1ED3127MU12FXUMA1 vs 1EDN7116GXTMA1 Comparison
Detailed side-by-side comparison of 1ED3127MU12FXUMA1 by Infineon and 1EDN7116GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 1ED3127MU12FXUMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Function | Single-channel isolated gate driver | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Number of Outputs | 1 | — |
| Output Configuration | High-side / Low-side, Inverting / Non-Inverting | — |
| Peak Output Current | 10 A (source/sink) | — |
| Continuous Output Current | 9 A | — |
| Supply Voltage (VCC2 secondary) | 12 V to 35 V | — |
| Supply Voltage (VCC1 primary) | 3 V to 5.5 V | — |
| Propagation Delay (typ.) | 15 ns | — |
| Delay Matching (typ.) | 30 ns | — |
| Galvanic Isolation | 3000 Vrms (coreless transformer) | — |
| Operating Temperature Range | -40C to +125C | -40 °C to +125 °C |
| Protection Features | Miller clamp, UVLO, DESAT short-circuit protection | — |
| Package | PG-DSO-8-72 (SOIC-8 wide-body) | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Drives | IGBT, MOSFET, SiC MOSFET | — |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Peak Source Current | — | 2 A (typ) |
| Peak Sink Current | — | 4 A (typ) |
| Input Type | — | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| UVLO | — | Yes (VCC and gate-rail monitored) |
| MSL Level | — | MSL3 |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |