UCC5310MCDR vs UCC5320 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ UCC5310MCDR بواسطة Texas Instruments و UCC5320 بواسطة Texas Instruments. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Texas Instruments
UCC5310MCDR - 4.3A Isolated Gate Driver, 3kVrms, SOIC-8 | Texas Instruments
UCC5310MCDR ✓ نشطمقارنة المواصفات
| المعامل | UCC5310MCDR | UCC5320 |
|---|---|---|
| العلامة التجارية | Texas Instruments | Texas Instruments |
| الفئة | Power MOSFET Drivers | Power MOSFET Drivers |
| حالة دورة الحياة | نشط | نشط |
| Number of Channels | 1 | 1 |
| Peak Source Current | 4.3 A | 4.3 A |
| Peak Sink Current | 2.2 A | 4.5 A |
| Isolation Voltage (rms) | 3 kVrms | — |
| Input VCC Range | 3 V to 15 V | — |
| Driver VDD Range | Up to 30 V | — |
| UVLO Threshold | 12 V (with respect to IGBT emitter, M-variant) | — |
| Miller Clamp | Integrated | — |
| Propagation Delay | [DATA_NEEDED: typical propagation delay] | [DATA_NEEDED: propagation delay ns] |
| Common-Mode Transient Immunity | [DATA_NEEDED: CMTI value] | — |
| درجة حرارة التشغيل | -40C to +125C | — |
| العلبة | SOIC-8 (D) | — |
| Pins | 8 | — |
| نوع التركيب | Surface Mount | Surface Mount |
| مستوى MSL | [DATA_NEEDED: MSL rating] | — |
| حالة RoHS | Compliant | Compliant |
| Isolation Voltage (D package) | — | 3000 Vrms (basic) |
| Isolation Voltage (DWV package) | — | 5000 Vrms (reinforced) |
| Primary Supply Voltage (VDD1) | — | 3 V to 5.5 V |
| Secondary Supply Voltage (VDD2) | — | 9.5 V to 33 V |
| تكوين الخرج | — | Split output (UCC5320S) or single (UCC5320E) |
| UVLO Reference | — | VDD2 referenced (E variant) or GND2 referenced (EC variant) |
| Common-Mode Transient Immunity (CMTI) | — | >= 100 kV/us |
| نطاق درجة حرارة التشغيل | — | -40C to +125C (junction to +150C) |
| Package Options | — | 8-pin SOIC (D) or 8-pin wide-body SOIC (DWV) |
| Supported Switch Types | — | MOSFET, IGBT, SiC MOSFET, GaN FET |