RTAX2000D-CQ352B vs RTAX2000DL-CQ352B Vergleich

Detaillierter Direktvergleich von RTAX2000D-CQ352B von Microsemi und RTAX2000DL-CQ352B von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
RTAX2000DL-CQ352B RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-CQ352B ✓ Aktiv

Spezifikationsvergleich

Parameter RTAX2000D-CQ352B RTAX2000DL-CQ352B
Marke Microsemi Microchip Technology
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3.100,00 $0,00
Family RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs —
Equivalent System Gates 2000000 2,000,000
Logic Cells 29568 [DATA_NEEDED: Logic Cells]
CLBs 19712 19,712
Core Supply Voltage 1.5 V nominal (1.425 V to 1.575 V) —
Process Technology CMOS antifuse —
Configuration Type One-time programmable antifuse, live at power-up —
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits with optional EDAC protection
Clocking Features Segmentable clocks, chip-wide highway routing —
Arithmetic Support Carry logic —
Gehäuse CQFP-352 ceramic quad flat pack 352-terminal ceramic CQFP, metal-sealed
Screening / Speed Grade B (burn-in screening); D suffix = tighter ICCA limits at 125C final test —
Montageart Surface Mount Surface Mount
Application Domain Space-flight systems Space flight systems
Radiation Tolerance Radiation-tolerant (TID/SEE per family datasheet) —
RoHS-Status [DATA_NEEDED: RoHS Status] —
Betriebstemperatur [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: Operating Temperature Range]
I/O Supply Voltage [DATA_NEEDED: I/O Bank Supply Voltage] —
Maximum User I/O [DATA_NEEDED: Maximum User I/O Count] —
DSP Mathblocks — Up to 120
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Programming Technology — Nonvolatile antifuse
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose (Parameter) — 200 krad (Si)
Core Supply Voltage (Nominal) — 1.5 V
Core Supply Voltage Range — 1.425 V to 1.575 V
Terminal Pitch — 0.500 mm
Configuration — Live at power-up, no external boot PROM required

Datenblätter & Ressourcen

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