MBR20200CT vs SR2020CT Vergleich
Detaillierter Direktvergleich von MBR20200CT von Taiwan Semiconductor und SR2020CT von Galaxy Semiconductor. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Taiwan Semiconductor
MBR20200CT - 200V 20A Dual Schottky Rectifier | Taiwan Semiconductor
MBR20200CT ✓ AktivGalaxy Semiconductor
SR2020CT - 20A 20V Dual Schottky Rectifier | Galaxy Semiconductor
SR2020CT ✓ AktivSpezifikationsvergleich
| Parameter | MBR20200CT | SR2020CT |
|---|---|---|
| Marke | Taiwan Semiconductor | Galaxy Semiconductor |
| Kategorie | Diodes | Diodes |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,24 | $0,32 |
| Topologie | Diode Array, 1 Pair, Common Cathode | — |
| Diode Type | Schottky Barrier Rectifier | — |
| Repetitive Peak Reverse Voltage (VRRM) | 200 V | — |
| Average Rectified Forward Current (IF(AV)) | 10 A per leg, 20 A per package (TC = 161 C) | — |
| Peak Repetitive Forward Current (IFRM) | 20 A per leg (square wave, 20 kHz, TC = 158 C) | — |
| Non-Repetitive Peak Surge Current (IFSM) | 150 A | — |
| Peak Repetitive Reverse Current (IRRM) | 1.0 A (2.0 us, 1.0 kHz) | — |
| Forward Voltage (VF) | [DATA_NEEDED: Forward Voltage at rated current] | [DATA_NEEDED: Forward Voltage VF] |
| Maximum Junction Temperature (TJ) | 175 C | — |
| Storage Temperature Range (Tstg) | -65 C to +175 C | — |
| Gehäuse | TO-220AB (TO-220-3, 3-pin + tab), Through Hole | TO-220AB |
| Montageart | Through Hole | Through-hole, tab for heatsink mounting |
| Technology | Schottky barrier with platinum barrier metal, epitaxial construction, oxide passivation | Metal-semiconductor junction, epitaxial construction with guard ring |
| Intended Applications | SMPS and converters with outputs up to 48 V | — |
| Lead Finish | Pb-free, corrosion resistant, readily solderable | — |
| Molding Compound | UL 94V-0 flammability rated | — |
| Package Outline Standard | JEDEC TO-220AB | — |
| RoHS-Status | Compliant (Pb-free device) | [DATA_NEEDED: RoHS compliance statement] |
| Device Type | — | Dual Schottky Barrier Rectifier (center-tap, common cathode) |
| Maximum Repetitive Reverse Voltage (VRRM) | — | 20 V |
| Maximum Average Forward Current (IF(AV)) | — | 20 A |
| Forward Current per Leg | — | 10 A (dual configuration, datasheet family 20 A total rating) |
| Reverse Voltage Family Range | — | 20 V to 60 V (SR2020CT through SR2060CT) |
| Peak Non-Repetitive Surge Current (IFSM) | — | [DATA_NEEDED: IFSM] |
| Reverse Recovery Time (trr) | — | Negligible (majority carrier Schottky conduction) |
| Flammability Classification | — | UL 94V-0 |
| Betriebstemperatur | — | [DATA_NEEDED: Operating Junction Temperature Range] |
| Configuration | — | Common cathode dual diode |
| Typical Applications | — | Low-voltage high-frequency inverters, SMPS output rectification |