EP1SGX40GF800C5N vs EP1SGX40GF1020C5N तुलना
विस्तृत दोनों ओर की तुलना EP1SGX40GF800C5N द्वारा Intel और EP1SGX40GF1020C5N द्वारा Intel. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | EP1SGX40GF800C5N | EP1SGX40GF1020C5N |
|---|---|---|
| ब्रांड | Intel | Intel |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | Obsolete | Obsolete |
| Family | Stratix GX | Stratix |
| Logic Elements | 41,250 | 41,250 |
| Total RAM Bits | 3,432,192 (3.4 Mbit) | 3,423,744 |
| DSP Blocks | 14 | — |
| Embedded Multipliers (9-bit equivalent) | 56 | — |
| Transceiver Channels | 20 (up to 3.1875 Gbps per channel) | — |
| Maximum User I/O Pins | [DATA_NEEDED: max user I/O count for 780-pin BGA] | — |
| PLLs | 24 | — |
| Clock Networks | 8 phase-locked | — |
| पैकेज | 780-pin FineLine BGA | 1020-BGA / FC-FBGA (33 x 33 mm, 1 mm pitch) |
| Speed Grade | -5 (slower than -6/-7) | C5 (Commercial, slow) |
| ऑपरेटिंग तापमान | Commercial (0C to +85C) | 0 °C to +85 °C (Commercial) |
| Core Voltage | 1.5 V | — |
| Process Technology | 0.13 µm SRAM | 130 nm CMOS |
| Configuration Method | EPC enhanced configuration devices or JTAG | JTAG / SRAM (volatile) + EEPROM loader |
| RoHS स्थिति | [DATA_NEEDED: explicit RoHS statement for this specific MPN] | Compliant (lead-free) |
| Lead-Free | [DATA_NEEDED: lead-free finish] | — |
| Series | — | Stratix GX |
| Logic Array Blocks (LABs) | — | 4,125 |
| Maximum User I/O | — | 624 |
| Core Supply Voltage | — | 1.5 V (1.425 V - 1.575 V) |
| Pin / Ball Count | — | 1020 |
| माउंटिंग प्रकार | — | Surface Mount (BGA) |
| Logic Family | — | CMOS |
| Maximum Internal Performance | — | 5000 MHz (per third-party listings) |