MC9S12DG128CPVE vs MC9S12DG128CPV مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MC9S12DG128CPVE بواسطة NXP Semiconductors و MC9S12DG128CPV بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | MC9S12DG128CPVE | MC9S12DG128CPV |
|---|---|---|
| العلامة التجارية | NXP Semiconductors | NXP Semiconductors |
| الفئة | Microcontrollers | Microcontrollers |
| حالة دورة الحياة | NRND | نشط |
| Product Type | 16-bit HCS12 microcontroller | — |
| Core Frequency | 25 MHz | — |
| Program Memory | 128 KB flash | — |
| RAM | 8 KB | — |
| EEPROM | 2 KB | 2 KB |
| Architecture | HCS12, CISC | — |
| جهد التغذية | 2.35 V to 5.25 V | — |
| ADC | Two 8-channel, 10-bit ADCs; 16 channels total | — |
| Serial Communications | Two asynchronous serial communications interfaces | — |
| Timer | 8-channel IC/OC enhanced capture timer | Enhanced Capture Timer (ECT), 8 channels |
| PWM | 8-channel pulse-width modulator | — |
| Digital I/O | 20 discrete digital I/O lines | — |
| درجة حرارة التشغيل | -40°C to +85°C | -40 C to +125 C (automotive) |
| العلبة | 112-LQFP, 20 mm x 20 mm | — |
| Oscillator | Internal oscillator | — |
| Automotive Qualification | AEC-Q100 listed in verified distributor result | — |
| RoHS | [DATA_NEEDED: RoHS status] | — |
| REACH | [DATA_NEEDED: REACH status] | — |
| Lead-Free Status | [DATA_NEEDED: lead-free status] | — |
| Core Architecture | — | HCS12 (16-bit CISC) |
| Maximum CPU Clock | — | 25 MHz |
| Program Memory (Flash) | — | 128 KB (128K x 8) |
| Data Memory (RAM) | — | 8 KB |
| Number of I/O Pins | — | 91 |
| العلبة / الحالة | — | 112-LQFP (20 x 20 mm) |
| Analog-to-Digital Converter | — | 8-channel, 10-bit ATD |
| CAN Modules | — | Up to 3 x MSCAN (CAN 2.0A/B) |
| Serial Interfaces | — | 2 x SCI (UART), 1 x SPI, 1 x I2C |
| Operating Voltage | — | 4.5 V to 5.5 V (single 5V supply) |
| نوع التركيب | — | Surface Mount |
| مستوى MSL | — | 3 (168 hours) |
| Debug Interface | — | Background Debug Mode (BDM) |
| حالة RoHS | — | [DATA_NEEDED: RoHS status from manufacturer] |
| Flash Endurance | — | 100,000 write/erase cycles (typical) |