UCC21550ADWR vs UCC21550 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ UCC21550ADWR بواسطة Texas Instruments و UCC21550 بواسطة Texas Instruments. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Texas Instruments
UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments
UCC21550ADWR ✓ نشطمقارنة المواصفات
| المعامل | UCC21550ADWR | UCC21550 |
|---|---|---|
| العلامة التجارية | Texas Instruments | Texas Instruments |
| الفئة | Power MOSFET Drivers | Power MOSFET Drivers |
| حالة دورة الحياة | نشط | نشط |
| Number of Channels | 2 (dual) | — |
| Configuration | Dual low-side, dual high-side, or half-bridge | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Reinforced, capacitive coupling | — |
| Isolation Voltage | 5000 Vrms | — |
| CMTI | > 125 V/ns | [DATA_NEEDED: common-mode transient immunity] |
| Max VDD Output Supply | 25 V | — |
| UVLO Threshold Option | 5 V | — |
| Dead Time | Programmable | Programmable via DT pin resistor |
| Disable Function | Yes (DISABLE pin) | — |
| Driven Devices | Power MOSFET, SiC, GaN, IGBT | — |
| Junction Temperature Range | -40C to +150C | — |
| العلبة | 16-SOIC (DW) | 16-SOIC (DW, 300 mil) |
| نوع التركيب | Surface Mount | Surface Mount |
| حالة RoHS | Compliant | Compliant |
| القنوات | — | 2 (dual-channel) |
| Isolation Rating | — | 5000 Vrms (reinforced, UL1577) |
| Isolation Technology | — | Capacitive (silicon dioxide) |
| Configurations | — | Dual low-side, dual high-side, or half-bridge |
| Supported Transistors | — | MOSFET, SiC, GaN, IGBT |
| UVLO | — | Yes, on input and output supplies (A/B/C grade options) |
| درجة حرارة التشغيل | — | -40C to +150C |
| Automotive Qualification | — | UCC21550x-Q1 family AEC-Q100 qualified |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay] |