MBR20200CT vs SR2020CT مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MBR20200CT بواسطة Taiwan Semiconductor و SR2020CT بواسطة Galaxy Semiconductor. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Taiwan Semiconductor
MBR20200CT - 200V 20A Dual Schottky Rectifier | Taiwan Semiconductor
MBR20200CT ✓ نشطGalaxy Semiconductor
SR2020CT - 20A 20V Dual Schottky Rectifier | Galaxy Semiconductor
SR2020CT ✓ نشطمقارنة المواصفات
| المعامل | MBR20200CT | SR2020CT |
|---|---|---|
| العلامة التجارية | Taiwan Semiconductor | Galaxy Semiconductor |
| الفئة | Diodes | Diodes |
| حالة دورة الحياة | نشط | نشط |
| البنية الطوبولوجية | Diode Array, 1 Pair, Common Cathode | — |
| Diode Type | Schottky Barrier Rectifier | — |
| Repetitive Peak Reverse Voltage (VRRM) | 200 V | — |
| Average Rectified Forward Current (IF(AV)) | 10 A per leg, 20 A per package (TC = 161 C) | — |
| Peak Repetitive Forward Current (IFRM) | 20 A per leg (square wave, 20 kHz, TC = 158 C) | — |
| Non-Repetitive Peak Surge Current (IFSM) | 150 A | — |
| Peak Repetitive Reverse Current (IRRM) | 1.0 A (2.0 us, 1.0 kHz) | — |
| Forward Voltage (VF) | [DATA_NEEDED: Forward Voltage at rated current] | [DATA_NEEDED: Forward Voltage VF] |
| Maximum Junction Temperature (TJ) | 175 C | — |
| Storage Temperature Range (Tstg) | -65 C to +175 C | — |
| العلبة | TO-220AB (TO-220-3, 3-pin + tab), Through Hole | TO-220AB |
| نوع التركيب | Through Hole | Through-hole, tab for heatsink mounting |
| Technology | Schottky barrier with platinum barrier metal, epitaxial construction, oxide passivation | Metal-semiconductor junction, epitaxial construction with guard ring |
| Intended Applications | SMPS and converters with outputs up to 48 V | — |
| Lead Finish | Pb-free, corrosion resistant, readily solderable | — |
| Molding Compound | UL 94V-0 flammability rated | — |
| Package Outline Standard | JEDEC TO-220AB | — |
| حالة RoHS | Compliant (Pb-free device) | [DATA_NEEDED: RoHS compliance statement] |
| Device Type | — | Dual Schottky Barrier Rectifier (center-tap, common cathode) |
| Maximum Repetitive Reverse Voltage (VRRM) | — | 20 V |
| Maximum Average Forward Current (IF(AV)) | — | 20 A |
| Forward Current per Leg | — | 10 A (dual configuration, datasheet family 20 A total rating) |
| Reverse Voltage Family Range | — | 20 V to 60 V (SR2020CT through SR2060CT) |
| Peak Non-Repetitive Surge Current (IFSM) | — | [DATA_NEEDED: IFSM] |
| Reverse Recovery Time (trr) | — | Negligible (majority carrier Schottky conduction) |
| Flammability Classification | — | UL 94V-0 |
| درجة حرارة التشغيل | — | [DATA_NEEDED: Operating Junction Temperature Range] |
| Configuration | — | Common cathode dual diode |
| Typical Applications | — | Low-voltage high-frequency inverters, SMPS output rectification |