1ED3142MU12FXUMA1 vs 1ED3124MC12HXUMA1 Сравнение
Подробное сравнение бок о бок 1ED3142MU12FXUMA1 от Infineon и 1ED3124MC12HXUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
1ED3142MU12FXUMA1 - 6.5A Isolated Gate Driver SiC/IGBT | Infineon
1ED3142MU12FXUMA1 ✓ Активен
Сравнение характеристик
| Параметр | 1ED3142MU12FXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,94 | $1,45 |
| Product Type | Galvanically Isolated Gate Driver IC | — |
| Number of Channels | 1 | — |
| Peak Source/Sink Output Current | 6.5 A (typical) | — |
| Isolation Technology | Coreless Transformer (CT) | Magnetic coupling (coreless transformer) |
| Isolation Voltage (DigiKey rating) | 3000 Vrms | — |
| Isolation Voltage (Manufacturer datasheet) | 2300 V | — |
| Output Supply Voltage (VCC2-VEE2) | [DATA_NEEDED: max value, typical datasheet 25 V max] | — |
| Input Supply Voltage (VCC1) | [DATA_NEEDED: value] | — |
| Propagation Delay (typical) | 42 ns | — |
| Target Power Switches | SiC MOSFETs, IGBTs, MOSFETs | — |
| Корпус | PG-DSO-8-72 (wide-body DSO-8) | PG-DSO-8 (DSO-8) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | [DATA_NEEDED: junction/ambient range] | — |
| Protection Features | UVLO (output-side), DESAT short-circuit detection | — |
| Output Stage | Separate source/sink pins, totem-pole | — |
| Статус RoHS | Compliant | Compliant |
| Family | Infineon EiceDRIVER 1ED31xx | — |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Количество выходов | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Время нарастания | — | 15 ns |
| Время спада | — | 30 ns |
| Рабочая температура | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |