MPX2100GP vs MPX2100DP مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MPX2100GP بواسطة NXP Semiconductors و MPX2100DP بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | MPX2100GP | MPX2100DP |
|---|---|---|
| العلامة التجارية | NXP Semiconductors | NXP Semiconductors |
| الفئة | Pressure Sensors | Pressure Sensors |
| حالة دورة الحياة | نشط | نشط |
| Pressure Type | Vented Gauge | Differential |
| Operating Pressure Range | 0 to 14.5 psi (0 to 100 kPa) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Maximum Overpressure | 58.02 psi (400 kPa) | — |
| نوع الخرج | Wheatstone Bridge (analog voltage, ratiometric) | Analog mV (Wheatstone Bridge) |
| Full-Scale Span | 40 mV typical at 10 V supply | — |
| Offset | 0 mV minimum at 0 kPa | — |
| جهد التغذية | 10 V typical (ratiometric) | 10 V DC typical |
| Maximum Operating Current | 6 mA | — |
| Port Size | Male 0.19 in (4.93 mm) barbed tube | — |
| Port Style | Barbed | — |
| العلبة | 4-SIP Module (Unibody through-hole) | — |
| نوع التركيب | Through-Hole | Through-Hole |
| Temperature Compensation | On-chip, calibrated | — |
| درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | 0C to +85C (compensated) |
| Technology | Silicon piezoresistive, MEMS | Silicon piezoresistive, on-chip temperature compensation |
| Termination Style | PCB (SIP pins) | — |
| حالة RoHS | unknown | Compliant |
| Maximum Overload Pressure | — | [DATA_NEEDED: maximum overload pressure] |
| Full-Scale Span (Typical) | — | 40 mV (at 10 V excitation) |
| Zero Pressure Offset | — | [DATA_NEEDED: zero pressure offset] |
| Linearity | — | 1% typical |
| تيار التغذية | — | [DATA_NEEDED: supply current] |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Port Configuration | — | Dual port, axial tube, 4.93 mm (0.19 in) |
| العلبة / الحالة | — | 4-SIP Module (Case 344C-01) |
| مستوى MSL | — | [DATA_NEEDED: MSL rating] |