SI2337DS-T1-E3 - P-Channel 80V 2.2A TrenchFET MOSFET | Vishay
부품 번호: SI2337DS-T1-E3 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.48 | $0.48 |
| 10 | $0.41 | $4.10 |
| 100 | $0.32 | $32.00 |
| 500 | $0.25 | $125.00 |
| 1,000 | $0.19 | $190.00 |
SI2337DS-T1-E3 개요
A P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled transistor that conducts when the gate is pulled below the source. P-Channel parts simplify high-side switching designs because the load can sit at ground rather than at the switched rail, eliminating the need for a charge pump or bootstrap circuit in many topologies. Within the power semiconductor hierarchy, P-Channel MOSFETs belong to discrete semiconductors -> transistors -> MOSFETs, and they sit alongside N-Channel MOSFETs, IGBTs, and bipolar transistors as the workhorses of modern power conversion.
Key features include the TrenchFET generation-3 cell architecture which reduces Rds(on) per unit silicon area, an integrated antiparallel body diode that simplifies synchronous-free designs, and halogen-free construction per IEC 61249-2-21. The -80V Vds rating provides substantial headroom for 48V telecom rails, automotive load-dump transients, and industrial bus switching. The SOT-23-3 footprint keeps the part compatible with hand-soldering and standard reflow profiles used by hobbyist and production lines alike.
In load-switch and high-side switch topologies, the SI2337DS-T1-E3 reduces BOM count by removing the need for gate-drive transformers. The trench-gate structure minimizes conduction losses, while the small SOT-23-3 outline supports high-density PCB layouts. Designers targeting USB power switches, battery protection circuits, and DC/DC converters benefit from its low gate charge and fast switching edges.
Typical applications include USB port power switching, battery management system (BMS) charge/discharge FETs, load switching in portable electronics, and high-side drive of relays and solenoids. The wide -55C to +150C operating range also suits automotive underhood modules and industrial controls.
When designing with this device, derate conduction current aggressively above 25C ambient - the 2.2A Tc rating drops to roughly 0.6A at 70C in still air. Use a gate resistor of 10-100 ohm to limit ringing, and ensure Vgs stays below the +-20V absolute maximum to avoid gate-oxide rupture.
드롭인 대체품: SI2337DS-T1-E3 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
SI2337DS-T1-GE3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI2333CDS-T1-GE3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
AO3401A
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
DMP3098L-7
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
NTR4101PT
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI2337DS-T1-E3 최대 정격 & 전기적 특성
| FET Type | P-Channel MOSFET |
| Drain-to-Source Voltage (Vdss) | 80 V |
| Continuous Drain Current (Id) at Tc=25C | 2.2 A |
| Rds(on) Max at Vgs=10V | 270 mOhm |
| Gate-to-Source Voltage (Vgs) | +-20 V |
| Power Dissipation (Ta) | 760 mW |
| Power Dissipation (Tc) | 2.5 W |
| 동작 접합 온도 | -55C to +150C |
| 패키지 | SOT-23-3 (TO-236) |
| 실장 유형 | Surface Mount |
| Technology | TrenchFET |
| 할로겐 프리 | Yes (per IEC 61249-2-21) |
| Channel Mode | Enhancement-mode |
| Integrated Body Diode | Yes (antiparallel) |
SI2337DS-T1-E3 핀 구성
| 핀 1 | Gate — Gate control input (MOSFET gate) |
| 핀 2 | Source — Source terminal (P-Channel, conventional current out) |
| 핀 3 | Drain — Drain terminal; tab side of package, doubles as thermal pad |
안전 동작 영역 (DC)
일반적인 애플리케이션
SI2337DS-T1-E3 적합 용도: 6 애플리케이션s: USB Port Power Switch, Battery Protection Load Switch, Load Switching in Portable Electronics, High-Side Relay and Solenoid Drive, DC/DC Converter Synchronous Rectifier (Low Side), Industrial Control Bus Switching.
USB Port Power Switch
The SI2337DS-T1-E3 fits USB high-side power switching because its P-Channel polarity lets the VBUS load sit at ground-returning-rail topology, and its 80V Vds rating provides exceptional transient margin above the 5V USB rail during hot-plug events. The 270 mOhm max Rds(on) at Vgs=10V keeps conduction loss under 50 mW at 0.5A typical USB load, well within the 760 mW Ta dissipation budget without a heatsink. Place the part between VBUS_IN (drain) and VBUS_OUT (source) with a 100k pull-up on the gate to the drain rail for default-off behavior, then drive the gate low with the MCU to enable the port.
추천
Battery Protection Load Switch
In single-cell Li-ion or multi-cell battery packs, the SI2337DS-T1-E3 functions as a low-side or high-side protection switch where its 2.2A Id and -55C to +150C operating range accommodate harsh battery thermal environments. The integrated antiparallel body diode simplifies reverse-polarity protection when paired with a fuse, and the SOT-23-3 footprint enables dense BMS layouts. With 80V Vds headroom, the part tolerates inductive kickback from motors or solenoids in cordless tools when used as a high-side disconnect.
추천
Load Switching in Portable Electronics
The SI2337DS-T1-E3 is well suited for handheld and wearable load switching because its P-Channel topology allows direct MCU GPIO drive without a charge pump, reducing quiescent current and BOM count. The TrenchFET cell architecture delivers low Rds(on) per unit silicon, important when switching rails powering radios, sensors, or display backlights in battery-powered products. Designers target the part for sub-2A rails where SOT-23-3 footprint, 2.5W Tc dissipation, and +-20V Vgs rating give generous design margins.
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High-Side Relay and Solenoid Drive
The SI2337DS-T1-E3 simplifies driving relays and solenoids because P-Channel high-side switches connect the load to ground rather than to the switched rail - no charge pump or floating gate drive is needed. The 80V Vds rating handles 24V industrial relay coils and the inductive flyback transients when paired with a flyback diode across the coil. With 2.2A continuous rating the part directly switches most signal relays and small solenoids without paralleling multiple MOSFETs, saving PCB area and cost.
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DC/DC Converter Synchronous Rectifier (Low Side)
When used as a low-side synchronous rectifier in buck or buck-boost converters, the SI2337DS-T1-E3's low Rds(on) reduces conduction loss compared to a Schottky diode, improving efficiency by 2-4%. The P-Channel part suits low-side sync-FET roles where the source is at switching-node potential and the gate can be driven with respect to ground via a level shifter. For sub-2A converters the 760 mW dissipation rating is adequate when paired with adequate copper pour.
추천
Industrial Control Bus Switching
In industrial 24V and 48V control systems, the SI2337DS-T1-E3 serves as a rugged high-side switch with its 80V Vds rating tolerating load-dump transients on 24V automotive buses and large inductive spikes on 48V telecom rails. The wide -55C to +150C junction temperature range enables underhood automotive and outdoor industrial deployments where standard MOSFETs would derate excessively. The SOT-23-3 footprint allows high-density PCB designs while maintaining the voltage margin demanded by IEC 61131-2 and similar industrial standards.
추천
추천 제품 요약
엔지니어링 참조 데이터: SI2337DS-T1-E3 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | SI2337DS-T1-GE3 | SI2333CDS-T1-GE3 | AO3401A | DMP3098L-7 | NTR4101PT |
|---|---|---|---|---|---|---|
| Brand | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Alpha & Omega Semiconductor | Diodes Incorporated | onsemi |
| Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same |
| FET Type | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Operating Temperature | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C |
주요 차별점
- Highest Vds rating in SOT-23-3 P-Channel drop-in family (vs AO3401A)
- TrenchFET generation provides competitive Rds(on) for the SOT-23-3 footprint (vs DMP3098L-7)
- Wide -55C to +150C operating range matches automotive/industrial grades (vs NTR4101PT)
설계 노트
The SOT-23-3 package has theta_JA around 150-200 C/W on a 1-inch-square 1oz copper pad in still air, so the 760 mW Ta rating equates to roughly 2.2A at 25C only on a substantial copper pour. In practice derate Id below 1A above 70C ambient. Estimated: assuming 150 C/W theta_JA and 150C max junction, Pdiss(max) = (150-25)/150 = 0.83 W continuous, yielding Id(max) ~1.7A at Vds=80V before thermal limiting, but in steady-state at 70C ambient it is much lower.
Solder the drain tab (pin 3) to a copper pour of at least 100 mm^2 to achieve the rated 2.5W Tc dissipation. For multi-layer boards, stitch thermal vias under the tab to inner ground/power planes to spread heat. Without adequate copper, junction temperature can exceed 150C even at modest loads, causing thermal shutdown or accelerated aging.
P-Channel MOSFETs turn ON when Vgs is pulled below Vgs(th) (negative for P-Channel). Do NOT drive the gate above Vgs = +-20V absolute maximum or the gate oxide ruptures. Add a 10-100 ohm gate resistor to limit ringing when driving from a fast MCU GPIO, and include a pull-up resistor on the gate to VBUS to default the switch OFF at power-up. For inductive loads, place a flyback diode across the coil, not across the MOSFET, to clamp kickback at the load.
규정 준수 정보
Halogen-free per IEC 61249-2-21 per Vishay datasheet. Standard E3 suffix is lead-free and RoHS compliant. GE3 suffix additionally guarantees halogen-free. Not AEC-Q100 qualified - consider AEC-Q100 automotive-grade P-Channel parts (e.g. Vishay SQ series) for automotive applications.
