1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
MPN: 1ED3124MC12HXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.58 | $25.80 |
| 100 | $2.27 | $227.00 |
| 500 | $1.99 | $995.00 |
| 1,000 | $1.74 | $1,740.00 |
| 3,000 | $1.45 | $4,350.00 |
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View Datasheet →1ED3124MC12HXUMA1 Maximum Ratings & Electrical Characteristics
| Channel Type | Single-channel |
| Configuration | High-side / Low-side (non-inverting) |
| Number of Drivers | 1 |
| Number of Outputs | 1 |
| Peak Source Current | 13.5 A |
| Peak Sink Current | 14 A |
| Isolation Technology | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | 5.7 kV |
| Transient Overvoltage | 8000 Vpk |
| Supply Voltage (VCC2) | 10.5 V to 35 V |
| Supply Current (Max) | 1.1 mA |
| Propagation Delay (Typ) | 90 ns |
| Rise Time | 15 ns |
| Fall Time | 30 ns |
| Operating Temperature | -40 C to +125 C |
| Package | PG-DSO-8 (DSO-8) |
| Mounting Type | Surface Mount |
| Protections | UVLO, Short-Circuit (DESAT) |
| Target Devices | IGBT, SiC MOSFET |
| RoHS Status | Compliant |
1ED3124MC12HXUMA1 Pin Configuration
| Pin 1 | VCC1 — Primary-side supply voltage (input-side controller power) |
| Pin 2 | GND1 — Primary-side ground (input-side controller ground) |
| Pin 3 | IN+ — Non-inverting PWM input from controller |
| Pin 4 | IN- — Inverting PWM input (tie to IN+ for non-inverting operation) |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | GND2 — Secondary-side ground (gate-driver output ground, floating domain) |
| Pin 7 | VCC2 — Secondary-side supply voltage (gate-drive power, 10.5-35 V) |
| Pin 8 | OUT — Gate-drive output to IGBT/SiC MOSFET gate |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
1ED3124MC12HXUMA1 is suitable for 6 applications: Industrial Motor Drives, Solar String Inverters, Uninterruptible Power Supplies (UPS), EV Charging Stations, Welding Power Supplies, SiC MOSFET Half-Bridge Modules.
Industrial Motor Drives
The 1ED3124MC12HXUMA1 directly drives IGBT modules in three-phase industrial inverters from 1 kW to 50 kW. Its 14 A sink / 13.5 A source peak current eliminates external booster transistors, while the 5.7 kV isolation protects the MCU/DSP control domain from the 480-690 V AC bus. The 90 ns propagation delay and 30 ns fall time deliver clean switching transitions at 4-16 kHz PWM frequencies typical of variable-frequency drives, reducing switching losses by 10-20% versus discrete gate-driver solutions. The DESAT short-circuit protection reacts within 1.5 µs to clear IGBT shoot-through faults before thermal runaway, a critical function in high-power industrial drives where desaturation events can otherwise destroy modules in milliseconds.
Recommended
Solar String Inverters
In solar string inverters (5-25 kW), the 1ED3124MC12HXUMA1 drives the IGBT or SiC MOSFET half-bridge of the DC-AC conversion stage. The 5.7 kV isolation barrier handles 1500 V DC-link transients from PFC stages, while 14 A peak current supports modules rated to 600 A. The 90 ns delay preserves PWM resolution at 20-50 kHz switching frequencies, enabling higher power density transformers. Integrated UVLO protects the IGBTs from insufficient gate-drive voltage during start-up from cold PV input. The coreless-transformer isolation avoids the aging and CTR-degradation issues of optocoupler-based drivers, extending inverter lifetime beyond the 25-year warranty window required for commercial PV installations.
Recommended
Uninterruptible Power Supplies (UPS)
The 1ED3124MC12HXUMA1 provides the isolation barrier between the low-voltage DSP controller and the high-voltage IGBT bridge in online UPS systems (1-100 kVA). Its 14 A peak current drives 600-1200 V IGBT modules in the inverter stage that synthesizes the AC output waveform. The 5.7 kV withstand voltage protects against the high dv/dt (10-15 kV/µs) transients during bridge switching, while 8000 Vpk transient tolerance handles grid-side surge events. The 90 ns propagation delay preserves the 20 kHz PWM switching pattern needed for low-THD (<2%) AC output, critical for sensitive IT loads. DESAT protection ensures rapid fault clearing within 1.5 µs, preventing IGBT module destruction during overload transfers to bypass mode.
Recommended
EV Charging Stations
In DC fast-charging stations (50-350 kW), the 1ED3124MC12HXUMA1 drives IGBT or SiC MOSFET modules in the isolated DC-DC converter stage that regulates the 200-1000 V battery output. Its 5.7 kV isolation separates the vehicle-side high-voltage bus from the grid-side controller, while 14 A peak current handles 600 A+ modules used in liquid-cooled charging stacks. The 90 ns propagation delay supports the 50-100 kHz switching frequencies of SiC-based designs, reducing magnetics size by 50-70% compared to 20 kHz IGBT designs. Integrated UVLO prevents partial turn-on at low VCC2 during cold-start sequences. The PG-DSO-8 package's 8 mm creepage distance meets IEC 61851-23 reinforced insulation requirements for EV charging.
Recommended
Welding Power Supplies
Welding inverters (200-600 A output) use the 1ED3124MC12HXUMA1 to drive the IGBT half-bridge in the secondary rectification stage. Its 14 A peak current handles the high di/dt (1-2 kA/µs) of arc-strike events without driver desaturation, while the 5.7 kV isolation protects the 16-32 V logic supply from the 400-700 V intermediate bus. The 90 ns delay and tight channel matching maintain the 20-100 kHz switching pattern needed for stable arc characteristics and low spatter. DESAT short-circuit protection reacts within 1.5 µs when the output shorts to the workpiece, preventing IGBT destruction in this harsh-fault environment. The -40 C to +125 C operating range covers welding cabinet thermal extremes.
Recommended
SiC MOSFET Half-Bridge Modules
For high-frequency SiC MOSFET designs (50-200 kHz), the 1ED3124MC12HXUMA1 provides the 14 A peak current needed to charge the SiC gate capacitance (typically 10-50 nC) within 15 ns rise time, minimizing switching transition losses. Its 90 ns propagation delay is acceptable for sub-100 kHz applications but represents the upper bound for higher-frequency designs (consider the 1ED3142MC12HXUMA1 with 70 ns delay for those). The 5.7 kV isolation is required for 800-1200 V SiC modules in traction and renewable applications. The driver's DESAT circuit must be reconfigured for SiC (lower VCE_sat threshold ~3 V vs 7 V for IGBT); Infineon's datasheet includes a SiC-specific application circuit on page 18. PG-DSO-8 package minimizes gate-loop inductance.
Recommended
Recommended Products Summary
Engineering reference data for 1ED3124MC12HXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1ED3142MC12HXUMA1 | 1ED3125MU12FXUMA1 | 2EDL8124GXUMA1 | 2ED21844S06JXUMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-8 | PG-DSO-8 - same | PG-DSO-8 - same | DSO-8 - same | DSO-8 - same |
| Isolation Voltage | 5.7 kV | 5.7 kV | 5.7 kV | 5.7 kV | 4.6 kV |
| Peak Sink Current | 14 A | 18 A | 6 A | 14 A (per channel) | 2.5 A |
| Peak Source Current | 13.5 A | 18 A | 6 A | 14 A (per channel) | 2.5 A |
| Propagation Delay (Typ) | 90 ns | 70 ns | 60 ns | 90 ns | 200 ns |
| Rise Time | 15 ns | 10 ns | 8 ns | 15 ns | 100 ns |
| Fall Time | 30 ns | 20 ns | 8 ns | 30 ns | 100 ns |
| Channel Count | 1 | 1 | 1 | 2 | 2 (half-bridge) |
| Protections | UVLO, DESAT | UVLO, DESAT, OCP | UVLO | UVLO, DESAT | UVLO, OTP |
| Unit Price (1pc) | $2.85 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Higher 14 A peak sink current vs 6 A on GaN-focused variant (vs 1ED3125MU12FXUMA1)
- Better cost-performance balance vs 18 A high-end variant (vs 1ED3142MC12HXUMA1)
- Single-channel simplicity vs dual-channel footprint variants (vs 2EDL8124GXUMA1)
Design Notes
Provide independent decoupling on each supply rail. Place a 1 µF X7R ceramic in parallel with a 100 nF NP0/C0G ceramic within 5 mm of the VCC1 (pin 1) and VCC2 (pin 7) pins. The VCC2 rail (10.5-35 V) supplies the gate-drive output stage and experiences current spikes of 4-6 A during switching transitions; insufficient decoupling will cause VCC2 droop below UVLO threshold (typically 9 V), triggering spurious shutdown. For high-frequency SiC designs, add a 10 µF tantalum or polymer cap adjacent to the local ceramics to handle repetitive surge currents. Avoid sharing VCC2 with other ICs' supply rails - use an isolated DC-DC converter (e.g., 5 V to 15 V) dedicated to the gate driver.
Minimize the gate-driver-to-IGBT/SiC gate-loop inductance to control switching transients. The gate loop consists of OUT (pin 8), the IGBT gate-emitter, and the secondary-side ground return path (pin 6). Route the gate trace on the top layer directly above an unbroken ground plane, with via-stitching along both sides every 5 mm. Keep loop area below 50 mm² to limit overshoot; for SiC MOSFETs at 50+ kHz, target below 20 mm². Place the DESAT-sensing high-voltage diode (e.g., UF4007 or ES1J) within 10 mm of the OUT pin to minimize parasitic inductance. Use 4-layer PCB with continuous ground pour under the driver for best EMI performance.
Do not leave the IN- pin (pin 4) floating - tie it to IN+ (pin 3) for non-inverting operation, or drive it from a complementary PWM output. A floating IN- can pick up noise and cause spurious gate transitions. The DESAT circuit requires a blanking capacitor (typically 100 pF-1 nF) on the DESAT pin to mask the initial VCE transient after turn-on; without it, false desaturation events will shut down the driver. Verify the VCC2 under-voltage lockout threshold in the datasheet (typically 9 V rising, 8 V falling) and ensure your auxiliary supply exceeds the rising threshold with adequate margin (1 V minimum) at cold-start. For IGBTs, use a gate resistor of 10-47 Ω on OUT to limit ringing; for SiC MOSFETs, use 5-15 Ω to achieve 15-30 ns rise times.
Estimated: at 100 kHz switching, 14 A peak gate current, and VCC2 = 15 V, the 1ED3124MC12HXUMA1 dissipates approximately 0.4-0.6 W in the PG-DSO-8 package (calculated as 0.5 × Qg × Vgs × fsw + quiescent losses). The PG-DSO-8 thermal resistance θJA is approximately 120 C/W on a 4-layer JEDEC EIA/JESD51 2s2p board, giving a 50-70 C junction temperature rise above ambient. No heatsink is required, but provide 50 mm² of top-layer copper on the GND2 (pin 6) thermal pad to reduce θJA by 20-30%. Maximum junction temperature is 150 C; derate operation above 100 C ambient. Verify with a thermal camera during prototype validation.
Compliance Information
RoHS compliant per Infineon product page and DigiKey listing. Not AEC-Q100 qualified - this is an industrial-grade part; automotive variants (if needed) require a separate Infineon part number. Isolation per IEC 60747-17 (VDE 0884-11).
