MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron
MPN: MT41K256M16HA-125 ✓ نشط| الكمية | سعر الوحدة | الإجمالي |
|---|---|---|
| 1 | $10.9091 | $10.91 |
| 10 | $7.8788 | $78.79 |
| 100 | $6.9697 | $696.97 |
| 500 | $6.6667 | $3,333.35 |
| 1,000 | $6.3636 | $6,363.60 |
MT41K256M16HA-125 نظرة عامة
DDR3L SDRAM is a low-voltage variant of DDR3 memory, designed to operate at 1.35V instead of the standard 1.5V, reducing power consumption by up to 20% while maintaining compatibility with DDR3L-enabled controllers. It is part of the broader DRAM family, which includes DDR3, DDR4, and LPDDR variants, each optimized for different performance and power requirements. DDR3L is widely used in mobile devices, laptops, and industrial applications where energy efficiency is critical.
Key features of the MT41K256M16HA-125 include a 4Gbit density, 16-bit data bus, and a 13.75 ns access time (tRCD). It supports on-die termination (ODT) and dynamic ODT for improved signal integrity, and includes programmable CAS latency and additive latency for flexible timing. The device is RoHS compliant and lead-free, meeting environmental standards for modern electronics.
Technically, the MT41K256M16HA-125 utilizes a CMOS process and features a 1.35V core supply with a separate 1.35V I/O supply. It supports auto-refresh and self-refresh modes, with a refresh interval of 7.8 us at 85C. The device includes a temperature sensor for thermal management, enabling efficient operation in high-temperature environments. The FBGA package provides excellent thermal and electrical performance, with a thermal resistance of .
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial PCs. Its low voltage and high density make it ideal for power-sensitive designs, while the 800 MHz speed supports bandwidth-intensive tasks such as video processing and data analytics.
When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the layout guidelines in the Micron datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and careful termination of the address and control lines.
بدائل مباشرة لـ MT41K256M16HA-125 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع MT41K256M16HA-125 (نفس عامل الشكل والبصمة) — يختلف في Package, CAS Latency, Burst Length, Data Rate, Supply Voltage.
أداة المقارنة السريعة — اختر قطعًا بديلة للمقارنة جنبًا إلى جنب:
K4B4G1646E-BYMA
✗ غير متوفر
$14.3182 / وحدة
عرض ورقة البيانات ←MT41K256M16HA-125IT:E
✓ متوفر في المخزون
$4.5 / وحدة
عرض ورقة البيانات ←MT41K256M16HA-125M
📋 بديل مرجعي (غير موجود في الكتالوج)
MT41K256M16HA-125V
📋 بديل مرجعي (غير موجود في الكتالوج)
MT41K256M16TW-107AIT:P
📋 بديل مرجعي (غير موجود في الكتالوج)
H5TQ4G63AFR-PBA
📋 بديل مرجعي (غير موجود في الكتالوج)
MT41K256M16HA-125 الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | SDRAM - DDR3L |
| حجم الذاكرة | 4Gbit (256M x 16) |
| عرض ناقل البيانات | 16 bit |
| Clock Frequency | 800 MHz |
| Access Time | 13.75 ns |
| جهد التغذية | 1.35 V |
| العلبة | 96-FBGA (9x14 mm) |
| عدد الدبابيس | 96 |
| نوع التركيب | Surface Mount |
| حالة RoHS | Compliant |
| Lead-Free | Yes |
| Logic Family | CMOS |
| Refresh Interval | 7.8 us at 85C |
| زمن الوصول CAS | 11 |
تكوين أطراف MT41K256M16HA-125
| دبوس A1 | VDD — Power supply (1.35V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ2 — Data input/output 2 |
| دبوس B3 | DQ3 — Data input/output 3 |
| دبوس C1 | VDDQ — I/O power supply (1.35V) |
| دبوس C2 | DQ4 — Data input/output 4 |
| دبوس C3 | DQ5 — Data input/output 5 |
| دبوس D1 | VSSQ — I/O ground |
| دبوس D2 | DQ6 — Data input/output 6 |
| دبوس D3 | DQ7 — Data input/output 7 |
| دبوس E1 | A0 — Address input 0 |
| دبوس E2 | A1 — Address input 1 |
| دبوس E3 | A2 — Address input 2 |
| دبوس F1 | A3 — Address input 3 |
| دبوس F2 | A4 — Address input 4 |
| دبوس F3 | A5 — Address input 5 |
| دبوس G1 | A6 — Address input 6 |
| دبوس G2 | A7 — Address input 7 |
| دبوس G3 | A8 — Address input 8 |
| دبوس H1 | A9 — Address input 9 |
| دبوس H2 | A10 — Address input 10 |
| دبوس H3 | A11 — Address input 11 |
| دبوس J1 | A12 — Address input 12 |
| دبوس J2 | BA0 — Bank address 0 |
| دبوس J3 | BA1 — Bank address 1 |
| دبوس K1 | BA2 — Bank address 2 |
| دبوس K2 | RAS# — Row address strobe |
| دبوس K3 | CAS# — Column address strobe |
| دبوس L1 | WE# — Write enable |
| دبوس L2 | CS# — Chip select |
| دبوس L3 | CKE — Clock enable |
| دبوس M1 | CK — Clock (positive) |
| دبوس M2 | CK# — Clock (negative) |
| دبوس M3 | ODT — On-die termination |
| دبوس N1 | RESET# — Reset |
| دبوس N2 | VREF — Reference voltage |
| دبوس N3 | VDD — Power supply (1.35V) |
التطبيقات النموذجية
MT41K256M16HA-125 مناسب لـ 6 التطبيقs: Laptop Memory Modules, Embedded Systems, Networking Equipment, Industrial PCs, Consumer Electronics, Automotive Infotainment.
Laptop Memory Modules
The MT41K256M16HA-125 is ideal for DDR3L SO-DIMM modules used in laptops and ultrabooks. Its 1.35V operation reduces power consumption, extending battery life. With 800 MHz speed and 4Gbit density, it provides sufficient bandwidth for multitasking and multimedia applications. The 96-ball FBGA package enables compact module designs, and the low voltage aligns with energy-efficient computing standards.
موصى به
Embedded Systems
In embedded systems, the MT41K256M16HA-125 provides high-density, low-power memory for industrial controllers, medical devices, and IoT gateways. Its 1.35V supply and 800 MHz speed support real-time data processing and logging. The FBGA package is suitable for space-constrained PCBs, and the device's reliability ensures long-term operation in harsh environments. The 16-bit bus simplifies interfacing with 32-bit microcontrollers.
موصى به
Networking Equipment
The MT41K256M16HA-125 is used in routers, switches, and network appliances for packet buffering and routing tables. Its 800 MHz speed and 4Gbit capacity handle high-throughput data streams, while 1.35V operation reduces heat generation in dense networking hardware. The device's on-die termination improves signal integrity for high-speed interfaces, ensuring reliable data transmission in demanding network environments.
موصى به
Industrial PCs
Industrial PCs require robust memory for process control, HMI, and data acquisition. The MT41K256M16HA-125 offers 4Gbit density and 800 MHz speed, supporting demanding applications. Its 1.35V operation reduces power and heat, enhancing system reliability. The FBGA package withstands vibration and temperature variations, making it suitable for factory automation and test equipment.
موصى به
Consumer Electronics
In consumer electronics like smart TVs, set-top boxes, and gaming consoles, the MT41K256M16HA-125 provides high-speed memory for video processing and user interfaces. Its 800 MHz speed ensures smooth playback, while 1.35V operation reduces energy consumption. The compact FBGA package fits slim device designs, and the device's low power helps meet energy efficiency regulations.
موصى به
Automotive Infotainment
The MT41K256M16HA-125 is used in automotive infotainment systems for navigation, audio, and display control. Its 1.35V operation reduces heat in the cabin, and the 800 MHz speed supports real-time graphics. The FBGA package is AEC-Q100 qualified (for the IT version), ensuring reliability in automotive temperature ranges. The device's low power consumption is critical for battery management.
موصى به
بيانات مرجعية هندسية لـ MT41K256M16HA-125 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | MT41K256M16HA-125IT | MT41K256M16HA-125M | MT41K256M16HA-125V | MT41K256M16TW-107AIT | K4B4G1646E-BYMA | H5TQ4G63AFR-PBA |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | P: 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) |
| Brand | Micron Technology Inc. | Micron Technology Inc. | Micron Technology Inc. | Micron Technology Inc. | P: Micron Technology Inc. | Samsung Electronics | SK Hynix |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit | P: 4Gbit | 4Gbit | 4Gbit |
| Data Bus Width | 16 bit | 16 bit | 16 bit | 16 bit | P: 16 bit | 16 bit | 16 bit |
| Clock Frequency | 800 MHz | 800 MHz | 800 MHz | 800 MHz | P: 533 MHz | 800 MHz | 800 MHz |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | P: 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0C to 95C | -40C to 95C | 0C to 95C | 0C to 95C | P: -40C to 95C | 0C to 95C | 0C to 95C |
| Access Time | 13.75 ns | 13.75 ns | 13.75 ns | 13.75 ns | P: 15 ns | 13.75 ns | 13.75 ns |
أبرز الفروقات
- Low voltage operation at 1.35V (مقابلMT41K256M16TW-107AIT:P)
- Higher clock speed of 800 MHz (مقابلMT41K256M16TW-107AIT:P)
- Industrial temperature grade option (مقابلMT41K256M16HA-125)
ملاحظات التصميم
The MT41K256M16HA-125 requires a stable 1.35V supply for both VDD and VDDQ. Use low-ESR ceramic capacitors (0.1uF and 1uF) placed close to each power pin to decouple high-frequency noise. A bulk capacitor (10uF) should be placed near the device to handle transient currents during refresh and burst operations.
Follow the layout guidelines in the Micron datasheet for DDR3L routing. Keep the data, address, and control lines matched in length to minimize skew. Use a solid ground plane and provide proper termination for the clock and address lines. The FBGA package requires a 0.8mm ball pitch, so ensure the PCB pad size and solder mask are designed accordingly.
The device supports on-die termination (ODT) to improve signal integrity. Configure the ODT settings in the memory controller to match the system's impedance. Use simulation tools to verify signal integrity at 800 MHz, especially for long traces. Add series termination resistors (22-33 ohm) on the data lines if needed.
معلومات الامتثال
RoHS compliant and lead-free per DigiKey product page. AEC-Q100 qualification not specified for standard version; the IT version may be automotive qualified.
