics listing) | [DATA_NEEDED: On-State Resistance RDS(on)] |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max rating] | — |
| Gate Threshold Voltage (Vgs th) | [DATA_NEEDED: Vgs threshold] | — |
| Number of Channels | 1 | — |
| العلبة | SOT-23-3 | SOT-23-3 |
| نوع التركيب | Surface Mount | Surface Mount |
| Terminal Finish | Matte Tin plated, solderable per MIL-STD-202 | Matte tin plated (solderable per MIL-STD-202) |
| درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | — |
| Packaging | Tape & Reel (3K per reel, -W suffix) | — |
| حالة RoHS | Compliant | Compliant |
| Technology | Si (silicon DMOS) | Si |
| Mode of Operation | — | Enhancement Mode |
| Drain-Source Voltage VDS | — | 50 V |
| Continuous Drain Current ID | — | 130 mA (Ta) |
| Power Dissipation PD | — | 300 mW (Ta) |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: Gate-Source Voltage VGS] |
| Gate-Source Threshold Voltage VGS(th) | — | [DATA_NEEDED: Gate-Source Threshold Voltage] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Total Gate Charge] |
| Input Capacitance Ciss | — | [DATA_NEEDED: Input Capacitance Ciss] |
| Configuration | — | Single FET |
| Packaging Suffix | — | -7-F (Tape and Reel) |