IAUC100N04S6L014ATMA1 vs IAUC60N04S6N044ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUC100N04S6L014ATMA1 tarafından Infineon ve IAUC60N04S6N044ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ AktifInfineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUC100N04S6L014ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | IAUC / OptiMOS 6 40V | — |
| Transistor Türü | N-Channel MOSFET | — |
| Mode | Enhancement | — |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | — |
| Power Dissipation (P_D, Tc) | 100 W | — |
| İşletim Sıcaklığı Aralığı | -55C to +175C | — |
| Paket | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Montaj Türü | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | — |
| Technology | OptiMOS 6 | OptiMOS-6 N-channel trench MOSFET |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | 1 | 1 (unlimited) |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25°C | — | 60 A |
| Continuous Drain Current (I_D) at Tc=100°C | — | [DATA_NEEDED: pulsed/current derated value] |
| On-Resistance R_DS(on) max @ V_GS=10V | — | 4.4 mΩ |
| On-Resistance R_DS(on) max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25°C | — | 42 W |
| İşletim Jant Sıcaklığı | — | -55°C to +175°C |
| Automotive Qualification | — | AEC-Q101 qualified (IAUC prefix) |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |