IAUC120N04S6L005ATMA1 vs IAUC120N04S6L009ATMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IAUC120N04S6L005ATMA1 بواسطة Infineon و IAUC120N04S6L009ATMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Infineon
IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΩ N-Channel MOSFET | Infineon
IAUC120N04S6L005ATMA1 ✓ نشطInfineon
IAUC120N04S6L009ATMA1 - 40V 0.9mΩ 120A OptiMOS-6 MOSFET | Infineon
IAUC120N04S6L009ATMA1 ✓ نشطمقارنة المواصفات
| المعامل | IAUC120N04S6L005ATMA1 | IAUC120N04S6L009ATMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUC120N04S6L005ATMA1 | — |
| Technology | OptiMOS 6, N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 120 A (Tj) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| Power Dissipation (PD, Tc=25°C) | 187 W | — |
| RDS(on) max at VGS=10 V | 0.55 mΩ at 60 A | — |
| RDS(on) max at VGS=4.5 V | 0.85 mΩ | — |
| Gate-Source Voltage (VGS) | ±16 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| Total Gate Charge (Qg) | 177 nC at VGS=10 V | — |
| Input Capacitance (Ciss) | 11.203 nF at 25 V | — |
| Output Capacitance (Coss) | 2.982 nF | — |
| Reverse Transfer Capacitance (Crss) | 175 pF | — |
| درجة حرارة الوصلة التشغيلية | -55 °C to +175 °C | -55 °C to +175 °C |
| العلبة | PG-TDSON-8-53 (5x6 mm) | PG-TDSON-8-34 (5x6 mm leadless, SS08) |
| نوع التركيب | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| حالة RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS-6 40V |
| نوع الترانزستور | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 150 A (per datasheet header) |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=100°C) | — | [DATA_NEEDED: I_D at TC=100C] |
| Pulsed Drain Current (I<sub>DM</sub>) | — | [DATA_NEEDED: pulsed I_DM] |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | — | 0.9 mΩ |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage V<sub>GS(th)</sub> | — | [DATA_NEEDED: VGS(th) typ/range] |
| Gate Charge Q<sub>g</sub> | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25°C) | — | 150 W |
| عدد الأطراف | — | 8 |
| AEC-Q101 Automotive Qualification | — | Yes |
| مستوى MSL | — | [DATA_NEEDED: MSL rating] |
| Avalanche Energy E<sub>AS</sub> | — | [DATA_NEEDED: single-pulse avalanche energy] |