MC9S12DG128CPVE vs MC9S12DG128CPV Perbandingan
Perbandingan bersamaan detil MC9S12DG128CPVE dari NXP Semiconductors dan MC9S12DG128CPV dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MC9S12DG128CPVE | MC9S12DG128CPV |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Microcontrollers | Microcontrollers |
| Status Lingkungan Hidup | NRND | Aktif |
| Product Type | 16-bit HCS12 microcontroller | — |
| Core Frequency | 25 MHz | — |
| Program Memory | 128 KB flash | — |
| RAM | 8 KB | — |
| EEPROM | 2 KB | 2 KB |
| Architecture | HCS12, CISC | — |
| Tegangan Pemuat | 2.35 V to 5.25 V | — |
| ADC | Two 8-channel, 10-bit ADCs; 16 channels total | — |
| Serial Communications | Two asynchronous serial communications interfaces | — |
| Timer | 8-channel IC/OC enhanced capture timer | Enhanced Capture Timer (ECT), 8 channels |
| PWM | 8-channel pulse-width modulator | — |
| Digital I/O | 20 discrete digital I/O lines | — |
| Suhu Kerja | -40°C to +85°C | -40 C to +125 C (automotive) |
| Paket | 112-LQFP, 20 mm x 20 mm | — |
| Oscillator | Internal oscillator | — |
| Automotive Qualification | AEC-Q100 listed in verified distributor result | — |
| RoHS | [DATA_NEEDED: RoHS status] | — |
| REACH | [DATA_NEEDED: REACH status] | — |
| Lead-Free Status | [DATA_NEEDED: lead-free status] | — |
| Core Architecture | — | HCS12 (16-bit CISC) |
| Maximum CPU Clock | — | 25 MHz |
| Program Memory (Flash) | — | 128 KB (128K x 8) |
| Data Memory (RAM) | — | 8 KB |
| Number of I/O Pins | — | 91 |
| Paket / Case | — | 112-LQFP (20 x 20 mm) |
| Analog-to-Digital Converter | — | 8-channel, 10-bit ATD |
| CAN Modules | — | Up to 3 x MSCAN (CAN 2.0A/B) |
| Serial Interfaces | — | 2 x SCI (UART), 1 x SPI, 1 x I2C |
| Operating Voltage | — | 4.5 V to 5.5 V (single 5V supply) |
| Tipe Mounting | — | Surface Mount |
| Level MSL | — | 3 (168 hours) |
| Debug Interface | — | Background Debug Mode (BDM) |
| Status RoHS | — | [DATA_NEEDED: RoHS status from manufacturer] |
| Flash Endurance | — | 100,000 write/erase cycles (typical) |