RTAX2000SL-1CQ256V vs RTAX2000S-1CQ256PROTO مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ RTAX2000SL-1CQ256V بواسطة Microchip Technology و RTAX2000S-1CQ256PROTO بواسطة Microchip Technology. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Microchip Technology
RTAX2000SL-1CQ256V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-1CQ256V ✓ نشطMicrochip Technology
RTAX2000S-1CQ256PROTO - 2M-Gate Rad-Tolerant FPGA Proto | Microchip
RTAX2000S-1CQ256PROTO ✓ نشطمقارنة المواصفات
| المعامل | RTAX2000SL-1CQ256V | RTAX2000S-1CQ256PROTO |
|---|---|---|
| العلامة التجارية | Microchip Technology | Microchip Technology |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | نشط | نشط |
| Equivalent System Gates | 2,000,000 (approx.) | 2000000 |
| Logic Cells | 32,256 | — |
| Configurable Logic Blocks (CLBs) | 21,504 | — |
| أقصى تردد للساعة | 649 MHz | — |
| Technology | CMOS, antifuse (one-time programmable) | Antifuse (nonvolatile, OTP), CMOS |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | — |
| Speed Grade | -1 | — |
| العلبة | 256-pin Ceramic CQFP (CQ256) | CQ256 ceramic quad package, 256 pins |
| Radiation Tolerance | Radiation-tolerant (TID/SEE characterized) | — |
| Configuration | Live-at-power-up, single-chip (no external config device) | Live at power-up, no external boot device |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | up to 540 kbits with optional EDAC |
| درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range for PROTO suffix] |
| جهد التغذية | [DATA_NEEDED: core supply voltage] | [DATA_NEEDED: core and I/O supply voltage] |
| I/O Count (CQ256) | [DATA_NEEDED: user I/O count] | — |
| Total Ionizing Dose (TID) | [DATA_NEEDED: TID tolerance in krad] | — |
| نوع التركيب | Surface Mount | Surface Mount |
| مستوى MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Logic Blocks (CLBs) | — | 21504 |
| Additional ASIC Gates | — | 250000 |
| SEU Rate | — | less than 1E-10 errors per bit-day (family spec) |
| Total Ionizing Dose (Functional) | — | 300 krad |
| Total Ionizing Dose (Parametric) | — | 200 krad |
| Logic Family | — | CMOS |
| Maximum User I/Os (family) | — | up to 684 (density dependent) |
| Architecture Base | — | Axcelerator compatible fabric |
| Product Grade | — | PROTO - engineering prototyping unit |