RTAX2000SL-CGS624E vs RTAX2000S-1LG624V مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ RTAX2000SL-CGS624E بواسطة Microchip Technology و RTAX2000S-1LG624V بواسطة Microchip Technology. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Microchip Technology
RTAX2000SL-CGS624E - 2M-Gate Rad-Tolerant FPGA CGA-624 | Microchip
RTAX2000SL-CGS624E ✓ نشطMicrochip Technology
RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip
RTAX2000S-1LG624V ✓ نشطمقارنة المواصفات
| المعامل | RTAX2000SL-CGS624E | RTAX2000S-1LG624V |
|---|---|---|
| العلامة التجارية | Microchip Technology | Microchip Technology |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | نشط | نشط |
| Logic Elements / CLBs | 21504 CLBs | — |
| Equivalent System Gates | 2000000 gates | 2,000,000 gates |
| Additional ASIC Gates | 250000 gates | — |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | — |
| Technology | CMOS, anti-fuse OTP | — |
| Radiation Tolerance | Radiation-tolerant (space-flight grade) | — |
| العلبة | CBGA624 / CGA-624 ceramic column grid array | CG624, 624-pin ceramic column grid array |
| نوع التركيب | Surface Mount | Surface Mount |
| Configuration | Live at power-up, one-time programmable | Single-chip, live at power-up (no boot device required) |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits SRAM with optional EDAC protection |
| Clocking | Segmentable clocks, chip-wide highway routing | — |
| Arithmetic Support | Carry logic | — |
| درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | — |
| جهد التغذية | [DATA_NEEDED: core supply voltage] | — |
| Maximum I/O | [DATA_NEEDED: maximum user I/O count for CG624 package] | — |
| حالة RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Qualification | [DATA_NEEDED: QML qualification level] | — |
| Configurable Logic Blocks (CLBs) | — | 21,504 |
| User I/Os (maximum, family) | — | Up to 684 |
| Total Ionizing Dose (TID), functional | — | 300 krad (Si) |
| Total Ionizing Dose (TID), parametric | — | 200 krad (Si) |
| SEU Immunity | — | Less than 1E-10 errors per bit-day |
| Programming Technology | — | One-time programmable antifuse, nonvolatile |
| Process Technology | — | Digital CMOS |
| Speed Grade | — | -1 |
| Package Temperature Suffix | — | V (space/military screening variant) |
| Family Lineage | — | RTAX-S/SL, based on commercial Axcelerator family |
| نطاق درجة حرارة التشغيل | — | [DATA_NEEDED: operating temperature range] |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |