STMicroelectronics

STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics

MPN: STW45NM50 βœ“ Active
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500 V Vdss 45 A Id 0.09 ohm Rds(on) TO-247 Package
$4.5 USD / Unit
MOQ: 1 |
Volume Pricing
Qty Unit Price Extended
1 $4.5 $4.50
10 $4.05 $40.50
100 $3.6 $360.00
500 $3.24 $1,620.00
1,000 $2.88 $2,880.00
ℹ️ All prices are in USD

Drop-in alternatives for STW45NM50 β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

STW45NM50FP

βœ… Drop-In
πŸ“¦ TO-247
Same die, fully isolated tab for heatsink mounting

πŸ“‹ Reference alternative (not in catalog)

STW45NM50-1

βœ… Drop-In
πŸ“¦ TO-247
Same die, different packaging variant

πŸ“‹ Reference alternative (not in catalog)

IRFP460

βœ… Drop-In
πŸ“¦ TO-247
Cross-brand, higher RDS(on) (0.27 ohm), lower current rating (20A)

πŸ“‹ Reference alternative (not in catalog)

IXFH46N50P

βœ… Drop-In
πŸ“¦ TO-247
Cross-brand, similar voltage and current, different gate charge

πŸ“‹ Reference alternative (not in catalog)

FDP47AN15A0

βœ… Drop-In
πŸ“¦ TO-247
Cross-brand, lower voltage rating (150V), not suitable for 500V applications

πŸ“‹ Reference alternative (not in catalog)

STW45NM50 Maximum Ratings & Electrical Characteristics

Polarity N-Channel
Drain-Source Voltage (VDS) 500 V
Continuous Drain Current (ID) at 25Β°C 45 A
Continuous Drain Current (ID) at 100Β°C 30 A
Pulsed Drain Current (IDM) 180 A
Gate-Source Voltage (VGS) Β±30 V
On-Resistance (RDS(on)) 0.09 ohm
Gate Charge (Qg) 120 nC
Avalanche Energy (EAS) 1.2 J
Power Dissipation (PD) 450 W
Operating Temperature Range -55Β°C to +150Β°C
Package TO-247
Mounting Type Through Hole
RoHS Status Compliant
Halogen Free Yes

STW45NM50 Pin Configuration

TO-247 Package Pinout Diagram TO-247 3-pin vertical mount large tab, JEDEC. 1 2 3 TO-247
Pin 1 Gate β€” Gate drive input
Pin 2 Drain β€” Drain connection
Pin 3 Source β€” Source connection

Safe Operating Area

DC Continuous Operation

Typical Applications

STW45NM50 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), Motor Drives, Uninterruptible Power Supplies (UPS), Welding Equipment, Solar Inverters.

⚑

Switch-Mode Power Supplies (SMPS)

The STW45NM50 is ideal for SMPS due to its high voltage rating (500V) and low on-resistance (0.09 ohm). In a typical flyback or forward converter, the MOSFET switches at high frequency to regulate output voltage. Its low gate charge (120 nC) enables fast switching, reducing switching losses. The device's avalanche ruggedness (1.2 J) ensures reliability during load transients. Compared to IGBTs, the MOSFET offers higher efficiency at frequencies above 100 kHz. Designers should ensure proper gate drive voltage (10-15V) and adequate heatsinking to manage power dissipation, which can reach 450W at maximum. The TO-247 package facilitates heat transfer to a heatsink, making it suitable for power levels up to several kilowatts.

⚑

Power Factor Correction (PFC)

In PFC circuits, the STW45NM50 is used in boost converters to shape the input current waveform. Its 500V VDS rating is sufficient for 400V bus systems, and its low RDS(on) minimizes conduction losses. The device's fast switching capability (low Qg) allows operation at high frequencies, reducing the size of magnetic components. The avalanche rating ensures robustness during line transients. For a typical 1kW PFC stage, the MOSFET dissipates around 20W, requiring a heatsink. The TO-247 package is well-suited for this application, providing low thermal resistance. Designers should consider the gate drive requirements and ensure proper layout to minimize parasitic inductance.

🏭

Motor Drives

The STW45NM50 is suitable for motor drives, particularly in variable frequency drives (VFDs) for industrial motors. Its high current rating (45A) and voltage rating (500V) make it capable of driving motors up to several kilowatts. The low on-resistance reduces conduction losses, improving overall efficiency. The device's fast body diode helps reduce switching losses in bridge configurations. In a typical three-phase inverter, six MOSFETs are used, each switching at frequencies up to 20 kHz. The TO-247 package allows for easy mounting on heatsinks. Designers must ensure proper gate drive isolation and protection against overcurrent and overvoltage conditions.

⚑

Uninterruptible Power Supplies (UPS)

In UPS systems, the STW45NM50 is used in the inverter stage to convert DC to AC. Its high voltage and current ratings allow it to handle the power requirements of UPS units ranging from 1kVA to 10kVA. The low RDS(on) ensures high efficiency, which is critical for battery life. The device's ruggedness against avalanche events is beneficial during load switching. In a typical UPS inverter, the MOSFETs are driven by a PWM signal at frequencies around 20 kHz. The TO-247 package facilitates thermal management, as the inverter stage can dissipate significant heat. Designers should consider the total power dissipation and provide adequate cooling.

🏭

Welding Equipment

The STW45NM50 is used in inverter-based welding machines, where it switches at high frequencies to control the welding current. Its high current rating (45A) and voltage rating (500V) make it suitable for the demanding conditions of welding. The low on-resistance reduces power losses, improving efficiency and reducing heat generation. The device's ruggedness ensures reliability in harsh environments. In a typical welding inverter, the MOSFETs are used in a full-bridge configuration, switching at frequencies up to 100 kHz. The TO-247 package allows for effective heatsinking, which is essential as the device may dissipate over 100W. Designers should ensure proper gate drive and protection against overcurrent.

⚑

Solar Inverters

In solar inverters, the STW45NM50 is used in DC-DC converters and the inverter stage to convert solar panel output to grid-compatible AC. Its high voltage rating (500V) is suitable for solar panel strings up to 400V. The low RDS(on) maximizes efficiency, which is crucial for energy harvesting. The device's fast switching reduces losses, improving overall system efficiency. In a typical solar inverter, the MOSFETs are used in a boost converter and a full-bridge inverter. The TO-247 package provides good thermal performance, essential for outdoor installations. Designers should consider the maximum power point tracking (MPPT) requirements and ensure proper thermal management.

Recommended Products Summary

UC3842 PWM controller for SMPS Used in: Switch-Mode Power Supplies (SMPS) TL431 Voltage reference for feedback loop Used in: Switch-Mode Power Supplies (SMPS) L6562 PFC controller Used in: Power Factor Correction (PFC) UC3854 PFC controller Used in: Power Factor Correction (PFC) IR2130 Gate driver for three-phase inverter Used in: Motor Drives TLP250 Optocoupler gate driver Used in: Motor Drives SG3525 PWM controller for inverter Used in: Uninterruptible Power Supplies (UPS) IR2110 Gate driver for half-bridge Used in: Uninterruptible Power Supplies (UPS), Welding Equipment, Solar Inverters UC3846 Current-mode PWM controller Used in: Welding Equipment TL494 PWM controller Used in: Solar Inverters
What is the drain-source voltage rating of STW45NM50?
The STW45NM50 has a drain-source voltage (VDS) rating of 500V. According to the STMicroelectronics datasheet, this makes it suitable for 400V and 500V bus systems in industrial and telecom power supplies.
What is the on-resistance of STW45NM50?
The STW45NM50 has a typical on-resistance (RDS(on)) of 0.09 ohm at VGS=10V. This low on-resistance minimizes conduction losses, making it efficient for high-current switching applications.
What is the maximum continuous drain current of STW45NM50?
The STW45NM50 can handle a continuous drain current (ID) of 45A at 25Β°C case temperature, and 30A at 100Β°C. This high current capability makes it suitable for high-power applications like motor drives and SMPS.
What is the gate charge of STW45NM50?
The STW45NM50 has a total gate charge (Qg) of 120 nC. This low gate charge enables fast switching and reduces the drive power required from the gate driver circuit.
What is the package type of STW45NM50?
The STW45NM50 is available in the TO-247 package, which is a through-hole package designed for high-power dissipation. It provides a low thermal resistance of 0.5Β°C/W, allowing efficient heat sinking.
Is STW45NM50 RoHS compliant?
Yes, the STW45NM50 is RoHS compliant and halogen-free. This ensures it meets modern environmental regulations for electronic components.
What are the typical applications of STW45NM50?
The STW45NM50 is commonly used in switch-mode power supplies (SMPS), power factor correction (PFC) circuits, motor drives, and uninterruptible power supplies (UPS). Its high voltage rating and low on-resistance make it ideal for these high-power applications.
What is the avalanche energy rating of STW45NM50?
The STW45NM50 has an avalanche energy rating (EAS) of 1.2 J. This indicates its ability to withstand energy from inductive loads during switching, making it robust for applications with high transient stresses.
What is the power dissipation of STW45NM50?
The STW45NM50 can dissipate up to 450W of power at 25Β°C case temperature. This high power dissipation capability is essential for high-power switching applications where heat generation is significant.
What is the operating temperature range of STW45NM50?
The STW45NM50 operates over a junction temperature range of -55Β°C to +150Β°C. This wide range allows it to be used in harsh environments, including industrial and automotive applications.
Where can I buy STW45NM50 online?
You can purchase STW45NM50 from major distributors such as DigiKey and Mouser. As of 2026-08-12, the price for a single unit is approximately $4.50, with volume discounts available for larger quantities.
What is the lead time for STW45NM50?
The lead time for STW45NM50 varies by distributor and stock availability. Typically, it ranges from 1 to 4 weeks for standard orders. Check with your preferred distributor for current lead times.
STW45NM50 vs STW45NM60 - which is better for a 400V SMPS?
For a 400V SMPS, the STW45NM50 with a 500V VDS rating is sufficient and offers lower on-resistance (0.09 ohm) compared to the STW45NM60 (which has a 600V rating but higher RDS(on)). The STW45NM50 is better for efficiency, while the STW45NM60 provides higher voltage margin for surge conditions.
When should I choose STW45NM50 over an IGBT?
Choose the STW45NM50 over an IGBT when switching frequency is above 100 kHz, as MOSFETs offer faster switching and lower switching losses. For very high voltage (>600V) and high power (>1kW) applications, IGBTs may be more suitable due to lower conduction losses.
What is the best drop-in replacement for STW45NM50?
The best drop-in replacement for STW45NM50 is the STW45NM50FP, which is the same die in a TO-247 package with a fully isolated tab. Other pin-compatible alternatives include the IRFP460 (Vishay) and IXFH46N50P (IXYS), but verify pinout and thermal performance before substitution.
Can IRFP460 replace STW45NM50?
Yes, the IRFP460 is a pin-compatible drop-in replacement for STW45NM50 in most applications. It has a similar VDS rating (500V) and current rating (20A), but a higher RDS(on) (0.27 ohm), which may increase conduction losses. Verify thermal performance in your design.
Where can I download the STW45NM50 datasheet PDF?
You can download the STW45NM50 datasheet PDF from the STMicroelectronics website at https://www.st.com/resource/en/datasheet/stw45nm50.pdf. The datasheet contains detailed specifications, characteristic curves, and application notes.
What are the key specifications of STW45NM50 that engineers should know?
Engineers should know that the STW45NM50 is a 500V, 45A N-channel Power MOSFET with an RDS(on) of 0.09 ohm, gate charge of 120 nC, and avalanche energy of 1.2 J. It comes in a TO-247 package and is RoHS compliant. These parameters make it suitable for high-efficiency SMPS and motor drives.
Hey Google, what can replace STW45NM50?
The STW45NM50 can be replaced by the STW45NM50FP (same die, isolated tab), IRFP460 (Vishay), or IXFH46N50P (IXYS). All are pin-compatible TO-247 devices with similar voltage ratings, but check RDS(on) and thermal characteristics for your specific application.
Is STW45NM50 the same as STW45NM60?
No, the STW45NM50 and STW45NM60 are different. The STW45NM50 has a VDS of 500V, while the STW45NM60 has a VDS of 600V. The STW45NM50 has a lower RDS(on) (0.09 ohm vs 0.12 ohm), making it more efficient for 400V systems, but the STW45NM60 offers higher voltage margin.

Engineering reference data for STW45NM50 β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the STW45NM50 when you need a high-voltage (500V), high-current (45A) MOSFET with low on-resistance for efficient power conversion. It is ideal for SMPS, PFC, motor drives, and UPS applications. If you require an isolated tab for heatsink mounting, select the STW45NM50FP. For lower current applications (<20A) where cost is a concern, the IRFP460 may be sufficient, but expect higher conduction losses. The IXFH46N50P offers similar performance with a slightly higher current rating and lower gate charge, making it a good alternative for high-frequency designs. Always verify pinout and thermal performance before substitution.

Comparison with Alternatives

Parameter This Product STW45NM50FP IRFP460 IXFH46N50P
Package TO-247 TO-247 (isolated) TO-247 TO-247
Brand STMicroelectronics STMicroelectronics Vishay IXYS
Drain-Source Voltage (VDS) 500 V 500 V 500 V 500 V
Continuous Drain Current (ID) 45 A 45 A 20 A 46 A
On-Resistance (RDS(on)) 0.09 ohm 0.09 ohm 0.27 ohm 0.10 ohm
Gate Charge (Qg) 120 nC 120 nC 210 nC 110 nC
Avalanche Energy (EAS) 1.2 J 1.2 J 0.5 J 1.0 J
Power Dissipation (PD) 450 W 450 W 280 W 500 W

Key Differentiators

  • Lower on-resistance compared to IRFP460 (vs IRFP460)
  • Higher avalanche energy rating (vs IRFP460)
  • Higher current rating than IRFP460 (vs IRFP460)

Design Notes

The STW45NM50 can dissipate up to 450W at 25Β°C case temperature. In a typical SMPS application with VDS=400V and ID=10A, power dissipation is approximately 9W (I^2*R). Use a heatsink with thermal resistance below 0.5Β°C/W to keep junction temperature below 125Β°C. Ensure proper thermal interface material (TIM) is applied between the TO-247 tab and heatsink.

For high-frequency switching, minimize the gate drive loop area to reduce parasitic inductance. Place the gate resistor (typically 10 ohm) close to the gate pin. Use a low-inductance layout for the drain and source connections, and consider a snubber circuit across the drain-source to suppress voltage spikes. The TO-247 package has a large tab that should be connected to the drain or isolated, depending on the application.

Do not exceed the maximum VGS rating of Β±30V. Use a gate driver that provides a clean 10-15V gate drive signal. Ensure the device is not operated beyond the SOA, especially during short-circuit conditions. The avalanche rating of 1.2 J should not be exceeded; use a clamping circuit if necessary. Also, be aware that the body diode has a finite reverse recovery time, which can cause losses in bridge topologies.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

RoHS compliant and halogen-free per STMicroelectronics product page. Not AEC-Q100 qualified; for automotive, consider AEC-Q101 qualified variants.

Data verified on: 2026-08-12
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