IRLB3813PBF vs IRF1405PBF موازنہ
تفصیلی ساتھ ساتھ موازنہ از IRLB3813PBF بذریعہ Infineon اور IRF1405PBF بذریعہ Infineon. اہم خصوصیات، برقی پیرامیٹرز، پیکیجنگ، لائف سائیکل اسٹیٹس، قیمتوں اور دستیابی کا موازنہ کریں تاکہ آپ کی ڈیزائن ضروریات کے لیے بہترین کمپوننٹ کا تعین ہو سکے۔
خصوصیات کا موازنہ
| پیرامیٹر | IRLB3813PBF | IRF1405PBF |
|---|---|---|
| برانڈ | Infineon | Infineon |
| زمرہ | MOSFETs | MOSFETs |
| لائف سائیکل کی حالت | فعال | فعال |
| FET Type | N-Channel | — |
| Technology | StrongIRFET (HEXFET) | HEXFET (Stripe Planar cell structure) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Tc=25C | 260 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10V | 1.95 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | 57 nC (typical, per Mouser snippet) | — |
| Power Dissipation (PD) at Tc=25C | 230 W | — |
| آپریٹنگ جنکشن درجہ حرارت | -55C to +175C (industry typical, [DATA_NEEDED for datasheet confirmation]) | — |
| پیکیج | TO-220AB (through-hole) | TO-220AB (through-hole) |
| ماؤنٹنگ ٹائپ | Through Hole | Through Hole |
| Gate Drive Level | Logic-level (fully enhanced at 4.5 V VGS) | — |
| Avalanche Rated | Yes (per datasheet: fully characterised avalanche voltage and current) | — |
| Qualification Standard | JEDEC (industrial market) | — |
| RoHS اسٹیٹس | Compliant (Pb-free suffix PBF) | PbF suffix indicates lead-free / RoHS compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | — | PbF (lead-free, RoHS compliant) |
| ٹرانزسٹر کی قسم | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 55 V |
| Continuous Drain Current (I_D, Tc=25C) | — | 169 A |
| Continuous Drain Current (I_D, Tc=100C) | — | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current rating] |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 330 W |
| R_DS(on) Maximum | — | 5.3 mOhm @ V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | — | 2.0 V to 4.0 V |
| Maximum Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: maximum V_GS rating] |
| Operating Junction Temperature (T_J max) | — | 175 C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Qualification | — | JEDEC qualified, optimized for switching below 100 kHz |
| Single Pulse Avalanche Energy (E_AS) | — | [DATA_NEEDED: avalanche energy rating] |
| Thermal Resistance Junction-to-Case (R_theta_JC) | — | [DATA_NEEDED: thermal resistance R_theta_JC] |