RTAX2000D-1CQ352E vs RTAX4000D-1CQ352B مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ RTAX2000D-1CQ352E بواسطة Microchip Technology و RTAX4000D-1CQ352B بواسطة Microchip Technology. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Microchip Technology
RTAX2000D-1CQ352E - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip
RTAX2000D-1CQ352E ✓ نشطMicrochip Technology
RTAX4000D-1CQ352B - 4M-Gate Rad-Tolerant FPGA 1.5V | Microchip
RTAX4000D-1CQ352B ✓ نشطمقارنة المواصفات
| المعامل | RTAX2000D-1CQ352E | RTAX4000D-1CQ352B |
|---|---|---|
| العلامة التجارية | Microchip Technology | Microchip Technology |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | نشط | نشط |
| Equivalent System Gates | 2000000 gates | 4000000 gates |
| Logic Organization | 19712 CLBs | — |
| Technology | Digital CMOS FPGA, antifuse (nonvolatile) | CMOS, Digital |
| العلبة | CQFP352 (352-terminal Ceramic Quad Flat Pack) | 352-pin Ceramic CQFP (CQ352) |
| نطاق درجة حرارة التشغيل | -55C to +125C | — |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | RTAX-DSP Radiation-Tolerant FPGA |
| Total Ionizing Dose (Functional) | 300 krad | — |
| Total Ionizing Dose (Rated) | 200 krad | — |
| DSP Mathblocks | Up to 120 | — |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | — |
| Programmability | One-time programmable (antifuse) | — |
| جهد التغذية | [DATA_NEEDED: core/supply voltage] | — |
| User I/O Terminals | [DATA_NEEDED: user I/O count for CQ352] | — |
| Max System Frequency | [DATA_NEEDED: max system frequency] | — |
| Radiation Environment Target | Space-based applications | — |
| Commercial Prototype Equivalent | Axcelerator family device | — |
| Logic Cells | — | 55440 cells |
| Configurable Logic Blocks (CLBs) | — | 36960 CLBs |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Combinatorial CLB Delay (Max) | — | 0.99 ns |
| Process Technology | — | 0.15 um CMOS |
| Programmability Type | — | Antifuse (OTP), live at power-up |
| Speed Grade | — | -1 |
| نوع التركيب | — | Surface Mount |
| Radiation Tolerance | — | Radiation-tolerant (space flight) |
| Embedded SRAM | — | Yes (with built-in FIFO control logic) |
| Operating Temperature Bin | — | B |
| حالة RoHS | — | unknown |