1ED3890MC12MXUMA1 vs 2ED21064S06JXUMA1 Comparison
Detailed side-by-side comparison of 1ED3890MC12MXUMA1 by Infineon and 2ED21064S06JXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1ED3890MC12MXUMA1
1ED3890MC12MXUMA1 - 5.7kV Isolated Gate Driver, Β±9A | Infineon
1ED3890MC12MXUMA1 β ActiveInfineon
2ED21064S06JXUMA1
2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
2ED21064S06JXUMA1 β ActiveSpecification Comparison
| Parameter | 1ED3890MC12MXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.30 | $0.85 |
| Isolation Voltage (Vrms) | 5700 Vrms | β |
| Peak Output Current (Source/Sink) | Β±9 A | β |
| Number of Channels | 1 | β |
| Output Configuration | High-Side Non-Inverting | β |
| Package | PG-DSO-16-28 (16-pin wide-body DSO) | PG-DSO-14 (14-pin SOIC) |
| Mounting Type | Surface Mount (Tape & Reel) | Surface Mount |
| Isolation Technology | Coreless transformer (galvanic) | β |
| Configurable Interface | I2C (DESAT, UVLO, drive voltage) | β |
| Protection Features | DESAT short-circuit, Active Miller clamp, Soft Turn-Off (STO), UVLO | β |
| Target Power Devices | IGBT, SiC MOSFET, MOSFET | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Propagation Delay | [DATA_NEEDED: typical propagation delay] | β |
| Common-Mode Transient Immunity (CMTI) | [DATA_NEEDED: CMTI rating] | β |
| Supply Voltage (VCC side) | [DATA_NEEDED: VCC range] | β |
| Output Drive Voltage (VOUT) | [DATA_NEEDED: VOUT range] | β |
| RoHS Status | Compliant | ROHS3 Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Lead-Free | Yes | β |
| Function | β | High-Side and Low-Side Gate Driver |
| Configuration | β | Half-Bridge (2 outputs, non-inverting) |
| Topology | β | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | β | 650 V |
| Supply Voltage (VCC) | β | 10 V to 20 V |
| Source Current (typical) | β | 0.29 A |
| Sink Current (typical) | β | 0.7 A |
| Rise Time (typical) | β | [DATA_NEEDED: rise time] |
| Fall Time (typical) | β | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | β | 100 ns |
| Channel-to-Channel Delay Match | β | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | β | Yes (both channels) |
| Bootstrap Diode | β | Integrated |
| Input Logic Compatibility | β | 3.3 V / 5 V CMOS |
| Operating Temperature | β | -40C to +125C |
| Negative Gate Drive Robustness | β | -0.7 V |