SI2337DS-T1-E3 - P-Channel 80V 2.2A TrenchFET MOSFET | Vishay
MPN: SI2337DS-T1-E3 ✓ نشطSI2337DS-T1-E3 نظرة عامة
A P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled transistor that conducts when the gate is pulled below the source. P-Channel parts simplify high-side switching designs because the load can sit at ground rather than at the switched rail, eliminating the need for a charge pump or bootstrap circuit in many topologies. Within the power semiconductor hierarchy, P-Channel MOSFETs belong to discrete semiconductors -> transistors -> MOSFETs, and they sit alongside N-Channel MOSFETs, IGBTs, and bipolar transistors as the workhorses of modern power conversion.
Key features include the TrenchFET generation-3 cell architecture which reduces Rds(on) per unit silicon area, an integrated antiparallel body diode that simplifies synchronous-free designs, and halogen-free construction per IEC 61249-2-21. The -80V Vds rating provides substantial headroom for 48V telecom rails, automotive load-dump transients, and industrial bus switching. The SOT-23-3 footprint keeps the part compatible with hand-soldering and standard reflow profiles used by hobbyist and production lines alike.
In load-switch and high-side switch topologies, the SI2337DS-T1-E3 reduces BOM count by removing the need for gate-drive transformers. The trench-gate structure minimizes conduction losses, while the small SOT-23-3 outline supports high-density PCB layouts. Designers targeting USB power switches, battery protection circuits, and DC/DC converters benefit from its low gate charge and fast switching edges.
Typical applications include USB port power switching, battery management system (BMS) charge/discharge FETs, load switching in portable electronics, and high-side drive of relays and solenoids. The wide -55C to +150C operating range also suits automotive underhood modules and industrial controls.
When designing with this device, derate conduction current aggressively above 25C ambient - the 2.2A Tc rating drops to roughly 0.6A at 70C in still air. Use a gate resistor of 10-100 ohm to limit ringing, and ensure Vgs stays below the +-20V absolute maximum to avoid gate-oxide rupture.
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SI2337DS-T1-GE3
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SI2337DS-T1-E3 الحدود القصوى والخصائص الكهربائية
| FET Type | P-Channel MOSFET |
| Drain-to-Source Voltage (Vdss) | 80 V |
| Continuous Drain Current (Id) at Tc=25C | 2.2 A |
| Rds(on) Max at Vgs=10V | 270 mOhm |
| Gate-to-Source Voltage (Vgs) | +-20 V |
| Power Dissipation (Ta) | 760 mW |
| Power Dissipation (Tc) | 2.5 W |
| درجة حرارة الوصلة التشغيلية | -55C to +150C |
| العلبة | SOT-23-3 (TO-236) |
| نوع التركيب | Surface Mount |
| Technology | TrenchFET |
| خالٍ من الهالوجين | Yes (per IEC 61249-2-21) |
| Channel Mode | Enhancement-mode |
| Integrated Body Diode | Yes (antiparallel) |
تكوين أطراف SI2337DS-T1-E3
| دبوس 1 | Gate — Gate control input (MOSFET gate) |
| دبوس 2 | Source — Source terminal (P-Channel, conventional current out) |
| دبوس 3 | Drain — Drain terminal; tab side of package, doubles as thermal pad |
منطقة التشغيل الآمن (DC)
التطبيقات النموذجية
SI2337DS-T1-E3 مناسب لـ 6 التطبيقs: USB Port Power Switch, Battery Protection Load Switch, Load Switching in Portable Electronics, High-Side Relay and Solenoid Drive, DC/DC Converter Synchronous Rectifier (Low Side), Industrial Control Bus Switching.
USB Port Power Switch
The SI2337DS-T1-E3 fits USB high-side power switching because its P-Channel polarity lets the VBUS load sit at ground-returning-rail topology, and its 80V Vds rating provides exceptional transient margin above the 5V USB rail during hot-plug events. The 270 mOhm max Rds(on) at Vgs=10V keeps conduction loss under 50 mW at 0.5A typical USB load, well within the 760 mW Ta dissipation budget without a heatsink. Place the part between VBUS_IN (drain) and VBUS_OUT (source) with a 100k pull-up on the gate to the drain rail for default-off behavior, then drive the gate low with the MCU to enable the port.
موصى به
Battery Protection Load Switch
In single-cell Li-ion or multi-cell battery packs, the SI2337DS-T1-E3 functions as a low-side or high-side protection switch where its 2.2A Id and -55C to +150C operating range accommodate harsh battery thermal environments. The integrated antiparallel body diode simplifies reverse-polarity protection when paired with a fuse, and the SOT-23-3 footprint enables dense BMS layouts. With 80V Vds headroom, the part tolerates inductive kickback from motors or solenoids in cordless tools when used as a high-side disconnect.
موصى به
Load Switching in Portable Electronics
The SI2337DS-T1-E3 is well suited for handheld and wearable load switching because its P-Channel topology allows direct MCU GPIO drive without a charge pump, reducing quiescent current and BOM count. The TrenchFET cell architecture delivers low Rds(on) per unit silicon, important when switching rails powering radios, sensors, or display backlights in battery-powered products. Designers target the part for sub-2A rails where SOT-23-3 footprint, 2.5W Tc dissipation, and +-20V Vgs rating give generous design margins.
موصى به
High-Side Relay and Solenoid Drive
The SI2337DS-T1-E3 simplifies driving relays and solenoids because P-Channel high-side switches connect the load to ground rather than to the switched rail - no charge pump or floating gate drive is needed. The 80V Vds rating handles 24V industrial relay coils and the inductive flyback transients when paired with a flyback diode across the coil. With 2.2A continuous rating the part directly switches most signal relays and small solenoids without paralleling multiple MOSFETs, saving PCB area and cost.
موصى به
DC/DC Converter Synchronous Rectifier (Low Side)
When used as a low-side synchronous rectifier in buck or buck-boost converters, the SI2337DS-T1-E3's low Rds(on) reduces conduction loss compared to a Schottky diode, improving efficiency by 2-4%. The P-Channel part suits low-side sync-FET roles where the source is at switching-node potential and the gate can be driven with respect to ground via a level shifter. For sub-2A converters the 760 mW dissipation rating is adequate when paired with adequate copper pour.
موصى به
Industrial Control Bus Switching
In industrial 24V and 48V control systems, the SI2337DS-T1-E3 serves as a rugged high-side switch with its 80V Vds rating tolerating load-dump transients on 24V automotive buses and large inductive spikes on 48V telecom rails. The wide -55C to +150C junction temperature range enables underhood automotive and outdoor industrial deployments where standard MOSFETs would derate excessively. The SOT-23-3 footprint allows high-density PCB designs while maintaining the voltage margin demanded by IEC 61131-2 and similar industrial standards.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ SI2337DS-T1-E3 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | SI2337DS-T1-GE3 | SI2333CDS-T1-GE3 | AO3401A | DMP3098L-7 | NTR4101PT |
|---|---|---|---|---|---|---|
| Brand | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Alpha & Omega Semiconductor | Diodes Incorporated | onsemi |
| Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same |
| FET Type | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Operating Temperature | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C |
أبرز الفروقات
- Highest Vds rating in SOT-23-3 P-Channel drop-in family (مقابلAO3401A)
- TrenchFET generation provides competitive Rds(on) for the SOT-23-3 footprint (مقابلDMP3098L-7)
- Wide -55C to +150C operating range matches automotive/industrial grades (مقابلNTR4101PT)
ملاحظات التصميم
The SOT-23-3 package has theta_JA around 150-200 C/W on a 1-inch-square 1oz copper pad in still air, so the 760 mW Ta rating equates to roughly 2.2A at 25C only on a substantial copper pour. In practice derate Id below 1A above 70C ambient. Estimated: assuming 150 C/W theta_JA and 150C max junction, Pdiss(max) = (150-25)/150 = 0.83 W continuous, yielding Id(max) ~1.7A at Vds=80V before thermal limiting, but in steady-state at 70C ambient it is much lower.
Solder the drain tab (pin 3) to a copper pour of at least 100 mm^2 to achieve the rated 2.5W Tc dissipation. For multi-layer boards, stitch thermal vias under the tab to inner ground/power planes to spread heat. Without adequate copper, junction temperature can exceed 150C even at modest loads, causing thermal shutdown or accelerated aging.
P-Channel MOSFETs turn ON when Vgs is pulled below Vgs(th) (negative for P-Channel). Do NOT drive the gate above Vgs = +-20V absolute maximum or the gate oxide ruptures. Add a 10-100 ohm gate resistor to limit ringing when driving from a fast MCU GPIO, and include a pull-up resistor on the gate to VBUS to default the switch OFF at power-up. For inductive loads, place a flyback diode across the coil, not across the MOSFET, to clamp kickback at the load.
معلومات الامتثال
Halogen-free per IEC 61249-2-21 per Vishay datasheet. Standard E3 suffix is lead-free and RoHS compliant. GE3 suffix additionally guarantees halogen-free. Not AEC-Q100 qualified - consider AEC-Q100 automotive-grade P-Channel parts (e.g. Vishay SQ series) for automotive applications.
