IR21084STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
MPN: IR21084STRPBF ✓ نشطIR21084STRPBF نظرة عامة
A gate driver IC is a high-voltage level shifter and buffer that translates low-voltage PWM control signals from a microcontroller or analog controller into the high-current, high-voltage drive signals required to switch the gate of a power MOSFET or IGBT. Within the broader hierarchy, a half-bridge gate driver sits between low-voltage PWM controllers and high-power discrete switches in the power management signal chain: gate driver -> level shifter -> power switch -> power stage -> power conversion system. Floating high-side channels allow bootstrap operation, eliminating the need for an isolated supply for the high-side switch.
Key features include a floating channel designed for bootstrap operation, fully operational +600V rating, tolerance to negative transient voltages, dV/dt immunity, undervoltage lockout (UVLO) for both high-side and low-side channels, and 3.3V, 5V, and 15V logic input compatibility. The 14-lead SOIC package offers a compact footprint with a standard 3.90mm body width for surface-mount assembly.
The IR21084STRPBF uses a high-voltage level-shifting architecture with proprietary latch-immune CMOS logic to reject the high dV/dt transients present on the switching node of a half-bridge. The high-side channel is implemented with a floating well structure rated to 600V, and the low-side channel provides a non-inverting input path directly from VCC. The input stage accepts logic-level signals, eliminating the need for a level translator in 3.3V microcontroller designs.
Typical applications include motor drive inverters, switch-mode power supplies (SMPS), half-bridge and full-bridge converters, lighting ballasts, and industrial driver boards. Its 600V rating suits universal-input AC/DC converters and 400V/480V industrial bus systems.
When designing with the IR21084STRPBF, ensure the bootstrap capacitor and diode are correctly sized for the switching frequency and high-side on-time. Place bypass capacitors as close as possible to VCC and VB pins to suppress supply transients. The deadtime (DT) pin setting determines the interlock delay between high-side and low-side switches to prevent shoot-through.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, including cross-brand equivalents and comparison tables for engineers selecting between the IR21084 family and competing gate drivers.
بدائل مباشرة لـ IR21084STRPBF — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
IR21084SPBF
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
IR2108SPBF
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
IR2108STRPBF
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
IR21084STRPBF الحدود القصوى والخصائص الكهربائية
| Configuration | Half-Bridge |
| Channel Type | Synchronous (High-side + Low-side) |
| Input Type | Non-Inverting |
| Number of Drivers | 2 (high-side + low-side) |
| Supply Voltage (VCC/VB) | 10 V to 20 V |
| High-Side Offset Voltage (VB) | Up to +600 V |
| Peak Source Current (IO+) | 200 mA |
| Peak Sink Current (IO-) | 350 mA |
| Logic Input Compatibility | 3.3 V, 5 V, 15 V |
| Propagation Delay (typ) | 220 ns |
| Rise Time (typ) | 100 ns |
| Fall Time (typ) | 50 ns |
| Undervoltage Lockout | Yes (both channels) |
| Negative Transient Tolerance | Yes (dV/dt immune) |
| درجة حرارة التشغيل | -40C to +125C |
| العلبة / الحالة | 14-SOIC (3.90 mm width) |
| نوع التركيب | Surface Mount |
| حالة RoHS | Compliant (PBF suffix) |
| Lead-Free | Yes (PBF suffix) |
تكوين أطراف IR21084STRPBF
| دبوس 1 | VCC — Logic and low-side gate drive supply (10V to 20V) |
| دبوس 2 | IN — Logic input for both high-side and low-side (non-inverting, 3.3V/5V/15V compatible) |
| دبوس 3 | DT — Programmable deadtime control input |
| دبوس 4 | SD — Shutdown input (active low, disables both outputs) |
| دبوس 5 | COM — Low-side gate drive return / ground |
| دبوس 6 | LO — Low-side gate drive output |
| دبوس 7 | VS — High-side floating supply return (switching node) |
| دبوس 8 | NC — Not connected (per datasheet) |
| دبوس 9 | VB — High-side floating supply (bootstrap) |
| دبوس 10 | HO — High-side gate drive output |
| دبوس 11 | NC — Not connected (per datasheet) |
| دبوس 12 | NC — Not connected (per datasheet) |
| دبوس 13 | NC — Not connected (per datasheet) |
| دبوس 14 | NC — Not connected (per datasheet) |
التطبيقات النموذجية
IR21084STRPBF مناسب لـ 7 التطبيقs: Switch-Mode Power Supply (SMPS) Half-Bridge, Industrial Motor Drive Inverter, PFC Boost Front-End Converter, Electronic Ballast and LED Driver, Solar Inverter Auxiliary Half-Bridge, Class D Audio Amplifier Half-Bridge, Uninterruptible Power Supply (UPS) Half-Bridge.
Switch-Mode Power Supply (SMPS) Half-Bridge
The IR21084STRPBF's 600V high-side rating and 200mA/350mA gate drive current make it a strong fit for half-bridge SMPS stages in offline AC/DC converters up to 480V bus. With 220ns propagation delay, the device supports PWM frequencies up to 50 kHz for typical LLC and phase-shifted full-bridge (PSFB) topologies. Placed between the PWM controller and the primary-side MOSFETs or IGBTs with a bootstrap diode and capacitor on VB, the IR21084 replaces discrete drive transformers with a single IC, reducing PCB area. Its 3.3V logic input compatibility lets it interface directly with modern digital controllers without an external level translator.
موصى به
Industrial Motor Drive Inverter
For three-phase motor drive inverters using discrete half-bridges, three IR21084STRPBF devices drive the six IGBTs of a 400V/480V industrial motor. The 600V high-side rating covers the full industrial bus range with adequate margin for regenerative transients, and the 200mA/350mA drive current handles gates of 600V-1200V IGBTs commonly used in 1-5 kW drives. The non-inverting input pair (IN/SD) accepts 3.3V or 5V PWM from a DSP or MCU, and the shutdown (SD) pin enables fast overcurrent protection. Compared to bootstrapped half-bridge alternatives, the IR21084's UVLO on both channels prevents partial-turn-on at low VCC during startup.
موصى به
PFC Boost Front-End Converter
The IR21084STRPBF drives the boost switch and synchronous rectifier (or active bridge) in continuous-conduction-mode (CCM) PFC front-end converters for 1-3 kW telecom and server power supplies. Its 10V-20V gate drive supply covers typical SiC MOSFET and IGBT gate voltages, while the +600V high-side offset supports 400V PFC output buses with substantial transient headroom. The 220ns propagation delay is fast enough for 65-100 kHz PFC operation. Compared to self-driven PFC topologies, the IR21084's bootstrap high-side simplifies the PCB and improves reliability versus discrete-charge-pump circuits.
موصى به
Electronic Ballast and LED Driver
In half-bridge electronic ballasts for fluorescent and HID lamps, the IR21084STRPBF drives the resonant tank MOSFETs with its 600V high-side rating and 200mA/350mA gate drive current matching the typical gate charge of 600V MOSFETs used at 50-200 kHz. The 14-SOIC surface-mount package is well-suited to compact ballast designs where through-hole drivers would not fit. For higher-power LED drivers using LLC resonant stages, the IR21084's 220ns propagation delay supports up to 100 kHz switching frequencies with adequate timing margin.
موصى به
Solar Inverter Auxiliary Half-Bridge
In string inverter auxiliary power stages and DC/DC converters, the IR21084STRPBF drives the half-bridge primary side of an isolated DC/DC converter or the synchronous rectifier secondary. Its 600V rating covers 1500V DC-link auxiliary stages with 2:1 derating margin, and the 10V-20V supply range matches standard Si MOSFET gate voltages. The compact 14-SOIC footprint is ideal for high-density string inverter boards where multiple isolated converters are paralleled. Its UVLO on both channels prevents partial conduction during brown-out conditions common in solar installations.
موصى به
Class D Audio Amplifier Half-Bridge
The IR21084STRPBF drives the half-bridge output stage of a Class D audio amplifier using 600V MOSFETs in 200W+ designs. Its 200mA/350mA peak drive current handles the gate charge of high-current audio MOSFETs, and the 220ns propagation delay introduces minimal deadtime (typically <50ns) when configured for low-distortion audio. The high-side bootstrap scheme allows a single supply to drive both half-bridge switches, simplifying the amplifier power supply. Compared to gate-drive transformers, the IR21084 reduces audio distortion by eliminating transformer leakage inductance.
موصى به
Uninterruptible Power Supply (UPS) Half-Bridge
In online UPS systems, the IR21084STRPBF drives the half-bridge stages of the battery inverter and the line-interactive converter. Its 600V rating covers 220V/230V AC line voltages with 2x safety margin, and the 200mA/350mA peak drive current is suitable for typical UPS-grade IGBTs. The non-inverting input pair accepts the inverter PWM directly from a DSP controller, and the shutdown (SD) pin enables fast battery-disconnect protection during fault conditions. Compared to opto-isolated gate driver solutions, the IR21084 reduces BOM cost and PCB area in cost-sensitive UPS designs.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ IR21084STRPBF — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | IR21084SPBF | IR2108SPBF | IR2108STRPBF | IRS2110SPBF |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 14-SOIC (3.90mm) | 14-SOIC (3.90mm) - same | 14-SOIC (3.90mm) - same | 14-SOIC (3.90mm) - same | 16-SOIC - larger |
| Configuration | Half-Bridge (1 HI + 1 LO) | Half-Bridge (same) | Half-Bridge (same) | Half-Bridge (same) | Independent HI/LO inputs |
| High-Side Offset Voltage | 600 V | 600 V | 600 V | 600 V | 600 V |
| Gate Drive Supply (VCC/VB) | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Peak Source / Sink Current | 200 mA / 350 mA | 200 mA / 350 mA | 200 mA / 350 mA | 200 mA / 350 mA | 290 mA / 600 mA |
| Propagation Delay (typ) | 220 ns | 220 ns | 220 ns | 220 ns | 120 ns |
| Logic Input Compatibility | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V |
| Deadtime Control | Programmable via DT pin | Programmable via DT pin | Fixed internal deadtime | Fixed internal deadtime | Independent inputs (no DT) |
| Pin Count | 14 | 14 - same | 14 - same | 14 - same | 16 - different |
أبرز الفروقات
- Programmable deadtime (DT) pin for shoot-through protection optimization (مقابلIR2108SPBF)
- Higher peak source current (200mA) at the same 600V/14-SOIC price point (مقابلIRS2110SPBF (16-SOIC, different package))
- Lower pin count (14-SOIC) versus comparable half-bridge drivers (مقابلIR2010STRPBF (16-SOIC))
ملاحظات التصميم
The IR21084STRPBF requires a bootstrap circuit on the high-side channel: a fast-recovery diode (e.g., UF4007 or ES1J) from VCC to VB, and a bootstrap capacitor from VB to VS. Size Cbootstrap per the datasheet's Qg requirement: Cboot >= (Qg_total / delta_VB), where delta_VB is the allowable droop during the high-side on-time. For a typical 100 nC total gate charge and 50 kHz operation with 5us on-time, a 0.1uF to 1uF ceramic capacitor suffices. Place Cbootstrap as physically close as possible to pins 9 (VB) and 7 (VS) to minimize parasitic inductance that causes ringing.
Place bypass capacitors as close as possible to VCC (pin 1) and VB (pin 9): use a 0.1uF X7R ceramic in parallel with a 4.7uF-10uF electrolytic or tantalum bulk capacitor. Keep the high-side switching node trace (pin 7 VS) short and away from the logic input (pin 2 IN) to minimize capacitive coupling that can inject noise into the input. Use a ground plane on the bottom layer under the IC with a single-point connection to the COM pin (pin 5) to avoid ground bounce during the 350 mA sink transitions.
Do not exceed the maximum high-side offset voltage of +600V on VB with respect to COM. Ensure the bootstrap refresh path is closed: the low-side switch must turn on periodically to recharge Cbootstrap from VCC through the bootstrap diode. Without refresh, the high-side gate drive voltage droops below UVLO threshold and the high-side MOSFET may partially turn on, causing shoot-through. The deadtime (DT) pin must be configured with a resistor to COM or VCC per the datasheet - leaving it floating may cause undefined timing.
Estimated: at 50 kHz switching frequency with a typical 600V/20A IGBT (Qg ~ 100 nC), the gate driver dissipates approximately P_gate = Qg * Vg * f = 100nC * 15V * 50kHz = 75 mW per channel. With both channels active, total gate drive dissipation is ~150 mW, well within the 14-SOIC's ~1W thermal limit at 25C ambient. For continuous operation above 100 kHz or with multiple paralleled high-current IGBTs (Qg > 200 nC), recompute dissipation and consider thermal vias under the SOIC thermal pad area for improved cooling.
معلومات الامتثال
RoHS and REACH compliant per PBF suffix. Not AEC-Q100 qualified - for automotive gate drive applications, choose an AEC-Q100 qualified part. Halogen-free status not stated in the verified web data.
