STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics
MPN: STW45NM50 ✓ نشطSTW45NM50 نظرة عامة
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering fast switching speeds and low conduction losses. Power MOSFETs are fundamental building blocks in power electronics, forming the basis of power management systems, motor drives, and switch-mode power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs.
Key features of the STW45NM50 include a low gate charge (Qg) of 120 nC, which enables fast switching and reduced driver requirements. The device also features a high avalanche ruggedness, with an avalanche energy rating of 1.2 J, making it suitable for applications where inductive loads are present. The TO-247 package offers a low thermal resistance of 0.5°C/W, allowing efficient heat dissipation in high-power designs.
The STW45NM50 utilizes ST's proprietary MDmesh technology, which reduces on-resistance and gate charge compared to conventional MOSFETs. This technology enhances the device's efficiency and switching performance, making it ideal for high-frequency power conversion circuits. The device also includes an integrated body diode with fast recovery characteristics, reducing switching losses in bridge topologies.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, motor drives, and uninterruptible power supplies (UPS). The high voltage rating and low on-resistance make it suitable for 400V and 500V bus systems commonly found in industrial and telecom equipment.
When designing with this device, ensure proper gate drive voltage (typically 10V to 15V) to fully enhance the channel and minimize conduction losses. The device is RoHS compliant and halogen-free, meeting modern environmental standards. For automotive applications, consider the AEC-Q101 qualified variants if available.
بدائل مباشرة لـ STW45NM50 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع STW45NM50 (نفس عامل الشكل والبصمة) — يختلف في Operating Temperature Range, Continuous Drain Current (ID) at Tc=25C, Drain-Source Voltage (VDS), Package / Case, Power Dissipation (PD) at Tc=25C.
STW45NM50FP
📋 بديل مرجعي (غير موجود في الكتالوج)
STW45NM50-1
📋 بديل مرجعي (غير موجود في الكتالوج)
IRFP460
📋 بديل مرجعي (غير موجود في الكتالوج)
IXFH46N50P
📋 بديل مرجعي (غير موجود في الكتالوج)
FDP47AN15A0
📋 بديل مرجعي (غير موجود في الكتالوج)
STW45NM50 الحدود القصوى والخصائص الكهربائية
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 500 V |
| Continuous Drain Current (ID) at 25°C | 45 A |
| Continuous Drain Current (ID) at 100°C | 30 A |
| Pulsed Drain Current (IDM) | 180 A |
| Gate-Source Voltage (VGS) | ±30 V |
| On-Resistance (RDS(on)) | 0.09 ohm |
| Gate Charge (Qg) | 120 nC |
| Avalanche Energy (EAS) | 1.2 J |
| Power Dissipation (PD) | 450 W |
| نطاق درجة حرارة التشغيل | -55°C to +150°C |
| العلبة | TO-247 |
| نوع التركيب | Through Hole |
| حالة RoHS | Compliant |
| خالٍ من الهالوجين | Yes |
تكوين أطراف STW45NM50
| دبوس 1 | Gate — Gate drive input |
| دبوس 2 | Drain — Drain connection |
| دبوس 3 | Source — Source connection |
منطقة التشغيل الآمن
التطبيقات النموذجية
STW45NM50 مناسب لـ 6 التطبيقs: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), Motor Drives, Uninterruptible Power Supplies (UPS), Welding Equipment, Solar Inverters.
Switch-Mode Power Supplies (SMPS)
The STW45NM50 is ideal for SMPS due to its high voltage rating (500V) and low on-resistance (0.09 ohm). In a typical flyback or forward converter, the MOSFET switches at high frequency to regulate output voltage. Its low gate charge (120 nC) enables fast switching, reducing switching losses. The device's avalanche ruggedness (1.2 J) ensures reliability during load transients. Compared to IGBTs, the MOSFET offers higher efficiency at frequencies above 100 kHz. Designers should ensure proper gate drive voltage (10-15V) and adequate heatsinking to manage power dissipation, which can reach 450W at maximum. The TO-247 package facilitates heat transfer to a heatsink, making it suitable for power levels up to several kilowatts.
موصى به
Power Factor Correction (PFC)
In PFC circuits, the STW45NM50 is used in boost converters to shape the input current waveform. Its 500V VDS rating is sufficient for 400V bus systems, and its low RDS(on) minimizes conduction losses. The device's fast switching capability (low Qg) allows operation at high frequencies, reducing the size of magnetic components. The avalanche rating ensures robustness during line transients. For a typical 1kW PFC stage, the MOSFET dissipates around 20W, requiring a heatsink. The TO-247 package is well-suited for this application, providing low thermal resistance. Designers should consider the gate drive requirements and ensure proper layout to minimize parasitic inductance.
موصى به
Motor Drives
The STW45NM50 is suitable for motor drives, particularly in variable frequency drives (VFDs) for industrial motors. Its high current rating (45A) and voltage rating (500V) make it capable of driving motors up to several kilowatts. The low on-resistance reduces conduction losses, improving overall efficiency. The device's fast body diode helps reduce switching losses in bridge configurations. In a typical three-phase inverter, six MOSFETs are used, each switching at frequencies up to 20 kHz. The TO-247 package allows for easy mounting on heatsinks. Designers must ensure proper gate drive isolation and protection against overcurrent and overvoltage conditions.
موصى به
Uninterruptible Power Supplies (UPS)
In UPS systems, the STW45NM50 is used in the inverter stage to convert DC to AC. Its high voltage and current ratings allow it to handle the power requirements of UPS units ranging from 1kVA to 10kVA. The low RDS(on) ensures high efficiency, which is critical for battery life. The device's ruggedness against avalanche events is beneficial during load switching. In a typical UPS inverter, the MOSFETs are driven by a PWM signal at frequencies around 20 kHz. The TO-247 package facilitates thermal management, as the inverter stage can dissipate significant heat. Designers should consider the total power dissipation and provide adequate cooling.
موصى به
Welding Equipment
The STW45NM50 is used in inverter-based welding machines, where it switches at high frequencies to control the welding current. Its high current rating (45A) and voltage rating (500V) make it suitable for the demanding conditions of welding. The low on-resistance reduces power losses, improving efficiency and reducing heat generation. The device's ruggedness ensures reliability in harsh environments. In a typical welding inverter, the MOSFETs are used in a full-bridge configuration, switching at frequencies up to 100 kHz. The TO-247 package allows for effective heatsinking, which is essential as the device may dissipate over 100W. Designers should ensure proper gate drive and protection against overcurrent.
موصى به
Solar Inverters
In solar inverters, the STW45NM50 is used in DC-DC converters and the inverter stage to convert solar panel output to grid-compatible AC. Its high voltage rating (500V) is suitable for solar panel strings up to 400V. The low RDS(on) maximizes efficiency, which is crucial for energy harvesting. The device's fast switching reduces losses, improving overall system efficiency. In a typical solar inverter, the MOSFETs are used in a boost converter and a full-bridge inverter. The TO-247 package provides good thermal performance, essential for outdoor installations. Designers should consider the maximum power point tracking (MPPT) requirements and ensure proper thermal management.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ STW45NM50 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | STW45NM50FP | IRFP460 | IXFH46N50P |
|---|---|---|---|---|
| Package | TO-247 | TO-247 (isolated) | TO-247 | TO-247 |
| Brand | STMicroelectronics | STMicroelectronics | Vishay | IXYS |
| Drain-Source Voltage (VDS) | 500 V | 500 V | 500 V | 500 V |
| Continuous Drain Current (ID) | 45 A | 45 A | 20 A | 46 A |
| On-Resistance (RDS(on)) | 0.09 ohm | 0.09 ohm | 0.27 ohm | 0.10 ohm |
| Gate Charge (Qg) | 120 nC | 120 nC | 210 nC | 110 nC |
| Avalanche Energy (EAS) | 1.2 J | 1.2 J | 0.5 J | 1.0 J |
| Power Dissipation (PD) | 450 W | 450 W | 280 W | 500 W |
أبرز الفروقات
- Lower on-resistance compared to IRFP460 (مقابلIRFP460)
- Higher avalanche energy rating (مقابلIRFP460)
- Higher current rating than IRFP460 (مقابلIRFP460)
ملاحظات التصميم
The STW45NM50 can dissipate up to 450W at 25°C case temperature. In a typical SMPS application with VDS=400V and ID=10A, power dissipation is approximately 9W (I^2*R). Use a heatsink with thermal resistance below 0.5°C/W to keep junction temperature below 125°C. Ensure proper thermal interface material (TIM) is applied between the TO-247 tab and heatsink.
For high-frequency switching, minimize the gate drive loop area to reduce parasitic inductance. Place the gate resistor (typically 10 ohm) close to the gate pin. Use a low-inductance layout for the drain and source connections, and consider a snubber circuit across the drain-source to suppress voltage spikes. The TO-247 package has a large tab that should be connected to the drain or isolated, depending on the application.
Do not exceed the maximum VGS rating of ±30V. Use a gate driver that provides a clean 10-15V gate drive signal. Ensure the device is not operated beyond the SOA, especially during short-circuit conditions. The avalanche rating of 1.2 J should not be exceeded; use a clamping circuit if necessary. Also, be aware that the body diode has a finite reverse recovery time, which can cause losses in bridge topologies.
معلومات الامتثال
RoHS compliant and halogen-free per STMicroelectronics product page. Not AEC-Q100 qualified; for automotive, consider AEC-Q101 qualified variants.
