IRLB3813PBF vs IRF1405PBF مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IRLB3813PBF بواسطة Infineon و IRF1405PBF بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IRLB3813PBF | IRF1405PBF |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| FET Type | N-Channel | — |
| Technology | StrongIRFET (HEXFET) | HEXFET (Stripe Planar cell structure) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Tc=25C | 260 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10V | 1.95 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | 57 nC (typical, per Mouser snippet) | — |
| Power Dissipation (PD) at Tc=25C | 230 W | — |
| درجة حرارة الوصلة التشغيلية | -55C to +175C (industry typical, [DATA_NEEDED for datasheet confirmation]) | — |
| العلبة | TO-220AB (through-hole) | TO-220AB (through-hole) |
| نوع التركيب | Through Hole | Through Hole |
| Gate Drive Level | Logic-level (fully enhanced at 4.5 V VGS) | — |
| Avalanche Rated | Yes (per datasheet: fully characterised avalanche voltage and current) | — |
| Qualification Standard | JEDEC (industrial market) | — |
| حالة RoHS | Compliant (Pb-free suffix PBF) | PbF suffix indicates lead-free / RoHS compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | — | PbF (lead-free, RoHS compliant) |
| نوع الترانزستور | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 55 V |
| Continuous Drain Current (I_D, Tc=25C) | — | 169 A |
| Continuous Drain Current (I_D, Tc=100C) | — | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current rating] |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 330 W |
| R_DS(on) Maximum | — | 5.3 mOhm @ V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | — | 2.0 V to 4.0 V |
| Maximum Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: maximum V_GS rating] |
| Operating Junction Temperature (T_J max) | — | 175 C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Qualification | — | JEDEC qualified, optimized for switching below 100 kHz |
| Single Pulse Avalanche Energy (E_AS) | — | [DATA_NEEDED: avalanche energy rating] |
| Thermal Resistance Junction-to-Case (R_theta_JC) | — | [DATA_NEEDED: thermal resistance R_theta_JC] |