UCC21550ADWR vs UCC21550 比較

詳細並排比較 UCC21550ADWR 由 Texas Instruments 與 UCC21550 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
UCC21550ADWR UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments

UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments

UCC21550ADWR ✓ 啟用中
Texas Instruments
UCC21550 UCC21550 - 4A/6A 5kVrms Isolated Dual Gate Driver | TI

UCC21550 - 4A/6A 5kVrms Isolated Dual Gate Driver | TI

UCC21550 ✓ 啟用中

規格比較

參數 UCC21550ADWR UCC21550
品牌 Texas Instruments Texas Instruments
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Number of Channels 2 (dual) —
Configuration Dual low-side, dual high-side, or half-bridge —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Reinforced, capacitive coupling —
Isolation Voltage 5000 Vrms —
CMTI > 125 V/ns [DATA_NEEDED: common-mode transient immunity]
Max VDD Output Supply 25 V —
UVLO Threshold Option 5 V —
Dead Time Programmable Programmable via DT pin resistor
Disable Function Yes (DISABLE pin) —
Driven Devices Power MOSFET, SiC, GaN, IGBT —
Junction Temperature Range -40C to +150C —
封裝 16-SOIC (DW) 16-SOIC (DW, 300 mil)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
通道數 — 2 (dual-channel)
Isolation Rating — 5000 Vrms (reinforced, UL1577)
Isolation Technology — Capacitive (silicon dioxide)
Configurations — Dual low-side, dual high-side, or half-bridge
Supported Transistors — MOSFET, SiC, GaN, IGBT
UVLO — Yes, on input and output supplies (A/B/C grade options)
工作溫度 — -40C to +150C
Automotive Qualification — UCC21550x-Q1 family AEC-Q100 qualified
Propagation Delay — [DATA_NEEDED: typical propagation delay]

資料表與資源

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