K9HQGY8S5M vs K9DUGY8S0M-CCK0 مقارنة

مقارنة تفصيلية جنبًا إلى جنب لـ K9HQGY8S5M بواسطة Samsung Electronics و K9DUGY8S0M-CCK0 بواسطة Samsung Electronics. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.

Samsung Electronics
K9HQGY8S5M K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M ✓ نشط
Samsung Electronics
K9DUGY8S0M-CCK0 K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung

K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung

K9DUGY8S0M-CCK0 ✓ نشط

مقارنة المواصفات

المعامل K9HQGY8S5M K9DUGY8S0M-CCK0
العلامة التجارية Samsung Electronics Samsung Electronics
الفئة Memory ICs Memory ICs
حالة دورة الحياة نشط نشط
Manufacturer Samsung Electronics Samsung Electronics
Product Type 3D V-NAND Flash Memory (stacked, client NAND) —
Package Type 316-ball Fine Pitch BGA (FBGA-316) —
Die Configuration 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) —
NAND Technology 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) —
Memory Class Non-volatile NAND flash —
الواجهة NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] [DATA_NEEDED: interface type/width]
Density [DATA_NEEDED: total bit density] [DATA_NEEDED: density]
جهد التغذية [DATA_NEEDED: VCC range] [DATA_NEEDED: VCC range]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Program/Erase Cycles [DATA_NEEDED: P/E endurance rating] —
نوع التركيب Surface Mount (BGA) Surface Mount
درجة حرارة التشغيل [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
حالة RoHS [DATA_NEEDED: RoHS status] unknown
مستوى MSL [DATA_NEEDED: moisture sensitivity level] —
Original Application Samsung SSD 850 Pro solid-state drive —
Product Family — K9 series NAND Flash (V-NAND)
نوع الذاكرة — NAND Flash (raw, controller-managed)
Cell Technology — V-NAND (vertical charge-trap)
Page Program Time — [DATA_NEEDED: tPROG]
Block Erase Time — [DATA_NEEDED: tBERS]
Read Time — [DATA_NEEDED: tR]
العلبة — [DATA_NEEDED: package code and pin count]
P/E Cycle Endurance — [DATA_NEEDED: endurance]

أوراق البيانات والموارد

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