DDR5

K4RHE086VP

K4RHE086VP - Samsung 24Gb DDR5 DRAM | Samsung Electronics

The Samsung Electronics K4RHE086VP is a 24-gigabit DDR5 SDRAM component organized as x8, fabricated on Samsung's 1a-class (D1a) DRAM process node and packaged in a standard FBGA surface-mount package for server, client, and mobile memory subsystems. DDR5 SDRAM is the fifth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology in computing hierarchies. It sits within the DRAM family alongside DDR4, DDR3, LPDDR4/5, and HBM, and functions as the primary working memory between the CPU and storage. DDR5 doubles the bank count per bank group versus DDR4, moves power management onto the module via a PMIC, and introduces on-die ECC to improve reliability at higher densities. Key features of the K4RHE086VP include its 24 Gb density, which enables higher memory capacity per chip and reduces component count on high-capacity DIMMs; the x8 organization, which suits server RDIMMs and embedded memory arrays; and Samsung's D1a process, which improves bit density and power efficiency versus earlier nodes. Samsung's DDR5 family supports the DDR5 interface standard with its associated speed bins for data rates in the multi-gigabit-per-second class (speed grade code [DATA_NEEDED: maximum data rate for this speed bin]). Architecturally, the device uses DDR5 core innovations including a 16n prefetch, dual 32-bit subchannel-capable DIMM topologies, on-die ECC (ODDE), and decision-feedback equalization (DFE) on the data path to sustain signal integrity at high data rates. Bank-group architecture shortens effective access latency and raises sustainable bandwidth for multi-core server workloads. Typical applications include data-center RDIMM and LRDIMM modules for cloud servers, high-performance client and workstation DIMMs, AI/ML training and inference memory pools, and networking equipment requiring high bandwidth per watt. The 24 Gb density is particularly valuable in 64 GB+ module builds where minimizing IC count improves power and reliability. Design consideration: DDR5 termination and routing demand tighter impedance control than DDR4; follow the Samsung DDR5 design guide for fly-by command/address routing and reference-voltage planning, and always confirm the exact speed bin and operating temperature range on the official datasheet before finalizing a BOM. This page consolidates verified distributor listings, same-brand drop-in alternatives from the Samsung DDR5 portfolio, and practical sourcing guidance not found in the manufacturer datasheet.