NRVBS260T3G-VF01 - 60V 2A SMB Schottky Rectifier | onsemi
MPN: NRVBS260T3G-VF01 ✓ সক্রিয়NRVBS260T3G-VF01 সারাংশ
A Schottky barrier rectifier is a unipolar device that uses a metal-to-silicon junction rather than a PN junction. This construction eliminates minority carrier storage, which yields an ultra-low forward voltage drop (typically 0.5-0.7 V at moderate current) and extremely fast reverse recovery. The trade-off is higher leakage current and a lower reverse-voltage ceiling than PN-junction rectifiers, which is why 60 V-class Schottkys like the NRVBS260T3G dominate low-voltage, high-frequency power stages.
Key features include 60 V peak repetitive reverse voltage (VRRM = VRWM = VR), 2 A average rectified forward current at the rated VR, epitaxial construction with oxide passivation, metal overlay contact for low resistance, and a guard ring for transient protection. The SMB footprint supports compact PCB layouts and is compatible with standard SMD pick-and-place processes.
The NRVBS260T3G-VF01 uses an onsemi Schottky die designed for repetitive switching duty. Its low thermal resistance SMB package and 0.63 V max VF at 2 A minimize conduction losses, while the absence of reverse recovery charge eliminates switching loss in high-frequency freewheeling and OR-ing applications. This combination is why the part is a long-time workhorse in 12 V/24 V automotive and industrial power conversion.
Typical applications include low-voltage, high-frequency switching power supplies as output rectifiers; freewheeling diodes across inductive loads such as relay coils, motor windings, and solenoids; polarity-protection diodes at DC inputs; and OR-ing diodes in redundant power architectures. The 2 A current rating suits distributed 5 V and 12 V rails, while the 60 V standoff provides ample margin above 24 V industrial buses.
When designing with this part, place a Schottky in close proximity to the switching node to minimize the reverse-recovery loop. Parallel devices require careful thermal balancing, and the SMB package dissipates roughly 0.5 W per diode at 2 A continuous without a copper pour.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the onsemi datasheet alone.
এর জন্য ড্রপ-ইন বিকল্প NRVBS260T3G-VF01 — একই package, pin-to-pin compatible। ভিন্ন package-এর যেসব পার্টে PCB rework প্রয়োজন সেগুলো বাদ দেওয়া হয়েছে।
এই সিরিজের ভ্যারিয়েন্ট
একই সিরিজের মডেল যেগুলো drop-in compatible NRVBS260T3G-VF01 (একই form factor এবং footprint) — পার্থক্য রয়েছে Diode Type, Construction, Package, MSL Level.
NRVBS260T3G
✅ ড্রপ-ইনমূল্যের জন্য যোগাযোগ করুন
ডেটাশিট দেখুন →MBRS260T3G
✅ ড্রপ-ইনমূল্যের জন্য যোগাযোগ করুন
ডেটাশিট দেখুন →SS26
✅ ড্রপ-ইন📋 রেফারেন্স বিকল্প (ক্যাটালগে নেই)
B260
✅ ড্রপ-ইন📋 রেফারেন্স বিকল্প (ক্যাটালগে নেই)
UPS260
✅ ড্রপ-ইন📋 রেফারেন্স বিকল্প (ক্যাটালগে নেই)
NRVBS260T3G-VF01 সর্বোচ্চ রেটিং ও বৈদ্যুতিক বৈশিষ্ট্য
| Manufacturer | onsemi |
| Part Series | NRVBS260 |
| Diode Type | Schottky Barrier Rectifier |
| Configuration | Single |
| Peak Repetitive Reverse Voltage (VRRM) | 60 V |
| Working Peak Reverse Voltage (VRWM) | 60 V |
| DC Blocking Voltage (VR) | 60 V |
| Average Rectified Forward Current (IO) | 2 A (at rated VR) |
| Maximum Forward Voltage (VF) | 0.63 V (at 2 A) |
| প্যাকেজ | SMB (DO-214AA) |
| মাউন্টিং টাইপ | Surface Mount |
| অপারেটিং তাপমাত্রার পরিসর | -55 C to +125 C |
| Lead-Free / RoHS | Pb-Free, RoHS Compliant |
| Construction | Epitaxial with oxide passivation and metal overlay |
| Tape and Reel Quantity | 2,500 pcs (per -VF01 suffix) |
| Automotive Qualified | Yes (NRVBS series) |
NRVBS260T3G-VF01 পিন কনফিগারেশন
| পিন 1 | Cathode (K) — Cathode terminal (marked with band on SMB package) |
| পিন 2 | Anode (A) — Anode terminal |
সাধারণ ব্যবহার
NRVBS260T3G-VF01 এর জন্য উপযুক্ত 7 অ্যাপ্লিকেশনs: Low-Voltage High-Frequency Switching Power Supply Output Rectifier, Freewheeling Diode Across Inductive Loads, Polarity Protection Diode at DC Input, OR-ing Diode in Redundant Power Architectures, Automotive 12 V / 24 V Bus Rectifier, Solar Panel Blocking Diode, USB / DC Connector Reverse-Current Block.
Low-Voltage High-Frequency Switching Power Supply Output Rectifier
The NRVBS260T3G-VF01 is well suited as the secondary-side output rectifier in 12 V and 24 V switching power supplies because its 60 V VRRM provides 2x headroom above 24 V rails, while the 0.63 V max VF at 2 A minimizes conduction loss. The absence of reverse-recovery charge eliminates switching loss at high converter frequencies (>=200 kHz), improving overall efficiency by 1-3% compared to PN-junction rectifiers. Place the diode in close proximity to the transformer/inductor secondary to minimize the reverse-recovery loop inductance.
সুপারিশকৃত
Freewheeling Diode Across Inductive Loads
Use the NRVBS260T3G-VF01 as a freewheeling diode across relay coils, solenoids, motor windings, and small inductors in 12 V/24 V systems. The lack of reverse-recovery charge means the diode commutates cleanly when the switch opens, eliminating the high-voltage spike and EMI associated with PN-junction rectifiers. The 60 V reverse rating easily clamps the inductive kick of a 24 V coil, and the 2 A continuous rating handles inrush during contact closure.
সুপারিশকৃত
Polarity Protection Diode at DC Input
Place the NRVBS260T3G-VF01 in series with the input of a 12 V or 24 V DC supply to protect downstream circuitry from reverse-battery or mis-wired connections. The 0.63 V forward drop at 2 A is acceptable in most 12 V systems (only ~5% loss at full load), and the 60 V VRRM easily survives load-dump transients up to 40 V typical in automotive environments. The SMB package handles the inrush current of bulk input capacitors on hot-plug events.
সুপারিশকৃত
OR-ing Diode in Redundant Power Architectures
The NRVBS260T3G-VF01 enables low-loss OR-ing between two redundant 12 V or 24 V supplies in telecom, server, and industrial redundancy applications. The 0.63 V forward drop at 2 A is far lower than an ideal-diode MOSFET solution at this current level, and the lack of reverse recovery prevents cross-conduction between sources when one rail collapses. The 60 V reverse rating tolerates transient differences between supplies.
সুপারিশকৃত
Automotive 12 V / 24 V Bus Rectifier
The NRVBS prefix indicates automotive qualification, making the NRVBS260T3G-VF01 ideal for body-electronics, lighting, and accessory modules operating directly off the 12 V automotive bus. Its 60 V reverse rating easily clamps load-dump transients per ISO 7637-2, while the 2 A rating handles accessory current loads up to ~1.5 A continuous with proper thermal management. The Pb-free SMB package meets automotive reflow and reliability requirements.
সুপারিশকৃত
Solar Panel Blocking Diode
Use the NRVBS260T3G-VF01 as a low-loss blocking diode in small 12 V solar battery-charging panels to prevent reverse current flow from the battery back into the panel at night. Its 0.63 V forward drop is far lower than a silicon rectifier, preserving charging efficiency at low panel voltages, and its 60 V reverse rating tolerates open-circuit panel voltage on cold days. The 2 A rating matches typical small-panel short-circuit current.
সুপারিশকৃত
USB / DC Connector Reverse-Current Block
Place the NRVBS260T3G-VF01 in series with a USB VBUS or DC barrel-jack rail to prevent reverse-current backfeeding when a device is plugged into two powered sources simultaneously. The 0.63 V drop is acceptable at 5 V/2 A USB levels (4.4% loss), and the SMB package fits in tight connector bays. The 60 V reverse rating provides ample margin for hot-plug transients.
সুপারিশকৃত
সুপারিশকৃত পণ্যের সারসংক্ষেপ
এর জন্য ইঞ্জিনিয়ারিং রেফারেন্স ডেটা NRVBS260T3G-VF01 — তুলনা, ডিজাইন গাইডেন্স এবং কমপ্লায়েন্স তথ্য।
নির্বাচন গাইড
বিকল্পের সাথে তুলনা
| পারামিটার | এই পণ্য | NRVBS260T3G | MBRS260T3G | SS26 | B260 | UPS260 |
|---|---|---|---|---|---|---|
| Package | SMB (DO-214AA) | SMB (DO-214AA) - same | SMB (DO-214AA) - same | SMB (DO-214AA) - same | SMB (DO-214AA) - same | SMB (DO-214AA) - same |
| Brand | onsemi | onsemi | onsemi | Vishay Intertechnology | Diodes Incorporated | Microsemi |
| Peak Repetitive Reverse Voltage (VRRM) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Average Rectified Forward Current (IO) | 2 A | 2 A | 2 A | 2 A | 2 A | 2 A |
| Maximum Forward Voltage (VF) at IO | 0.63 V at 2 A | 0.63 V at 2 A | 0.63 V at 2 A | 0.7 V at 2 A | 0.7 V at 2 A | 0.7 V at 2 A |
| Diode Type | Schottky | Schottky | Schottky | Schottky | Schottky | Schottky |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Yes | Yes | Yes | Yes | Yes | Yes |
মূল পার্থক্যসমূহ
- Automotive-qualified NRVBS prefix with same electrical ratings as commercial MBRS part (বনামMBRS260T3G)
- Lower forward voltage at full 2A load (বনামSS26 / B260)
- 2,500-piece tape-and-reel packaging matches -VF01 production ordering (বনামStandard NRVBS260T3G reel)
ডিজাইন নোট
At 2 A continuous forward current with VF = 0.63 V, the NRVBS260T3G-VF01 dissipates approximately 1.26 W of conduction loss. The SMB package has a typical thermal resistance of ~17 C/W junction-to-ambient on a 1 sq inch copper pad, producing an estimated ~21 C junction temperature rise above ambient. Estimated: P_D = VF x IO = 0.63 V x 2 A = 1.26 W; dT_J = 1.26 W x 17 C/W ~ 21 C. Provide adequate copper pour or thermal vias to keep the junction below 125 C at maximum rated ambient.
Place the Schottky as close as physically possible to the switching node (transformer secondary winding, inductor, or relay coil) to minimize the reverse-recovery loop inductance. Long traces between the diode and the switching element create voltage ringing that can exceed the 60 V VRRM rating and damage the part. Keep the diode footprint on a solid copper pour for thermal management and use short, wide traces for the high-current path.
Do not parallel multiple NRVBS260T3G-VF01 devices without ballast resistors or derating - Schottky diodes have positive temperature coefficient on forward voltage, which can lead to thermal runaway if one device hogs current. Do not exceed the 60 V reverse rating, including transient spikes from inductive loads; a TVS or snubber may be required in 24 V systems with long wire harnesses. Always verify the diode's reverse leakage at hot temperatures - Schottky leakage roughly doubles every 10 C, which can affect high-impedance circuits.
Use a standard SMB (DO-214AA) land pattern with the cathode pad marked clearly on the silkscreen. The recommended footprint per onsemi is approximately 2.5 mm x 2.0 mm pads with 1.0 mm gap, matching IPC-7352 nominal. Reflow profile should follow JEDEC J-STD-020 with peak temperature of 260 C for Pb-free assembly. The -VF01 suffix denotes 2,500-piece tape-and-reel packaging per EIA-481.
কমপ্লায়েন্স তথ্য
Pb-Free and RoHS compliant per onsemi datasheet. NRVBS prefix denotes automotive-grade (AEC-Q100) qualification per onsemi product family designation. Halogen-free status not explicitly stated in the provided datasheet excerpt - marked unknown.