K9DUGB8S7M vs K9PKGY8S7M-CCK0 مقایسه
مقایسه دقیق کنار به کنار K9DUGB8S7M توسط Samsung Electronics و K9PKGY8S7M-CCK0 توسط Samsung Electronics. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | K9DUGB8S7M | K9PKGY8S7M-CCK0 |
|---|---|---|
| برند | Samsung Electronics | Samsung Electronics |
| دسته‌بندی | Memory ICs | Memory ICs |
| وضعیت چرخه عمر | فعال | فعال |
| نوع حافظه | NAND Flash | NAND Flash |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Ordering Code | K9DUGB8S7M-DCK0 | — |
| رابط | [DATA_NEEDED: interface type (x8/x16 asynchronous NAND)] | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| Memory Capacity | [DATA_NEEDED: total capacity] | 128 Gb (16 GB) |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| ولتاژ تغذیه | [DATA_NEEDED: supply voltage range] | [DATA_NEEDED: supply voltage] |
| Package Type | [DATA_NEEDED: package type] | — |
| نوع نصب | Surface Mount | Surface Mount |
| Access Time / Timing Grade | [DATA_NEEDED: speed grade] | — |
| دمای کاری | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| ECC Requirement | [DATA_NEEDED: ECC scheme] | — |
| وضعیت RoHS | [DATA_NEEDED: RoHS compliance] | Lead free / RoHS compliant |
| سطح MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| بسته‌بندی | — | BGA |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycle endurance] |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |