K9DUGB8S7M vs K9PKGY8S7M-CCK0 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ K9DUGB8S7M بواسطة Samsung Electronics و K9PKGY8S7M-CCK0 بواسطة Samsung Electronics. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | K9DUGB8S7M | K9PKGY8S7M-CCK0 |
|---|---|---|
| العلامة التجارية | Samsung Electronics | Samsung Electronics |
| الفئة | Memory ICs | Memory ICs |
| حالة دورة الحياة | نشط | نشط |
| نوع الذاكرة | NAND Flash | NAND Flash |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Ordering Code | K9DUGB8S7M-DCK0 | — |
| الواجهة | [DATA_NEEDED: interface type (x8/x16 asynchronous NAND)] | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| Memory Capacity | [DATA_NEEDED: total capacity] | 128 Gb (16 GB) |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| جهد التغذية | [DATA_NEEDED: supply voltage range] | [DATA_NEEDED: supply voltage] |
| Package Type | [DATA_NEEDED: package type] | — |
| نوع التركيب | Surface Mount | Surface Mount |
| Access Time / Timing Grade | [DATA_NEEDED: speed grade] | — |
| درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| ECC Requirement | [DATA_NEEDED: ECC scheme] | — |
| حالة RoHS | [DATA_NEEDED: RoHS compliance] | Lead free / RoHS compliant |
| مستوى MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| العلبة | — | BGA |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycle endurance] |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |