1ED3142MU12FXUMA1 vs 1ED3124MC12HXUMA1 Comparison
Detailed side-by-side comparison of 1ED3142MU12FXUMA1 by Infineon and 1ED3124MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1ED3142MU12FXUMA1 - 6.5A Isolated Gate Driver SiC/IGBT | Infineon
1ED3142MU12FXUMA1 β ActiveInfineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 β ActiveSpecification Comparison
| Parameter | 1ED3142MU12FXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $1.45 |
| Product Type | Galvanically Isolated Gate Driver IC | β |
| Number of Channels | 1 | β |
| Peak Source/Sink Output Current | 6.5 A (typical) | β |
| Isolation Technology | Coreless Transformer (CT) | Magnetic coupling (coreless transformer) |
| Isolation Voltage (DigiKey rating) | 3000 Vrms | β |
| Isolation Voltage (Manufacturer datasheet) | 2300 V | β |
| Output Supply Voltage (VCC2-VEE2) | [DATA_NEEDED: max value, typical datasheet 25 V max] | β |
| Input Supply Voltage (VCC1) | [DATA_NEEDED: value] | β |
| Propagation Delay (typical) | 42 ns | β |
| Target Power Switches | SiC MOSFETs, IGBTs, MOSFETs | β |
| Package | PG-DSO-8-72 (wide-body DSO-8) | PG-DSO-8 (DSO-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: junction/ambient range] | β |
| Protection Features | UVLO (output-side), DESAT short-circuit detection | β |
| Output Stage | Separate source/sink pins, totem-pole | β |
| RoHS Status | Compliant | Compliant |
| Family | Infineon EiceDRIVER 1ED31xx | β |
| Channel Type | β | Single-channel |
| Configuration | β | High-side / Low-side (non-inverting) |
| Number of Drivers | β | 1 |
| Number of Outputs | β | 1 |
| Peak Source Current | β | 13.5 A |
| Peak Sink Current | β | 14 A |
| Isolation Voltage (RMS) | β | 5.7 kV |
| Transient Overvoltage | β | 8000 Vpk |
| Supply Voltage (VCC2) | β | 10.5 V to 35 V |
| Supply Current (Max) | β | 1.1 mA |
| Propagation Delay (Typ) | β | 90 ns |
| Rise Time | β | 15 ns |
| Fall Time | β | 30 ns |
| Operating Temperature | β | -40 C to +125 C |
| Protections | β | UVLO, Short-Circuit (DESAT) |
| Target Devices | β | IGBT, SiC MOSFET |