RTAX2000D-CQ352B vs RTAX2000DL-CQ352B مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ RTAX2000D-CQ352B بواسطة Microsemi و RTAX2000DL-CQ352B بواسطة Microchip Technology. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Microchip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ نشطمقارنة المواصفات
| المعامل | RTAX2000D-CQ352B | RTAX2000DL-CQ352B |
|---|---|---|
| العلامة التجارية | Microsemi | Microchip Technology |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | نشط | نشط |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | — |
| Equivalent System Gates | 2000000 | 2,000,000 |
| Logic Cells | 29568 | [DATA_NEEDED: Logic Cells] |
| CLBs | 19712 | 19,712 |
| Core Supply Voltage | 1.5 V nominal (1.425 V to 1.575 V) | — |
| Process Technology | CMOS antifuse | — |
| Configuration Type | One-time programmable antifuse, live at power-up | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC protection |
| Clocking Features | Segmentable clocks, chip-wide highway routing | — |
| Arithmetic Support | Carry logic | — |
| العلبة | CQFP-352 ceramic quad flat pack | 352-terminal ceramic CQFP, metal-sealed |
| Screening / Speed Grade | B (burn-in screening); D suffix = tighter ICCA limits at 125C final test | — |
| نوع التركيب | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | Space flight systems |
| Radiation Tolerance | Radiation-tolerant (TID/SEE per family datasheet) | — |
| حالة RoHS | [DATA_NEEDED: RoHS Status] | — |
| درجة حرارة التشغيل | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: Operating Temperature Range] |
| I/O Supply Voltage | [DATA_NEEDED: I/O Bank Supply Voltage] | — |
| Maximum User I/O | [DATA_NEEDED: Maximum User I/O Count] | — |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Programming Technology | — | Nonvolatile antifuse |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parameter) | — | 200 krad (Si) |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Terminal Pitch | — | 0.500 mm |
| Configuration | — | Live at power-up, no external boot PROM required |