NRVBS260T3G-VF01 - 60V 2A SMB Schottky Rectifier | onsemi
MPN: NRVBS260T3G-VF01 ✓ فعالNRVBS260T3G-VF01 جائزہ
A Schottky barrier rectifier is a unipolar device that uses a metal-to-silicon junction rather than a PN junction. This construction eliminates minority carrier storage, which yields an ultra-low forward voltage drop (typically 0.5-0.7 V at moderate current) and extremely fast reverse recovery. The trade-off is higher leakage current and a lower reverse-voltage ceiling than PN-junction rectifiers, which is why 60 V-class Schottkys like the NRVBS260T3G dominate low-voltage, high-frequency power stages.
Key features include 60 V peak repetitive reverse voltage (VRRM = VRWM = VR), 2 A average rectified forward current at the rated VR, epitaxial construction with oxide passivation, metal overlay contact for low resistance, and a guard ring for transient protection. The SMB footprint supports compact PCB layouts and is compatible with standard SMD pick-and-place processes.
The NRVBS260T3G-VF01 uses an onsemi Schottky die designed for repetitive switching duty. Its low thermal resistance SMB package and 0.63 V max VF at 2 A minimize conduction losses, while the absence of reverse recovery charge eliminates switching loss in high-frequency freewheeling and OR-ing applications. This combination is why the part is a long-time workhorse in 12 V/24 V automotive and industrial power conversion.
Typical applications include low-voltage, high-frequency switching power supplies as output rectifiers; freewheeling diodes across inductive loads such as relay coils, motor windings, and solenoids; polarity-protection diodes at DC inputs; and OR-ing diodes in redundant power architectures. The 2 A current rating suits distributed 5 V and 12 V rails, while the 60 V standoff provides ample margin above 24 V industrial buses.
When designing with this part, place a Schottky in close proximity to the switching node to minimize the reverse-recovery loop. Parallel devices require careful thermal balancing, and the SMB package dissipates roughly 0.5 W per diode at 2 A continuous without a copper pour.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the onsemi datasheet alone.
کے لیے ڈراپ اِن متبادل NRVBS260T3G-VF01 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں NRVBS260T3G-VF01 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Diode Type, Construction, Package, MSL Level.
NRVBS260T3G
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MBRS260T3G
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →SS26
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
B260
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
UPS260
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
NRVBS260T3G-VF01 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | onsemi |
| Part Series | NRVBS260 |
| Diode Type | Schottky Barrier Rectifier |
| Configuration | Single |
| Peak Repetitive Reverse Voltage (VRRM) | 60 V |
| Working Peak Reverse Voltage (VRWM) | 60 V |
| DC Blocking Voltage (VR) | 60 V |
| Average Rectified Forward Current (IO) | 2 A (at rated VR) |
| Maximum Forward Voltage (VF) | 0.63 V (at 2 A) |
| پیکیج | SMB (DO-214AA) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ درجہ حرارت رینج | -55 C to +125 C |
| Lead-Free / RoHS | Pb-Free, RoHS Compliant |
| Construction | Epitaxial with oxide passivation and metal overlay |
| Tape and Reel Quantity | 2,500 pcs (per -VF01 suffix) |
| Automotive Qualified | Yes (NRVBS series) |
NRVBS260T3G-VF01 پن کنفیگریشن
| پن 1 | Cathode (K) — Cathode terminal (marked with band on SMB package) |
| پن 2 | Anode (A) — Anode terminal |
عام استعمالات
NRVBS260T3G-VF01 کے لیے موزوں ہے 7 ایپلیکیشنs: Low-Voltage High-Frequency Switching Power Supply Output Rectifier, Freewheeling Diode Across Inductive Loads, Polarity Protection Diode at DC Input, OR-ing Diode in Redundant Power Architectures, Automotive 12 V / 24 V Bus Rectifier, Solar Panel Blocking Diode, USB / DC Connector Reverse-Current Block.
Low-Voltage High-Frequency Switching Power Supply Output Rectifier
The NRVBS260T3G-VF01 is well suited as the secondary-side output rectifier in 12 V and 24 V switching power supplies because its 60 V VRRM provides 2x headroom above 24 V rails, while the 0.63 V max VF at 2 A minimizes conduction loss. The absence of reverse-recovery charge eliminates switching loss at high converter frequencies (>=200 kHz), improving overall efficiency by 1-3% compared to PN-junction rectifiers. Place the diode in close proximity to the transformer/inductor secondary to minimize the reverse-recovery loop inductance.
تجویز کردہ
Freewheeling Diode Across Inductive Loads
Use the NRVBS260T3G-VF01 as a freewheeling diode across relay coils, solenoids, motor windings, and small inductors in 12 V/24 V systems. The lack of reverse-recovery charge means the diode commutates cleanly when the switch opens, eliminating the high-voltage spike and EMI associated with PN-junction rectifiers. The 60 V reverse rating easily clamps the inductive kick of a 24 V coil, and the 2 A continuous rating handles inrush during contact closure.
تجویز کردہ
Polarity Protection Diode at DC Input
Place the NRVBS260T3G-VF01 in series with the input of a 12 V or 24 V DC supply to protect downstream circuitry from reverse-battery or mis-wired connections. The 0.63 V forward drop at 2 A is acceptable in most 12 V systems (only ~5% loss at full load), and the 60 V VRRM easily survives load-dump transients up to 40 V typical in automotive environments. The SMB package handles the inrush current of bulk input capacitors on hot-plug events.
تجویز کردہ
OR-ing Diode in Redundant Power Architectures
The NRVBS260T3G-VF01 enables low-loss OR-ing between two redundant 12 V or 24 V supplies in telecom, server, and industrial redundancy applications. The 0.63 V forward drop at 2 A is far lower than an ideal-diode MOSFET solution at this current level, and the lack of reverse recovery prevents cross-conduction between sources when one rail collapses. The 60 V reverse rating tolerates transient differences between supplies.
تجویز کردہ
Automotive 12 V / 24 V Bus Rectifier
The NRVBS prefix indicates automotive qualification, making the NRVBS260T3G-VF01 ideal for body-electronics, lighting, and accessory modules operating directly off the 12 V automotive bus. Its 60 V reverse rating easily clamps load-dump transients per ISO 7637-2, while the 2 A rating handles accessory current loads up to ~1.5 A continuous with proper thermal management. The Pb-free SMB package meets automotive reflow and reliability requirements.
تجویز کردہ
Solar Panel Blocking Diode
Use the NRVBS260T3G-VF01 as a low-loss blocking diode in small 12 V solar battery-charging panels to prevent reverse current flow from the battery back into the panel at night. Its 0.63 V forward drop is far lower than a silicon rectifier, preserving charging efficiency at low panel voltages, and its 60 V reverse rating tolerates open-circuit panel voltage on cold days. The 2 A rating matches typical small-panel short-circuit current.
تجویز کردہ
USB / DC Connector Reverse-Current Block
Place the NRVBS260T3G-VF01 in series with a USB VBUS or DC barrel-jack rail to prevent reverse-current backfeeding when a device is plugged into two powered sources simultaneously. The 0.63 V drop is acceptable at 5 V/2 A USB levels (4.4% loss), and the SMB package fits in tight connector bays. The 60 V reverse rating provides ample margin for hot-plug transients.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا NRVBS260T3G-VF01 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | NRVBS260T3G | MBRS260T3G | SS26 | B260 | UPS260 |
|---|---|---|---|---|---|---|
| Package | SMB (DO-214AA) | SMB (DO-214AA) - same | SMB (DO-214AA) - same | SMB (DO-214AA) - same | SMB (DO-214AA) - same | SMB (DO-214AA) - same |
| Brand | onsemi | onsemi | onsemi | Vishay Intertechnology | Diodes Incorporated | Microsemi |
| Peak Repetitive Reverse Voltage (VRRM) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Average Rectified Forward Current (IO) | 2 A | 2 A | 2 A | 2 A | 2 A | 2 A |
| Maximum Forward Voltage (VF) at IO | 0.63 V at 2 A | 0.63 V at 2 A | 0.63 V at 2 A | 0.7 V at 2 A | 0.7 V at 2 A | 0.7 V at 2 A |
| Diode Type | Schottky | Schottky | Schottky | Schottky | Schottky | Schottky |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Yes | Yes | Yes | Yes | Yes | Yes |
اہم امتیازی خصوصیات
- Automotive-qualified NRVBS prefix with same electrical ratings as commercial MBRS part (بمقابلہMBRS260T3G)
- Lower forward voltage at full 2A load (بمقابلہSS26 / B260)
- 2,500-piece tape-and-reel packaging matches -VF01 production ordering (بمقابلہStandard NRVBS260T3G reel)
ڈیزائن نوٹس
At 2 A continuous forward current with VF = 0.63 V, the NRVBS260T3G-VF01 dissipates approximately 1.26 W of conduction loss. The SMB package has a typical thermal resistance of ~17 C/W junction-to-ambient on a 1 sq inch copper pad, producing an estimated ~21 C junction temperature rise above ambient. Estimated: P_D = VF x IO = 0.63 V x 2 A = 1.26 W; dT_J = 1.26 W x 17 C/W ~ 21 C. Provide adequate copper pour or thermal vias to keep the junction below 125 C at maximum rated ambient.
Place the Schottky as close as physically possible to the switching node (transformer secondary winding, inductor, or relay coil) to minimize the reverse-recovery loop inductance. Long traces between the diode and the switching element create voltage ringing that can exceed the 60 V VRRM rating and damage the part. Keep the diode footprint on a solid copper pour for thermal management and use short, wide traces for the high-current path.
Do not parallel multiple NRVBS260T3G-VF01 devices without ballast resistors or derating - Schottky diodes have positive temperature coefficient on forward voltage, which can lead to thermal runaway if one device hogs current. Do not exceed the 60 V reverse rating, including transient spikes from inductive loads; a TVS or snubber may be required in 24 V systems with long wire harnesses. Always verify the diode's reverse leakage at hot temperatures - Schottky leakage roughly doubles every 10 C, which can affect high-impedance circuits.
Use a standard SMB (DO-214AA) land pattern with the cathode pad marked clearly on the silkscreen. The recommended footprint per onsemi is approximately 2.5 mm x 2.0 mm pads with 1.0 mm gap, matching IPC-7352 nominal. Reflow profile should follow JEDEC J-STD-020 with peak temperature of 260 C for Pb-free assembly. The -VF01 suffix denotes 2,500-piece tape-and-reel packaging per EIA-481.
تعمیل کی معلومات
Pb-Free and RoHS compliant per onsemi datasheet. NRVBS prefix denotes automotive-grade (AEC-Q100) qualification per onsemi product family designation. Halogen-free status not explicitly stated in the provided datasheet excerpt - marked unknown.