1ED3127MU12FXUMA1 vs 1EDN7116GXTMA1 比較
詳細な並列比較: 1ED3127MU12FXUMA1 メーカー: Infineon および 1EDN7116GXTMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | 1ED3127MU12FXUMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | Power MOSFET Drivers | Power MOSFET Drivers |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.74 | $0.84 |
| 機能 | Single-channel isolated gate driver | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| 出力数 | 1 | — |
| 出力構成 | High-side / Low-side, Inverting / Non-Inverting | — |
| Peak Output Current | 10 A (source/sink) | — |
| Continuous Output Current | 9 A | — |
| Supply Voltage (VCC2 secondary) | 12 V to 35 V | — |
| Supply Voltage (VCC1 primary) | 3 V to 5.5 V | — |
| Propagation Delay (typ.) | 15 ns | — |
| Delay Matching (typ.) | 30 ns | — |
| Galvanic Isolation | 3000 Vrms (coreless transformer) | — |
| 動作温度範囲 | -40C to +125C | -40 °C to +125 °C |
| Protection Features | Miller clamp, UVLO, DESAT short-circuit protection | — |
| パッケージ | PG-DSO-8-72 (SOIC-8 wide-body) | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS ステータス | Compliant | Compliant |
| Drives | IGBT, MOSFET, SiC MOSFET | — |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Peak Source Current | — | 2 A (typ) |
| Peak Sink Current | — | 4 A (typ) |
| Input Type | — | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| UVLO | — | Yes (VCC and gate-rail monitored) |
| MSLレベル | — | MSL3 |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |