MPXM2102GS vs MPXM2202GST1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MPXM2102GS بواسطة NXP Semiconductors و MPXM2202GST1 بواسطة STMicroelectronics. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
STMicroelectronics
MPXM2202GST1 - 200kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPXM2202GST1 ✓ نشطمقارنة المواصفات
| المعامل | MPXM2102GS | MPXM2202GST1 |
|---|---|---|
| العلامة التجارية | NXP Semiconductors | STMicroelectronics |
| الفئة | Pressure Sensors | Pressure Sensors |
| حالة دورة الحياة | Obsolete | نشط |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 100 kPa (0 to 14.5 PSI) | 0 kPa to 200 kPa (0 psi to 29.01 psi) |
| جهد الخرج | 0 mV to 40 mV at 10 V excitation | — |
| جهد التغذية | 10 V typical (max 16 V) | 10 V typical (sensor excitation) |
| Sensitivity | 0.4 mV/kPa nominal | — |
| Pressure Port | Top-mounted tube (0.12" / 2.97 mm) | — |
| Port Configuration | Single port, vented gauge | — |
| Package Type | 5-SMD Module, M-PAC (MPAK-4) | — |
| درجة حرارة التشغيل | -40 C to +125 C | 0 °C to +85 °C (compensated range) |
| Technology | Piezoresistive silicon strain gauge | Piezoresistive silicon MEMS, single-element |
| Temperature Compensation | On-chip (laser-trimmed) | On-chip, 0 °C to +85 °C |
| Linearity | [DATA_NEEDED: linearity %FS] | ±0.25% (P2 grade) |
| نوع التركيب | Surface Mount | Surface Mount (SMD Gull-Wing leads) |
| Diaphragm | Single monolithic silicon | — |
| Series | MPX2102 | — |
| حالة RoHS | unknown | Compliant |
| Maximum Overpressure | — | [DATA_NEEDED: maximum overpressure rating] |
| نوع الخرج | — | Analog Wheatstone bridge (millivolt differential) |
| Full-Scale Span | — | 0 mV to 40 mV at 10 V excitation |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Port Type | — | Male barbed tube, top-side, 0.12" (2.97 mm) |
| العلبة | — | 5-SMD M-PAK module, top port |
| Bridge Resistance | — | [DATA_NEEDED: input/output bridge resistance] |