H5CG34MEBDX030N - DDR5 16Gb SDRAM Component | SK hynix | Server Memory
MPN: H5CG34MEBDX030N ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.8 | $6.80 |
| 10 | $6.12 | $61.20 |
| 100 | $5.44 | $544.00 |
| 500 | $4.9 | $2,450.00 |
| 1,000 | $4.42 | $4,420.00 |
Drop-in alternatives for H5CG34MEBDX030N — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →H5CG34MEBDX030N Maximum Ratings & Electrical Characteristics
| Manufacturer | SK hynix |
| Product Type | DDR5 SDRAM Component |
| Density | 16 Gbit (2 GB) |
| Memory Series | H5CG3 series (B-die) |
| DRAM Process Node | 1b-nanometer-class |
| Supply Voltage VDD/VDDQ | 1.1 V |
| Wordline Boost Supply VPP | 1.8 V |
| Interface | DDR5 (JEDEC double data rate 5) |
| On-Die ECC | Yes (DDR5 ODECC) |
| Sub-Channel Architecture | Dual independent 32/40-bit sub-channels |
| Package Type | FBGA surface mount |
| ECC Feature | On-die ECC, no host overhead |
| Typical Application | Server RDIMM / LRDIMM components |
H5CG34MEBDX030N fbga surface mount Pin Configuration Guide
Complete pinout information for H5CG34MEBDX030N (fbga surface mount package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for H5CG34MEBDX030N.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H5CG34MEBDX030N is suitable for 6 applications: Server RDIMM Main Memory, AI and Big-Data Compute Nodes, Enterprise Storage Controllers, Cloud Hypervisor Memory, High-Performance Workstations, Networking and Telecom Equipment.
Server RDIMM Main Memory
The H5CG34MEBDX030N serves as the core DRAM component on DDR5 registered DIMMs for 1U/2U servers. Its 16Gbit density allows 64GB+ RDIMMs from 32 ICs in dual-rank layouts, while the 1.1V supply cuts memory subsystem power versus DDR4. The on-die ECC corrects internal single-bit errors without host RAS overhead, and the dual 32-bit sub-channels let a server CPU address two independent half-width channels per module, improving queue depth and effective bandwidth for virtualized workloads. Designers should follow DDR5 fly-by CA routing and pair the DRAM with a registered clock driver, SPD hub, and 12V-to-1.1V PMIC per the DDR5 RDIMM specification.
Recommended
AI and Big-Data Compute Nodes
AI training and inference servers demand maximum memory bandwidth per socket, and the H5CG34MEBDX030N addresses this with the DDR5 burst-32 architecture and dual sub-channels. SK hynix positions DDR5 as the technology enabling the AI and big-data era in server solutions, and this 1b-nm-class B-die provides the density (16Gbit per IC) needed to populate 12 or 16 DIMM slots at high capacity. In GPU host memory footprints, 16 populated DIMMs of 8-16 ICs each deliver terabyte-class host memory feeding data-hungry accelerators. Thermal design is critical: FBGA DRAMs at full bandwidth require module heatsinks and airflow above approximately 3-4 W per DIMM.
Recommended
Enterprise Storage Controllers
Enterprise SSD controllers and storage arrays use DDR5 DRAM for metadata caching, FTL mapping tables, and write coalescing buffers. The H5CG34MEBDX030N's 16Gbit density supports 2GB per IC, letting a controller host multi-gigabyte mapping tables for 60TB+ SSDs using compact x8 component populations. The 1.1V rail simplifies power-tree design alongside 3.3V/1.8V storage silicon, and ODECC improves mapping-table integrity against DRAM cell upsets - essential because a single corrupted FTL entry can destroy LBA mapping. Battery-backed or checkpointed write paths remain necessary since DDR5 is volatile regardless of ECC features.
Recommended
Cloud Hypervisor Memory
Cloud infrastructure running VM and container workloads benefits from the H5CG34MEBDX030N's high per-IC density and DDR5 reliability features. ODECC suppresses DRAM-internal single-bit faults, complementing module-level ECC handled by the memory controller over the 40-bit sub-channel with side-band signaling. Higher bandwidth per channel at 1.1V improves performance-per-watt, a primary cloud TCO metric when thousands of DIMMs operate continuously. When qualifying this MPN for hyperscale fleets, lock the exact die revision and SPD revision in your approved-vendor list since BIOS memory-training tables are validated per suffix, and alternate suffixes can alter margin at maximum data rate.
Recommended
High-Performance Workstations
Workstation UDIMMs for CAD, simulation, and content creation use 16Gbit DDR5 components like the H5CG34MEBDX030N to build 32-64GB unbuffered modules. The dual independent 32-bit sub-channels per module give desktop CPUs two low-latency memory channels per DIMM socket, improving real-time viewport performance over DDR4 UDIMMs. On client platforms the 1.1V supply and 1.8V VPP require a DDR5-compliant PMIC on-module (5V input), which differentiates DDR5 UDIMM design from DDR4. Consumer workstations rarely use ODECC reporting, but the feature silently improves stability during long renders and large assembly loads.
Recommended
Networking and Telecom Equipment
High-throughput switches, routers, and 5G baseband cards use DDR5 components as deep packet buffers and control-plane memory. The H5CG34MEBDX030N's sustained bandwidth and dual sub-channel structure serve lookup-table updates and queue management at line rate, while 1.1V operation reduces total board power in thermally constrained fanless designs. On-die ECC is valuable in always-on telecom hardware where silent DRAM upsets accumulate over years of uptime. Telecom designers should specify industrial temperature grades where required and validate refresh behavior (temp-compensated refresh) per the SK hynix device operation guide for extended ambient ranges.
Recommended
Recommended Products Summary
Engineering reference data for H5CG34MEBDX030N — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5CG34MEBDX030 | H5CG44MEBDX014N | H5CG44AGBDX018N |
|---|---|---|---|---|
| Package | FBGA | FBGA - same | FBGA - same | FBGA - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Memory Interface | DDR5 (JEDEC) | DDR5 | DDR5 | DDR5 |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| On-Die ECC | Yes | Yes | Yes | Yes |
| Die Family / Revision | H5CG3 (B-die) | H5CG3 (B-die) | H5CG4 (M-die class) | H5CG4A (A-die routing) |
| Speed Grade (suffix) | -030 [DATA_NEEDED] | same code, non-N flow | -014 | -018 |
Key Differentiators
- 1b-nanometer-class B-die process node (vs H5CG44MEBDX014N)
- RoHS newer-flow N suffix coding (vs H5CG34MEBDX030)
- Lower-speed-bin qualification risk vs A-die parts (vs H5CG44AGBDX018N)
Design Notes
DDR5 module PCBs must use the fly-by command/address topology with per-DRAM termination, and data lines routed as tightly length-matched groups per sub-channel. For x8 components like the H5CG34MEBDX030N, keep DQ/DQS trace skew within the controller spec (typically a few mils per inch matching targets in JEDEC module design guides). Use 1.1V power planes with dedicated VDDQ islands and abundant via stitching to minimize simultaneous-switching noise at peak data rates. Follow the DDR5 RDIMM/UDIMM reference routing guides from SK hynix and your register-clock-driver vendor.
DDR5 introduces an on-module PMIC converting 5V (or 12V on RDIMM) to 1.1V VDD/VDDQ and 1.8V VPP. Estimated: a 32-IC dual-rank module at roughly 0.4-0.7 W per DRAM at full bandwidth draws 13-22 W, so the PMIC must sustain multi-amp peak currents with fast load transients. Place bulk and 0.1uF ceramic decoupling at every DRAM power ball cluster; do not share the VPP rail with other 1.8V logic since VPP must remain clean for wordline boosting.
Never substitute across SK hynix speed-bin suffixes (-014/-018/-030) without re-running platform memory training: BIOS JEDEC manifests and training tables are validated per exact MPN and suffix, and mismatched suffixes can fail POST or reduce margin at max data rate. Also verify SPD hub contents match the actual DRAM configuration before module shipment - SPD/DRAM mismatch is the leading cause of field failures in custom module builds.
Compliance Information
N package-code suffix per SK hynix part-number coding denotes the RoHS-compliant newer package flow. Formal RoHS/REACH certificates should be requested from SK hynix for this exact MPN.
