MRF8P20161HSR3 - 37W 1880-2025MHz RF Power MOSFET | NXP
MPN: MRF8P20161HSR3 ✓ نشطMRF8P20161HSR3 نظرة عامة
An RF power MOSFET (Radio-Frequency Metal-Oxide-Semiconductor Field-Effect Transistor) is a discrete transistor optimized for high-frequency power amplification in the megahertz-to-gigahertz range. Within the broader semiconductor taxonomy, this device sits in the hierarchy: RF MOSFET -> RF power transistor -> discrete semiconductor -> power amplifier building block. The 'lateral' N-channel architecture uses current flow parallel to the silicon surface, which is the preferred geometry for GHz-range power devices because it minimizes parasitic capacitances and enables high breakdown voltage in a compact die.
Key specifications include a 28 V drain supply, 550 mA quiescent drain current (Idq), 16.4 dB small-signal gain at 1.92 GHz, and a surface-mount ceramic package rated for the thermal demands of continuous base-station duty. The device's high gain and broadband matching network tolerance reduce the bill of materials in the RF chain by minimizing driver-stage gain requirements. Lateral MOSFET construction also provides excellent thermal stability under W-CDMA envelope modulation where peak-to-average ratios approach 10 dB.
Typical applications include W-CDMA, LTE, and multi-carrier GSM base station power amplifiers, repeaters and boosters operating in the 1880-2025 MHz bands, digital pre-distortion (DPD) feedback loops, and aerospace or defense RF transmitter subassemblies. The 28 V supply rail and 37 W average power place this part firmly in the macro-cell base station class where Doherty PA topologies and high-efficiency envelope tracking are common.
When designing with this part, designers must observe proper RF load-pull matching, adequate base-plate cooling, and 50-ohm system impedance at the package reference plane. The ceramic NI-780S-4 package requires screw-down mounting with proper torque to maintain the thermal and electrical ground path - improper mounting rapidly degrades output power and reliability.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that supplement the manufacturer datasheet for engineers sourcing RF power transistors for cellular infrastructure.
بدائل مباشرة لـ MRF8P20161HSR3 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع MRF8P20161HSR3 (نفس عامل الشكل والبصمة) — يختلف في Application, Manufacturer, Transistor Type.
MRF8P20160HSR3
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←MRF8P20180HSR3
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها📋 بديل مرجعي (غير موجود في الكتالوج)
MRF8P20161HSR5
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها📋 بديل مرجعي (غير موجود في الكتالوج)
MRF8P20161HR3
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها📋 بديل مرجعي (غير موجود في الكتالوج)
MRF8P20161HSR3 الحدود القصوى والخصائص الكهربائية
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| نوع الترانزستور | N-Channel Lateral MOSFET (RF Power) |
| Frequency Range | 1880 MHz to 2025 MHz |
| Drain Supply Voltage (Vdd) | 28 V |
| Average Output Power | 37 W (W-CDMA) |
| Small-Signal Gain | 16.4 dB at 1.92 GHz |
| Quiescent Drain Current (Idq) | 550 mA |
| Test Frequency | 1.92 GHz |
| Operating Class | Class AB or Class C |
| العلبة | NI-780S-4 (NI-780HS-4) ceramic air-cavity, surface mount |
| نوع التركيب | Surface mount with screw-down flange |
| Polarity / Channel | N-Channel enhancement-mode lateral |
| Modulation Support | W-CDMA, LTE, multi-carrier GSM |
| Application | CDMA / cellular base station RF power amplifier |
| Operating Mode | Enhancement mode |
تكوين أطراف MRF8P20161HSR3
| دبوس 1 | RFIN / Gate Bias — RF input matched port combined with gate DC bias feed; consult datasheet mechanical drawing for exact pad geometry |
| دبوس 2 | Drain Bias — Drain DC supply feed (28 V nominal); route through RF choke and decoupling network |
| دبوس 3 | RFOUT — RF output matched port to 50-ohm load; low-parasitic layout required |
| دبوس 4 | Flange / Ground — Thermal and RF ground; must be screw-mounted to heatsink with proper torque |
منطقة التشغيل الآمن (DC, Tj <= 200 C)
التطبيقات النموذجية
MRF8P20161HSR3 مناسب لـ 6 التطبيقs: W-CDMA Macro-Cell Base Station Power Amplifier, LTE eNodeB Power Amplifier Module, Multi-Carrier GSM Repeater / Booster, Doherty PA Final Stage, Aerospace and Defense RF Transmitter, Industrial RF Heating and Plasma Generator.
W-CDMA Macro-Cell Base Station Power Amplifier
The MRF8P20161HSR3 is a primary candidate for the final-stage power amplifier in 1880-2025 MHz W-CDMA macro-cell base stations. Its 37 W average output power matches typical 4-carrier W-CDMA PA requirements, while 16.4 dB gain at 1.92 GHz reduces the drive-stage gain burden and shrinks the BOM. Operating at 28 V with 550 mA Idq, the part is biased for Class AB linearity, supporting digital pre-distortion loops that extend efficiency while meeting ACLR specifications across multi-carrier waveforms.
موصى به
LTE eNodeB Power Amplifier Module
LTE eNodeB base stations operating in Band 1 (1920-1980 MHz uplink) and Band 39/40/41 within the 1880-2025 MHz range can use the MRF8P20161HSR3 as the final PA stage. The 16.4 dB gain flattens the gain budget so a single driver transistor suffices, and the 37 W average output envelope handles 4x4 MIMO configurations after signal combining. Designers commonly pair this part with digital pre-distortion processors to meet 3GPP EVM and spectral emission masks across LTE carrier aggregation deployments.
موصى به
Multi-Carrier GSM Repeater / Booster
Cellular repeaters and signal boosters covering the 1880-2025 MHz DCS-1800 / UMTS bands can use the MRF8P20161HSR3 to amplify multi-carrier GSM and UMTS signals simultaneously. The high gain (16.4 dB) at 1.92 GHz ensures the booster overcomes feeder-cable losses, while the 37 W power envelope supports outdoor pole-mount deployment where heat dissipation is constrained. Class AB bias keeps intermodulation distortion low for multi-carrier operation, critical for in-band repeaters that must meet regulatory spurious-emission limits.
موصى به
Doherty PA Final Stage
Doherty power amplifier architectures combine a main amplifier with a peaking amplifier to boost efficiency at backed-off power levels, and the MRF8P20161HSR3 is well-suited as the main PA in such a topology. The 37 W average envelope supports the Doherty sweet spot where efficiency peaks around 6 dB back-off, ideal for LTE and 5G NR signals with high peak-to-average ratios. The ceramic NI-780S-4 package handles the thermal load of continuous Doherty operation while maintaining stable 50-ohm matching at the combining point.
موصى به
Aerospace and Defense RF Transmitter
Military and aerospace RF transmitters operating in the 1880-2025 MHz range for tactical communications, electronic warfare, and radar subsystems can leverage the MRF8P20161HSR3's robust ceramic-package construction. The NI-780S-4 air-cavity package offers excellent thermal performance and hermetic sealing suitable for harsh-environment airborne and ground-mobile platforms. Its 37 W power envelope suits long-range data links and jammer front-ends where high linearity and ruggedness are mandatory design constraints.
موصى به
Industrial RF Heating and Plasma Generator
Industrial RF generators for plasma excitation, dielectric heating, and material processing at 1.9 GHz-class frequencies can use the MRF8P20161HSR3 as the final amplification stage. The 37 W average power and 28 V supply suit continuous-duty industrial cycles where reliability and service life outweigh the BOM cost sensitivity of consumer applications. The lateral MOSFET architecture withstands the high VSWR conditions of plasma loads, and the ceramic package provides the mechanical ruggedness required for factory-floor installations.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ MRF8P20161HSR3 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | MRF8P20160HSR3 | MRF8P20180HSR3 | MRF8P20161HSR5 | MRF8P20161HR3 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S-4 ceramic | NI-780S-4 ceramic - same | NI-780S-4 ceramic - same | NI-780S-4 ceramic - same | NI-780S-4 ceramic - same |
| Drain Supply Voltage | 28 V | 28 V - same | 28 V - same | 28 V - same | 28 V - same |
| Operating Class | Class AB / Class C | Class AB / Class C - same | Class AB / Class C - same | Class AB / Class C - same | Class AB / Class C - same |
| Polarity / Channel | N-Channel lateral MOSFET | N-Channel lateral MOSFET - same | N-Channel lateral MOSFET - same | N-Channel lateral MOSFET - same | N-Channel lateral MOSFET - same |
أبرز الفروقات
- High gain at 1.92 GHz reduces driver-stage complexity (مقابلMRF8P20160HSR3)
- Lateral N-channel MOSFET architecture optimized for cellular bands (مقابلMRF8P20180HSR3)
- 37 W average power in compact ceramic NI-780S-4 package (مقابلMRF8P20161HSR5)
ملاحظات التصميم
The NI-780S-4 ceramic package must be screw-mounted to a heatsink or cold plate with proper torque (typically 8-10 in-lb) and thermal compound. Under continuous W-CDMA envelope conditions with 37 W average output at 28 V, the device dissipates significant DC power and the junction-to-case thermal resistance is the dominant heat-transfer path. Inadequate mounting rapidly degrades output power, gain, and mean-time-to-failure. Verify case temperature stays below the maximum rating by placing a thermocouple at the package flange.
The PCB layout must provide 50-ohm microstrip or stripline transmission lines at the RFIN and RFOUT pads, with the package leads soldered to pads that match the manufacturer mechanical drawing dimensions. Use low-loss PCB substrate such as Rogers RO4350B for the 1.9 GHz band to minimize insertion loss and maintain impedance control. Decoupling capacitors on the drain bias feed should combine a 10 uF tantalum or ceramic bulk capacitor with 100 nF and 10 nF ceramics placed close to the package lead for high-frequency suppression.
Never operate the MRF8P20161HSR3 into an open or short-circuit load without proper load-pull matching; VSWR excursions above 5:1 can damage the die even within the SOA. Ensure the gate bias is applied before the drain supply during turn-on, and removed after the drain supply during turn-off, to prevent thermal runaway or oscillation. Idq should be set to 550 mA for Class AB linear operation; significant deviation changes gain, linearity, and efficiency.
Keep the gate and drain bias feed lines separated by a ground plane pour to prevent feedback that can cause oscillation. The RFIN and RFOUT traces should not run parallel to each other over long distances to minimize coupling. Use multiple ground vias around the package mounting flange to provide a low-inductance RF ground return path; this is essential for stable gain and low spurious output across the operating band.
معلومات الامتثال
RoHS, REACH, lead-free, halogen-free, and conflict-minerals status not explicitly confirmed in available data sources. The ceramic NI-780S-4 package may contain lead-bearing die-attach materials common in high-power RF transistors; consult NXP product page or manufacturer datasheet markings for definitive compliance. AEC-Q100 not applicable - this is a discrete RF power MOSFET, not an automotive-qualified IC.
