IAUC100N04S6L014ATMA1 vs IAUC60N04S6N044ATMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IAUC100N04S6L014ATMA1 بواسطة Infineon و IAUC60N04S6N044ATMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ نشطمقارنة المواصفات
| المعامل | IAUC100N04S6L014ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Infineon Technologies | — |
| Part Family | IAUC / OptiMOS 6 40V | — |
| نوع الترانزستور | N-Channel MOSFET | — |
| Mode | Enhancement | — |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | — |
| Power Dissipation (P_D, Tc) | 100 W | — |
| نطاق درجة حرارة التشغيل | -55C to +175C | — |
| العلبة | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-TDSON-8 (5x6 mm) with exposed pad |
| نوع التركيب | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | — |
| Technology | OptiMOS 6 | OptiMOS-6 N-channel trench MOSFET |
| حالة RoHS | Compliant | Compliant |
| مستوى MSL | 1 | 1 (unlimited) |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25°C | — | 60 A |
| Continuous Drain Current (I_D) at Tc=100°C | — | [DATA_NEEDED: pulsed/current derated value] |
| On-Resistance R_DS(on) max @ V_GS=10V | — | 4.4 mΩ |
| On-Resistance R_DS(on) max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25°C | — | 42 W |
| درجة حرارة الوصلة التشغيلية | — | -55°C to +175°C |
| Automotive Qualification | — | AEC-Q101 qualified (IAUC prefix) |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |