EP1SGX40GF800C5N vs EP1SGX40GF1020C5N مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ EP1SGX40GF800C5N بواسطة Intel و EP1SGX40GF1020C5N بواسطة Intel. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | EP1SGX40GF800C5N | EP1SGX40GF1020C5N |
|---|---|---|
| العلامة التجارية | Intel | Intel |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | Obsolete | Obsolete |
| Family | Stratix GX | Stratix |
| Logic Elements | 41,250 | 41,250 |
| Total RAM Bits | 3,432,192 (3.4 Mbit) | 3,423,744 |
| DSP Blocks | 14 | — |
| Embedded Multipliers (9-bit equivalent) | 56 | — |
| Transceiver Channels | 20 (up to 3.1875 Gbps per channel) | — |
| Maximum User I/O Pins | [DATA_NEEDED: max user I/O count for 780-pin BGA] | — |
| PLLs | 24 | — |
| Clock Networks | 8 phase-locked | — |
| العلبة | 780-pin FineLine BGA | 1020-BGA / FC-FBGA (33 x 33 mm, 1 mm pitch) |
| Speed Grade | -5 (slower than -6/-7) | C5 (Commercial, slow) |
| درجة حرارة التشغيل | Commercial (0C to +85C) | 0 °C to +85 °C (Commercial) |
| Core Voltage | 1.5 V | — |
| Process Technology | 0.13 µm SRAM | 130 nm CMOS |
| Configuration Method | EPC enhanced configuration devices or JTAG | JTAG / SRAM (volatile) + EEPROM loader |
| حالة RoHS | [DATA_NEEDED: explicit RoHS statement for this specific MPN] | Compliant (lead-free) |
| Lead-Free | [DATA_NEEDED: lead-free finish] | — |
| Series | — | Stratix GX |
| Logic Array Blocks (LABs) | — | 4,125 |
| Maximum User I/O | — | 624 |
| Core Supply Voltage | — | 1.5 V (1.425 V - 1.575 V) |
| Pin / Ball Count | — | 1020 |
| نوع التركيب | — | Surface Mount (BGA) |
| Logic Family | — | CMOS |
| Maximum Internal Performance | — | 5000 MHz (per third-party listings) |