W971GG6NB-6 - 1Gb DDR2-667 SDRAM x16 84-TFBGA | Winbond
MPN: W971GG6NB-6 ✓ نشطW971GG6NB-6 نظرة عامة
A DDR2 SDRAM is a synchronous dynamic random-access memory that transfers data on both clock edges (double data rate) while operating from a 1.8V SSTL_18 interface. It belongs to the broader DRAM family (SDRAM -> DDR -> DDR2) and is positioned between DDR and DDR3 in the JEDEC memory hierarchy, offering higher bandwidth than DDR while consuming lower power than DDR3 thanks to the 1.8V supply rail.
Key features of the W971GG6NB-6 include 8 internal banks for concurrent operations, on-chip termination (Dynamic ODT), auto precharge, data mask (DM) function for write masking, and programmable CAS latency. The chip is supplied from a single 1.8V power rail with a separate 1.8V VDDQ for the DQ bus and supports self-refresh and power-down modes for low standby power. The 84-ball TFBGA package provides a small footprint suitable for high-density designs.
The W971GG6NB-6 architecture uses a double data rate interface that prefetches 4n-bit per I/O per clock cycle, doubling effective throughput without raising the core clock. Programmable impedance matching, calibrated on-die termination, and write leveling simplify board-level signal integrity at the 667 Mbps operating point, making the part straightforward to integrate on standard JEDEC-compliant DDR2 controllers.
Typical applications include set-top boxes, networking equipment, LCD TVs, industrial PCs, printers, and embedded systems that need a cost-effective 1Gbit x16 DDR2 memory. The 84-ball TFBGA footprint and JEDEC-standard command set also allow it to be used as a boot RAM or working memory on SoCs that integrate DDR2 controllers.
When designing with this device, follow JEDEC DDR2 PCB layout rules: maintain 50 ohm single-ended impedance on the DQ/strobe traces, route DQS and CLK with controlled length matching, and provide a clean 1.8V supply with bulk decoupling near each chip. Note that the -6 grade targets DDR2-667 timing; if your design needs higher bandwidth, consider the -18 or -25 grade parts in the same family.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single reference for evaluating W971GG6NB-6 in cost-sensitive DDR2 designs.
بدائل مباشرة لـ W971GG6NB-6 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع W971GG6NB-6 (نفس عامل الشكل والبصمة) — يختلف في Clock Frequency, Memory Type, Mounting Type, Organization, Package.
W971GG6NB-25 TR
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←W971GG6NB-18
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
W971GG6NB-18I
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
W971GG6NB-25I
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
HGD201G16W08
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
W971GG6NB-3
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
W971GG6NB-6 الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR2 SDRAM |
| حجم الذاكرة | 1 Gbit |
| التنظيم | 8M x 8 banks x 16 bits |
| Speed Grade | -6 (DDR2-667, 667 Mbps) |
| Interface Standard | SSTL_18 (1.8 V) |
| Clock Frequency | 333 MHz (667 Mbps data rate) |
| Number of Banks | 8 |
| Burst Length | 4 / 8 (programmable) |
| On-Die Termination | Dynamic ODT (supported) |
| Data Mask (DM) | Supported |
| Auto Precharge | Supported |
| Self-Refresh | Supported |
| Operating Temperature Range (commercial) | 0C to +85C (TCASE) |
| Supply Voltage VDD/VDDQ | 1.8 V (typ) |
| العلبة | 84-ball TFBGA (8 x 12.5 mm) |
| نوع التركيب | Surface Mount (BGA) |
| RoHS / Halogen-Free | Compliant / Halogen-Free (per Winbond) |
| JEDEC Standard | JEDEC DDR2 (DDR2-667 grade) |
دليل تكوين أطراف W971GG6NB-6 84-ball tfbga (8 x 12.5 mm)
تكوين الأطراف لـ W971GG6NB-6 (حزمة 84-ball tfbga (8 x 12.5 mm)). تتضمن هذه الدائرة المتكاملة الرقمية GPIO وواجهات الاتصال (UART وSPI وI2C) وأطراف الطاقة. راجع ورقة بيانات الشركة المصنعة لوظائف الأطراف البديلة وخيارات التكوين. ضرورية لتصميم الأنظمة المدمجة وتخطيط PCB.
لا تتوفر بيانات مفصلة لمخطط التوصيلات لـ W971GG6NB-6.
راجع ورقة البيانات للحصول على تكوين الأطراف الكامل.
التطبيقات النموذجية
W971GG6NB-6 مناسب لـ 7 التطبيقs: Set-Top Box Main Memory, LCD TV / Display Controller Memory, Industrial PC / Embedded SBC, Networking Equipment (Router / Switch), Printer / Multifunction Peripheral Memory, Point-of-Sale (POS) Terminal, IoT Edge Gateway / Smart Home Hub.
Set-Top Box Main Memory
The W971GG6NB-6 fits set-top box main-memory designs because 1Gbit DDR2-667 over x16 provides 10.67 Gbps of peak bandwidth - enough headroom for HD video decode, on-screen display blending, and application processor working sets. The 84-ball TFBGA 8x12.5 mm package sits cleanly under the SoC on a 4-layer JEDEC DDR2 reference board. Dynamic ODT and DM simplify write-data integrity on long DQS traces to the SoC. Compared to a switching to DDR3, designers save cost per bit and reuse mature DDR2 firmware on STB SoCs such as Broadcom BCM7xxx series.
موصى به
LCD TV / Display Controller Memory
The W971GG6NB-6 is well matched to LCD TV mainboards that pair a DDR2 controller with frame-buffer requirements of 256-512 MB. DDR2-667 bandwidth exceeds the needs of 1080p60 LVDS panels and lets the scaler IC or video processor DMA from system memory without bus contention. The 1.8 V SSTL_18 interface aligns with standard TV power trees, and the 84-ball TFBGA simplifies routing under BGA video SoCs. According to Winbond grade sorting, the -6 grade offers a sweet spot between -25 cost and -18 speed for mainstream 4K-upgrade TV designs.
موصى به
Industrial PC / Embedded SBC
The W971GG6NB-6 serves as boot and working memory on industrial single-board computers and embedded SBCs that integrate DDR2 controllers for cost reasons. The commercial 0C to +85C TCASE range covers most factory-floor enclosures, and the -25I/-18I variants extend to -40C to +95C for outdoor installations. Dynamic ODT improves signal integrity across long backplane traces. According to the Winbond datasheet, the 84-ball TFBGA package is qualified for SMT reflow up to 260C peak, suitable for lead-free assembly on industrial boards.
موصى به
Networking Equipment (Router / Switch)
The W971GG6NB-6 fits small-to-medium router and switch designs where 1Gbit DDR2 x16 supplies packet buffers and forwarding-table memory at DDR2-667 rates. The 8-bank architecture supports concurrent read/write across packet ingress and egress paths without bank conflicts. The 1.8 V core reduces power dissipation versus legacy DDR1 designs at similar bandwidth, important for fanless desktop switches. Pin-to-pin compatibility with W971GG6NB-25 lets designers upgrade to DDR2-800 without PCB rework when SoC routing headroom permits.
موصى به
Printer / Multifunction Peripheral Memory
The W971GG6NB-6 is used as image-data buffer and code-storage memory in laser printers and multifunction peripherals. DDR2-667 bandwidth over x16 keeps up with 30-40 ppm print engines streaming CMYK raster data, while the 84-ball TFBGA fits in space-constrained printer mainboards. Auto precharge and power-down modes lower idle power between print jobs. The 1.8 V supply aligns with typical printer power architectures built around 1.8 V buck regulators feeding the SoC and memory together.
موصى به
Point-of-Sale (POS) Terminal
The W971GG6NB-6 suits retail POS terminals that need a reliable, cost-effective working-memory pool for OS, payment applications, and display rendering. DDR2-667 comfortably drives touchscreen UI refresh, barcode scanner buffering, and encrypted payment transactions concurrently. The 84-ball TFBGA package with industrial-grade options handles the 0C to +70C retail environment without thermal concerns. Drop-in compatibility with -25I industrial variants simplifies POS platform variants across indoor and outdoor kiosk deployments.
موصى به
IoT Edge Gateway / Smart Home Hub
The W971GG6NB-6 serves as the working memory in cost-optimized IoT edge gateways and smart-home hubs that aggregate wireless protocols (Zigbee, Thread, Wi-Fi) and run local automation logic. 1Gbit provides room for protocol stacks, secure-element buffers, and OTA staging memory. The 1.8 V supply and JEDEC DDR2 interface integrate cleanly with gateway SoCs that lack DDR3/LPDDR support. Drop-in compatibility with HGD201G16W08 (HGCHIPS) provides second-source assurance for high-volume IoT production.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ W971GG6NB-6 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | W971GG6NB-25 | W971GG6NB-18 | W971GG6NB-18I | W971GG6NB-25I | W971GG6NB-3 | HGD201G16W08 |
|---|---|---|---|---|---|---|---|
| Brand | Winbond | Winbond | Winbond | Winbond | Winbond | Winbond | HGCHIPS |
| Package | 84-ball TFBGA (8x12.5 mm) | 84-ball TFBGA (8x12.5 mm) | 84-ball TFBGA (8x12.5 mm) | 84-ball TFBGA (8x12.5 mm) | 84-ball TFBGA (8x12.5 mm) | 84-ball TFBGA (8x12.5 mm) | 84-ball TFBGA (8x12.5 mm) |
| Memory Density | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit |
| Organization | 8M x 8 banks x 16 bits | 8M x 8 banks x 16 bits | 8M x 8 banks x 16 bits | 8M x 8 banks x 16 bits | 8M x 8 banks x 16 bits | 8M x 8 banks x 16 bits | x16 (DDR2 SDRAM) |
| Speed Grade (Data Rate) | DDR2-667 (667 Mbps) | DDR2-800 (800 Mbps) | DDR2-1066 (1066 Mbps) | DDR2-1066 (1066 Mbps) | DDR2-800 (800 Mbps) | DDR2-533 (533 Mbps) | DDR2-800 (800 Mbps) |
| Supply Voltage (VDD/VDDQ) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| Temperature Grade | Commercial (0C to +85C TCASE) | Commercial (0C to +85C TCASE) | Commercial (0C to +85C TCASE) | Industrial (-40C to +95C TCASE) | Industrial (-40C to +95C TCASE) | Commercial (0C to +85C TCASE) | Commercial (per HGCHIPS) |
أبرز الفروقات
- Mid-range speed grade balances cost and bandwidth (مقابلW971GG6NB-18)
- Winbond-sourced production with renewable-energy variant available (مقابلHGD201G16W08)
- Identical footprint to faster and slower grades (مقابلW971GG6NB-25)
ملاحظات التصميم
Follow JEDEC DDR2 PCB layout guidelines: route DQ and DQS as 50 ohm single-ended impedance (85 ohm differential for DQS pairs), match DQS to CK within +/-25 ps at the DDR2-667 data rate, and keep via stubs short to minimize reflections. Provide a continuous ground reference plane under the TFBGA escape region and use microstrip or stripline topology consistently. Place 0.1 uF decoupling capacitors adjacent to every 4-6 balls, plus one bulk 10 uF ceramic per chip.
The W971GG6NB-6 draws its 1.8 V VDD and VDDQ from a common low-noise LDO or DC-DC regulator. According to the Winbond datasheet, VDDQ noise tolerance is tighter than VDD due to the SSTL_18 interface; place a ferrite bead between VDD and VDDQ if the PCB plane splits them. Estimate active read current at approximately 100-150 mA at DDR2-667 typical activity rates; size the 1.8 V rail for at least 200 mA per chip to handle burst refresh peaks.
Do not mix -6 (DDR2-667) and -25 (DDR2-800) grade parts on the same bus unless the controller supports both speed grades via mode register configuration. According to the Winbond datasheet, MR settings for CAS latency differ between speed grades and must match the slowest device on the bus. Forgetting this causes intermittent read errors at higher temperatures. Also verify ZQ calibration resistor (240 ohm 1%) is placed close to the ZQ ball for proper output impedance calibration.
Dynamic ODT is enabled by default on W971GG6NB-6 and should be left enabled for production designs. According to the Winbond datasheet, dynamic ODT changes termination strength during writes vs reads to improve signal integrity on long DQ traces. Disable dynamic ODT only if bench characterization on your specific PCB shows overshoot or undershoot issues. Also enable write leveling in the host controller to compensate for fly-by topology on multi-rank DDR2 designs.
معلومات الامتثال
RoHS and Halogen-Free compliance confirmed by the Winbond product catalog page for the W971GG6NB family. AEC-Q100 not applicable (memory IC, not automotive-grade qualification). Industrial-grade variants (suffix I/J) are not AEC-Q100 qualified either - Winbond DDR2 parts target consumer and industrial markets.
