IR21084STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
MPN: IR21084STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.72 | $1.72 |
| 10 | $1.55 | $15.50 |
| 100 | $1.32 | $132.00 |
| 500 | $1.12 | $560.00 |
| 1,000 | $0.95 | $950.00 |
| 2,500 | $0.79 | $1,975.00 |
IR21084STRPBF Overview
A gate driver IC is a high-voltage level shifter and buffer that translates low-voltage PWM control signals from a microcontroller or analog controller into the high-current, high-voltage drive signals required to switch the gate of a power MOSFET or IGBT. Within the broader hierarchy, a half-bridge gate driver sits between low-voltage PWM controllers and high-power discrete switches in the power management signal chain: gate driver -> level shifter -> power switch -> power stage -> power conversion system. Floating high-side channels allow bootstrap operation, eliminating the need for an isolated supply for the high-side switch.
Key features include a floating channel designed for bootstrap operation, fully operational +600V rating, tolerance to negative transient voltages, dV/dt immunity, undervoltage lockout (UVLO) for both high-side and low-side channels, and 3.3V, 5V, and 15V logic input compatibility. The 14-lead SOIC package offers a compact footprint with a standard 3.90mm body width for surface-mount assembly.
The IR21084STRPBF uses a high-voltage level-shifting architecture with proprietary latch-immune CMOS logic to reject the high dV/dt transients present on the switching node of a half-bridge. The high-side channel is implemented with a floating well structure rated to 600V, and the low-side channel provides a non-inverting input path directly from VCC. The input stage accepts logic-level signals, eliminating the need for a level translator in 3.3V microcontroller designs.
Typical applications include motor drive inverters, switch-mode power supplies (SMPS), half-bridge and full-bridge converters, lighting ballasts, and industrial driver boards. Its 600V rating suits universal-input AC/DC converters and 400V/480V industrial bus systems.
When designing with the IR21084STRPBF, ensure the bootstrap capacitor and diode are correctly sized for the switching frequency and high-side on-time. Place bypass capacitors as close as possible to VCC and VB pins to suppress supply transients. The deadtime (DT) pin setting determines the interlock delay between high-side and low-side switches to prevent shoot-through.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, including cross-brand equivalents and comparison tables for engineers selecting between the IR21084 family and competing gate drivers.
Drop-in alternatives for IR21084STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR21084SPBF
β Drop-Inπ Reference alternative (not in catalog)
IR2108SPBF
β Drop-Inπ Reference alternative (not in catalog)
IR2108STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IR21084STRPBF Maximum Ratings & Electrical Characteristics
| Configuration | Half-Bridge |
| Channel Type | Synchronous (High-side + Low-side) |
| Input Type | Non-Inverting |
| Number of Drivers | 2 (high-side + low-side) |
| Supply Voltage (VCC/VB) | 10 V to 20 V |
| High-Side Offset Voltage (VB) | Up to +600 V |
| Peak Source Current (IO+) | 200 mA |
| Peak Sink Current (IO-) | 350 mA |
| Logic Input Compatibility | 3.3 V, 5 V, 15 V |
| Propagation Delay (typ) | 220 ns |
| Rise Time (typ) | 100 ns |
| Fall Time (typ) | 50 ns |
| Undervoltage Lockout | Yes (both channels) |
| Negative Transient Tolerance | Yes (dV/dt immune) |
| Operating Temperature | -40C to +125C |
| Package / Case | 14-SOIC (3.90 mm width) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant (PBF suffix) |
| Lead-Free | Yes (PBF suffix) |
IR21084STRPBF Pin Configuration
| Pin 1 | VCC β Logic and low-side gate drive supply (10V to 20V) |
| Pin 2 | IN β Logic input for both high-side and low-side (non-inverting, 3.3V/5V/15V compatible) |
| Pin 3 | DT β Programmable deadtime control input |
| Pin 4 | SD β Shutdown input (active low, disables both outputs) |
| Pin 5 | COM β Low-side gate drive return / ground |
| Pin 6 | LO β Low-side gate drive output |
| Pin 7 | VS β High-side floating supply return (switching node) |
| Pin 8 | NC β Not connected (per datasheet) |
| Pin 9 | VB β High-side floating supply (bootstrap) |
| Pin 10 | HO β High-side gate drive output |
| Pin 11 | NC β Not connected (per datasheet) |
| Pin 12 | NC β Not connected (per datasheet) |
| Pin 13 | NC β Not connected (per datasheet) |
| Pin 14 | NC β Not connected (per datasheet) |
Typical Applications
IR21084STRPBF is suitable for 7 applications: Switch-Mode Power Supply (SMPS) Half-Bridge, Industrial Motor Drive Inverter, PFC Boost Front-End Converter, Electronic Ballast and LED Driver, Solar Inverter Auxiliary Half-Bridge, Class D Audio Amplifier Half-Bridge, Uninterruptible Power Supply (UPS) Half-Bridge.
Switch-Mode Power Supply (SMPS) Half-Bridge
The IR21084STRPBF's 600V high-side rating and 200mA/350mA gate drive current make it a strong fit for half-bridge SMPS stages in offline AC/DC converters up to 480V bus. With 220ns propagation delay, the device supports PWM frequencies up to 50 kHz for typical LLC and phase-shifted full-bridge (PSFB) topologies. Placed between the PWM controller and the primary-side MOSFETs or IGBTs with a bootstrap diode and capacitor on VB, the IR21084 replaces discrete drive transformers with a single IC, reducing PCB area. Its 3.3V logic input compatibility lets it interface directly with modern digital controllers without an external level translator.
Recommended
Industrial Motor Drive Inverter
For three-phase motor drive inverters using discrete half-bridges, three IR21084STRPBF devices drive the six IGBTs of a 400V/480V industrial motor. The 600V high-side rating covers the full industrial bus range with adequate margin for regenerative transients, and the 200mA/350mA drive current handles gates of 600V-1200V IGBTs commonly used in 1-5 kW drives. The non-inverting input pair (IN/SD) accepts 3.3V or 5V PWM from a DSP or MCU, and the shutdown (SD) pin enables fast overcurrent protection. Compared to bootstrapped half-bridge alternatives, the IR21084's UVLO on both channels prevents partial-turn-on at low VCC during startup.
Recommended
PFC Boost Front-End Converter
The IR21084STRPBF drives the boost switch and synchronous rectifier (or active bridge) in continuous-conduction-mode (CCM) PFC front-end converters for 1-3 kW telecom and server power supplies. Its 10V-20V gate drive supply covers typical SiC MOSFET and IGBT gate voltages, while the +600V high-side offset supports 400V PFC output buses with substantial transient headroom. The 220ns propagation delay is fast enough for 65-100 kHz PFC operation. Compared to self-driven PFC topologies, the IR21084's bootstrap high-side simplifies the PCB and improves reliability versus discrete-charge-pump circuits.
Recommended
Electronic Ballast and LED Driver
In half-bridge electronic ballasts for fluorescent and HID lamps, the IR21084STRPBF drives the resonant tank MOSFETs with its 600V high-side rating and 200mA/350mA gate drive current matching the typical gate charge of 600V MOSFETs used at 50-200 kHz. The 14-SOIC surface-mount package is well-suited to compact ballast designs where through-hole drivers would not fit. For higher-power LED drivers using LLC resonant stages, the IR21084's 220ns propagation delay supports up to 100 kHz switching frequencies with adequate timing margin.
Recommended
Solar Inverter Auxiliary Half-Bridge
In string inverter auxiliary power stages and DC/DC converters, the IR21084STRPBF drives the half-bridge primary side of an isolated DC/DC converter or the synchronous rectifier secondary. Its 600V rating covers 1500V DC-link auxiliary stages with 2:1 derating margin, and the 10V-20V supply range matches standard Si MOSFET gate voltages. The compact 14-SOIC footprint is ideal for high-density string inverter boards where multiple isolated converters are paralleled. Its UVLO on both channels prevents partial conduction during brown-out conditions common in solar installations.
Recommended
Class D Audio Amplifier Half-Bridge
The IR21084STRPBF drives the half-bridge output stage of a Class D audio amplifier using 600V MOSFETs in 200W+ designs. Its 200mA/350mA peak drive current handles the gate charge of high-current audio MOSFETs, and the 220ns propagation delay introduces minimal deadtime (typically <50ns) when configured for low-distortion audio. The high-side bootstrap scheme allows a single supply to drive both half-bridge switches, simplifying the amplifier power supply. Compared to gate-drive transformers, the IR21084 reduces audio distortion by eliminating transformer leakage inductance.
Recommended
Uninterruptible Power Supply (UPS) Half-Bridge
In online UPS systems, the IR21084STRPBF drives the half-bridge stages of the battery inverter and the line-interactive converter. Its 600V rating covers 220V/230V AC line voltages with 2x safety margin, and the 200mA/350mA peak drive current is suitable for typical UPS-grade IGBTs. The non-inverting input pair accepts the inverter PWM directly from a DSP controller, and the shutdown (SD) pin enables fast battery-disconnect protection during fault conditions. Compared to opto-isolated gate driver solutions, the IR21084 reduces BOM cost and PCB area in cost-sensitive UPS designs.
Recommended
Recommended Products Summary
Engineering reference data for IR21084STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR21084SPBF | IR2108SPBF | IR2108STRPBF | IRS2110SPBF |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 14-SOIC (3.90mm) | 14-SOIC (3.90mm) - same | 14-SOIC (3.90mm) - same | 14-SOIC (3.90mm) - same | 16-SOIC - larger |
| Configuration | Half-Bridge (1 HI + 1 LO) | Half-Bridge (same) | Half-Bridge (same) | Half-Bridge (same) | Independent HI/LO inputs |
| High-Side Offset Voltage | 600 V | 600 V | 600 V | 600 V | 600 V |
| Gate Drive Supply (VCC/VB) | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Peak Source / Sink Current | 200 mA / 350 mA | 200 mA / 350 mA | 200 mA / 350 mA | 200 mA / 350 mA | 290 mA / 600 mA |
| Propagation Delay (typ) | 220 ns | 220 ns | 220 ns | 220 ns | 120 ns |
| Logic Input Compatibility | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V |
| Deadtime Control | Programmable via DT pin | Programmable via DT pin | Fixed internal deadtime | Fixed internal deadtime | Independent inputs (no DT) |
| Pin Count | 14 | 14 - same | 14 - same | 14 - same | 16 - different |
Key Differentiators
- Programmable deadtime (DT) pin for shoot-through protection optimization (vs IR2108SPBF)
- Higher peak source current (200mA) at the same 600V/14-SOIC price point (vs IRS2110SPBF (16-SOIC, different package))
- Lower pin count (14-SOIC) versus comparable half-bridge drivers (vs IR2010STRPBF (16-SOIC))
Design Notes
The IR21084STRPBF requires a bootstrap circuit on the high-side channel: a fast-recovery diode (e.g., UF4007 or ES1J) from VCC to VB, and a bootstrap capacitor from VB to VS. Size Cbootstrap per the datasheet's Qg requirement: Cboot >= (Qg_total / delta_VB), where delta_VB is the allowable droop during the high-side on-time. For a typical 100 nC total gate charge and 50 kHz operation with 5us on-time, a 0.1uF to 1uF ceramic capacitor suffices. Place Cbootstrap as physically close as possible to pins 9 (VB) and 7 (VS) to minimize parasitic inductance that causes ringing.
Place bypass capacitors as close as possible to VCC (pin 1) and VB (pin 9): use a 0.1uF X7R ceramic in parallel with a 4.7uF-10uF electrolytic or tantalum bulk capacitor. Keep the high-side switching node trace (pin 7 VS) short and away from the logic input (pin 2 IN) to minimize capacitive coupling that can inject noise into the input. Use a ground plane on the bottom layer under the IC with a single-point connection to the COM pin (pin 5) to avoid ground bounce during the 350 mA sink transitions.
Do not exceed the maximum high-side offset voltage of +600V on VB with respect to COM. Ensure the bootstrap refresh path is closed: the low-side switch must turn on periodically to recharge Cbootstrap from VCC through the bootstrap diode. Without refresh, the high-side gate drive voltage droops below UVLO threshold and the high-side MOSFET may partially turn on, causing shoot-through. The deadtime (DT) pin must be configured with a resistor to COM or VCC per the datasheet - leaving it floating may cause undefined timing.
Estimated: at 50 kHz switching frequency with a typical 600V/20A IGBT (Qg ~ 100 nC), the gate driver dissipates approximately P_gate = Qg * Vg * f = 100nC * 15V * 50kHz = 75 mW per channel. With both channels active, total gate drive dissipation is ~150 mW, well within the 14-SOIC's ~1W thermal limit at 25C ambient. For continuous operation above 100 kHz or with multiple paralleled high-current IGBTs (Qg > 200 nC), recompute dissipation and consider thermal vias under the SOIC thermal pad area for improved cooling.
Compliance Information
RoHS and REACH compliant per PBF suffix. Not AEC-Q100 qualified - for automotive gate drive applications, choose an AEC-Q100 qualified part. Halogen-free status not stated in the verified web data.
