MPX2010GP vs MPX2010D مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MPX2010GP بواسطة STMicroelectronics و MPX2010D بواسطة STMicroelectronics. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
STMicroelectronics
MPX2010GP - 10 kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPX2010GP ✓ نشطSTMicroelectronics
MPX2010D - 10kPa Differential Pressure Sensor | STMicroelectronics
MPX2010D ✓ نشطمقارنة المواصفات
| المعامل | MPX2010GP | MPX2010D |
|---|---|---|
| العلامة التجارية | STMicroelectronics | STMicroelectronics |
| الفئة | Pressure Sensors | Pressure Sensors |
| حالة دورة الحياة | نشط | نشط |
| Pressure Type | Vented Gauge | Differential (Port 1 vs Port 2) |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Sensitivity (Full-Scale Span) | 25 mV typical at 10 V excitation | — |
| نطاق جهد الخرج | 0 mV to 25 mV (10 V supply) | — |
| Offset (Zero Pressure) | 0 mV nominal | — |
| Supply Voltage (Excitation) | 10 V DC typical (max per datasheet) | — |
| تيار التغذية | 6 mA DC typical | — |
| Response Time | 1 ms typical | — |
| Linearity | [DATA_NEEDED: linearity %FS] | 0.1% of full-scale (typical) |
| Temperature Compensation | On-chip, calibrated | — |
| نطاق درجة حرارة التشغيل | -40 C to +125 C | 0 C to +85 C |
| Storage Temperature Range | -40 C to +125 C | [DATA_NEEDED: storage temperature range] |
| Port Style | Male, 0.19 inch (4.93 mm) tube, vented gauge | — |
| العلبة / الحالة | 4-SIP Module (Case 344B-01) | 4-SIP Module (Case 344-15) |
| نوع التركيب | Through-Hole (SIP) | Through-Hole |
| Media Compatibility | Dry gases (silicone gel isolation) | — |
| حالة RoHS | Compliant | [DATA_NEEDED: RoHS status from ST datasheet] |
| Maximum Overpressure | — | [DATA_NEEDED: maximum overpressure rating] |
| نوع الخرج | — | Analog Wheatstone Bridge (mV) |
| Output Voltage Span | — | 0 mV to 25 mV at 10V excitation |
| Sensitivity | — | 2.5 mV/kPa (nominal, at 10V excitation) |
| Excitation Voltage | — | 10 V (typical), 16 V (maximum) |
| عدد الدبابيس | — | 4 |
| On-Chip Temperature Compensation | — | Yes (laser trimmed) |
| Bridge Configuration | — | 4-arm piezoresistive Wheatstone |
| Sensor Family | — | MPX2010 / MPXV2010G / MPXM2010 |
| Diaphragm Type | — | Single monolithic silicon |