MPXV4006GC7U vs MPVZ5010G7U مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MPXV4006GC7U بواسطة STMicroelectronics و MPVZ5010G7U بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
STMicroelectronics
MPXV4006GC7U - 6kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPXV4006GC7U ✓ نشطمقارنة المواصفات
| المعامل | MPXV4006GC7U | MPVZ5010G7U |
|---|---|---|
| العلامة التجارية | STMicroelectronics | NXP Semiconductors |
| الفئة | Pressure Sensors | Pressure Sensors |
| حالة دورة الحياة | نشط | نشط |
| Operating Pressure Range | 0 kPa to 6 kPa | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Pressure Type | Vented Gauge (differential referenced to atmosphere) | Vented Gauge |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | — |
| Output Voltage Span | 0.2 V to 4.7 V (typ) | — |
| نوع الخرج | Analog ratiometric | Analog, ratiometric to Vcc |
| جهد التغذية | 5 V (typ) | — |
| تيار التغذية | [DATA_NEEDED: quiescent current] | 10 mA (maximum) |
| Accuracy (0-85 C) | ±1.5 %VFSS (typical) | — |
| نطاق درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | 0 °C to +85 °C |
| Response Time | 1 ms (typical) | [DATA_NEEDED: response time ms] |
| Port Style | Top-side 3.17 mm (0.13 in) tube inlet | — |
| Output Impedance | [DATA_NEEDED: output impedance] | — |
| العلبة | 8-DIP (0.550 in / 13.97 mm), top port | 8-DIP Module (Case 1368-01, through-hole) |
| Pressure Media Compatibility | Dry air, non-corrosive gases | — |
| نوع التركيب | Through-hole (DIP) | Through-Hole (DIP module with vent tube) |
| حالة RoHS | Compliant (per DigiKey part detail) | [DATA_NEEDED: RoHS status] |
| Lead Free | Yes (per NXP/ST product descriptions) | — |
| مستوى MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Supply Voltage (Vcc) | — | 4.75 V to 5.25 V (5 V typical) |
| Analog Output Range | — | 0.2 V to 4.7 V |
| Accuracy | — | ±1.5 %FS (0 °C to 85 °C) |
| Compensated Temperature Range | — | -10 °C to +60 °C |
| Storage Temperature Range | — | -30 °C to +100 °C [DATA_NEEDED: confirm exact storage spec] |
| Sensor Technology | — | Piezoresistive silicon micromachined |
| Signal Conditioning | — | On-chip, temperature compensated, calibrated |
| Body Height | — | 5.46 mm |