1ED3127MU12FXUMA1 vs 1EDN7116GXTMA1 对比

详细并排对比 1ED3127MU12FXUMA1 出自 Infineon 和 1EDN7116GXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1ED3127MU12FXUMA1 1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon

1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon

1ED3127MU12FXUMA1 ✓ 量产中

规格对比

参数 1ED3127MU12FXUMA1 1EDN7116GXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.74 $0.84
功能 Single-channel isolated gate driver Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs
输出数量 1 —
输出配置 High-side / Low-side, Inverting / Non-Inverting —
Peak Output Current 10 A (source/sink) —
Continuous Output Current 9 A —
Supply Voltage (VCC2 secondary) 12 V to 35 V —
Supply Voltage (VCC1 primary) 3 V to 5.5 V —
Propagation Delay (typ.) 15 ns —
Delay Matching (typ.) 30 ns —
Galvanic Isolation 3000 Vrms (coreless transformer) —
工作温度范围 -40C to +125C -40 °C to +125 °C
Protection Features Miller clamp, UVLO, DESAT short-circuit protection —
封装 PG-DSO-8-72 (SOIC-8 wide-body) PG-VSON-10-4 (3.0 mm × 3.0 mm)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
Drives IGBT, MOSFET, SiC MOSFET —
Driver Configuration — Non-inverting, single low-side
Number of Drivers — 1
Peak Source Current — 2 A (typ)
Peak Sink Current — 4 A (typ)
Input Type — Truly Differential Input (TDI)
Supply Voltage (VCC) — 4.5 V to 5.5 V
Switch-Node Blocking Voltage — 200 V (max)
Propagation Delay (Typ) — 9 ns
Rise Time (Typ) — 3 ns
Fall Time (Typ) — 3 ns
Quiescent Current (Typ) — 0.6 mA
Miller Clamp — Integrated, active
UVLO — Yes (VCC and gate-rail monitored)
MSL 等级 — MSL3
Target Switch Technology — GaN HEMT (CoolGaN) or Si MOSFET

数据手册与资源

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