1ED3890MC12MXUMA1 - 5.7kV Isolated Gate Driver, ±9A | Infineon
MPN: 1ED3890MC12MXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.88 | $6.88 |
| 10 | $6.2 | $62.00 |
| 100 | $5.45 | $545.00 |
| 500 | $4.82 | $2,410.00 |
| 1,000 | $4.3 | $4,300.00 |
1ED3890MC12MXUMA1 Overview
An isolated gate driver is a power-semiconductor interface IC that provides a high-voltage barrier between a low-voltage controller (MCU, DSP, FPGA) and the gate of a switching power transistor. Isolated drivers sit in the power-management hierarchy above non-isolated gate drivers and below the digital control domain; they translate PWM logic-level signals across an isolation barrier while delivering high peak currents to rapidly charge and discharge the gate capacitance of large IGBT/SiC modules. The 5.7 kVrms isolation rating is the maximum allowable insulation withstand voltage and is selected per IEC 60747-17 for reinforced insulation in 600V/1200V class power converters.
Key features of the 1ED3890MC12M include ±9 A peak gate-drive current (sufficient for switching 200 A-class IGBT modules in <100 ns), DESAT short-circuit detection with adjustable threshold and blanking time, Active Miller clamp to prevent parasitic turn-on in half-bridge configurations, and a programmable soft-turn-off (STO) on fault. I2C programmability provides access to DESAT threshold, DESAT blanking, gate-drive voltage levels, UVLO thresholds, and fault-clearing behavior, allowing a single IC to be repurposed across multiple platforms.
Typical applications include industrial motor drives (servo, VFD), solar string and central inverters, EV onboard chargers and traction inverters, UPS systems, induction heating, and welding power supplies. When designing with this driver, carefully observe PCB creepage/clearance on the package; the PG-DSO-16-28 wide-body package provides the necessary 8 mm clearance for reinforced isolation, but external copper near high-voltage traces must still maintain adequate spacing. Always use a low-ESL bypass capacitor (100 nF X7R minimum) directly at VCC and VBS pins to handle the ±9 A peak transients without voltage collapse.
This page consolidates distributor pricing, drop-in alternatives, and practical design notes for engineers evaluating the 1ED3890MC12MXUMA1 — content that goes beyond the manufacturer datasheet alone.
Drop-in alternatives for 1ED3890MC12MXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 1ED3890MC12MXUMA1 (same form factor and footprint) — differing in Package, Isolation Technology, Configuration, Operating Temperature, Mounting Type.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
1ED3890MC12M
✅ Drop-In📋 Reference alternative (not in catalog)
1ED3142MC12HXUMA1
✅ Drop-In✓ In Stock
$1.32 / Unit
View Datasheet →1ED3124MC12HXUMA1
✅ Drop-In✓ In Stock
$1.45 / Unit
View Datasheet →1ED020I12B2XUMA1
✅ Drop-In✓ In Stock
$2.65 / Unit
View Datasheet →2ED21064S06JXUMA1
✅ Drop-In✓ In Stock
$0.85 / Unit
View Datasheet →1ED3890MC12MXUMA1 Maximum Ratings & Electrical Characteristics
| Isolation Voltage (Vrms) | 5700 Vrms |
| Peak Output Current (Source/Sink) | ±9 A |
| Number of Channels | 1 |
| Output Configuration | High-Side Non-Inverting |
| Package | PG-DSO-16-28 (16-pin wide-body DSO) |
| Mounting Type | Surface Mount (Tape & Reel) |
| Isolation Technology | Coreless transformer (galvanic) |
| Configurable Interface | I2C (DESAT, UVLO, drive voltage) |
| Protection Features | DESAT short-circuit, Active Miller clamp, Soft Turn-Off (STO), UVLO |
| Target Power Devices | IGBT, SiC MOSFET, MOSFET |
| RoHS Status | Compliant |
| Lead-Free | Yes |
1ED3890MC12MXUMA1 Pin Configuration
| Pin 1 | VDD1 — Input-side supply voltage (low-voltage domain) |
| Pin 2 | GND1 — Input-side ground |
| Pin 3 | IN+ — Non-inverting PWM input |
| Pin 4 | IN- — Inverting PWM input (or tied to IN+ for non-inverting) |
| Pin 5 | SCL — I2C clock (configurable parameters) |
| Pin 6 | SDA — I2C data (configurable parameters) |
| Pin 7 | FAULT/RDY — Open-drain fault or ready output |
| Pin 8 | NC — Not connected |
| Pin 9 | VCC2 — Output-side supply voltage |
| Pin 10 | GND2 — Output-side ground |
| Pin 11 | VOUT — Gate drive output |
| Pin 12 | DESAT — Desaturation detection input |
| Pin 13 | MLAMP — Active Miller clamp output |
| Pin 14 | STO — Soft turn-off control |
| Pin 15 | VB — Bootstrap supply for high-side drive |
| Pin 16 | VS — High-side floating supply return |
Typical Applications
1ED3890MC12MXUMA1 is suitable for 6 applications: Industrial Motor Drives (VFD/Servo), Solar String and Central Inverters, EV Onboard Chargers and Traction Inverters, Uninterruptible Power Supplies (UPS), Induction Heating and Welding Power, Industrial SMPS and PFC Stages.
Industrial Motor Drives (VFD/Servo)
The 1ED3890MC12MXUMA1 is ideally suited for driving IGBT modules in industrial variable-frequency drives (VFDs) and servo amplifiers. The 5700 Vrms reinforced isolation safely separates the low-voltage MCU/DSP control domain from the 600V/1200V DC bus switching stage, while the ±9 A peak drive current rapidly charges the gate capacitance of 200A–600A class IGBT modules in under 100 ns. Built-in DESAT short-circuit detection with programmable blanking time is critical for IGBT fault protection in motor drives where shoot-through events can destroy modules within microseconds. The integrated Active Miller clamp prevents parasitic turn-on in half-bridge configurations during high dV/dt transitions, a common failure mode in industrial drives operating at high switching frequencies.
Recommended
Solar String and Central Inverters
In solar PV inverter applications, the 1ED3890MC12MXUMA1 drives the high-side and low-side IGBTs or SiC MOSFETs in three-phase inverter stages converting 600V–1500V DC bus to 230V/480V AC grid. The 5700 Vrms isolation rating per IEC 60747-17 satisfies reinforced insulation requirements for grid-tied inverters, while the ±9 A peak drive current supports high-efficiency SiC MOSFET switching at 50–100 kHz, reducing magnetic component size. The I2C programmability allows the same driver IC to be reused across multiple inverter platforms with different IGBT/SiC device selections, simplifying BOM management. Soft Turn-Off (STO) on DESAT fault safely ramps down the gate during short-circuit events, preventing dangerous dv/dt spikes on the DC bus that could damage PV modules and EMI filters.
Recommended
EV Onboard Chargers and Traction Inverters
Electric vehicle onboard chargers and traction inverters rely on the 1ED3890MC12MXUMA1 for safe, high-current gate driving of SiC MOSFET or IGBT power modules. The 5700 Vrms isolation provides the reinforced barrier required between the vehicle's LV battery/control domain and the HV traction bus (typically 400V or 800V). The ±9 A peak drive enables fast switching of SiC MOSFETs at 100–200 kHz, directly improving inverter efficiency and power density — both critical metrics for EV range. The Active Miller clamp and DESAT protection are essential in traction inverter environments where high dV/dt during fast switching can cause catastrophic shoot-through. I2C configuration allows the same driver to support different SiC MOSFET generations without hardware changes, future-proofing the inverter design as new SiC devices become available.
Recommended
Uninterruptible Power Supplies (UPS)
The 1ED3890MC12MXUMA1 is widely used in double-conversion UPS systems where it drives the inverter-stage IGBTs that convert battery DC to conditioned AC output. The 5700 Vrms reinforced isolation is mandatory in UPS systems because the controller PCB is accessible to service personnel and must be safely isolated from the 400V–800V DC bus. The ±9 A peak drive current supports the high-switching-frequency designs required for compact, high-efficiency UPS units used in data centers and medical facilities. DESAT protection with adjustable blanking time protects against the short-circuit events that can occur when output filter capacitors fail or load faults develop, while the programmable soft-turn-off prevents destructive dv/dt on the DC bus during fault clearance.
Recommended
Induction Heating and Welding Power
Industrial induction heaters and welding power supplies demand high-performance gate drivers, and the 1ED3890MC12MXUMA1 delivers the ±9 A peak drive current necessary for switching the high-current IGBT modules used in resonant tank circuits. The 5700 Vrms reinforced isolation protects the digital control board (often a microcontroller or DSP) from the dangerous voltages present in resonant tank topologies that can exceed 1000V peak. The Active Miller clamp is particularly valuable in welding applications where long cables between the inverter and the welding torch create severe dV/dt stress and Miller-current-induced parasitic turn-on. The I2C programmability of DESAT threshold and blanking time allows optimization for the specific IGBT module used, maximizing both protection sensitivity and noise immunity.
Recommended
Industrial SMPS and PFC Stages
The 1ED3890MC12MXUMA1 serves as a high-side gate driver in industrial switched-mode power supplies (SMPS) and power-factor-correction (PFC) boost stages operating at 400V–800V. The reinforced 5700 Vrms isolation enables direct interface to digital controllers without additional isolation barriers, simplifying PFC stage design. The ±9 A peak drive supports fast switching of SiC MOSFETs in next-generation totem-pole PFC stages targeting 99% efficiency — critical for meeting 80 PLUS Titanium and EU Lot 9 efficiency standards. The Active Miller clamp prevents shoot-through in bridgeless totem-pole topologies where high dV/dt transitions during AC line zero-crossing events can otherwise trigger false turn-on. The integrated DESAT protection provides short-circuit detection in less than 1 microsecond, essential for protecting expensive SiC MOSFETs from catastrophic failure.
Recommended
Recommended Products Summary
Engineering reference data for 1ED3890MC12MXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1ED3890MC12M | 1ED3142MC12HXUMA1 | 1ED3124MC12HXUMA1 | 1ED020I12B2XUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-16-28 | PG-DSO-16-28 - same | PG-DSO-16-28 - same | PG-DSO-16-28 - same | PG-DSO-16-28 - same | DSO-16 wide-body - same |
| Peak Output Current | ±9 A | ±9 A | ±4 A | ±13 A | ±2 A | ±0.5 A |
| Isolation Voltage | 5700 Vrms | 5700 Vrms | 5700 Vrms | 5700 Vrms | 1200 Vrms | 600 Vrms |
| Number of Channels | 1 | 1 | 1 | 1 | 1 | 2 (half-bridge) |
| I2C Configurable | Yes | Yes | Yes | Yes | No | No |
| DESAT Protection | Yes (programmable) | Yes (programmable) | Yes | Yes (programmable) | Yes | No |
| Active Miller Clamp | Yes | Yes | Yes | Yes | No | No |
| Unit Price (USD) | 6.88 | 6.50 (typical) | 5.20 | 7.50 | 3.20 | 2.80 |
Key Differentiators
- Highest peak drive current in Infineon's DSO-16 wide-body isolated driver family (vs 1ED3142MC12HXUMA1)
- I2C configurability eliminates hardware design rework across product variants (vs 1ED020I12B2XUMA1)
- Reinforced 5700 Vrms isolation enables 1200V-class power converter designs (vs 2ED21064S06JXUMA1)
Design Notes
The PG-DSO-16-28 wide-body package provides approximately 8 mm creepage between input and output sides — the minimum required for reinforced isolation per IEC 60747-17. Do not route any high-voltage trace under the package, and maintain at least 8 mm clearance between input-side copper (pins 1–8) and output-side copper (pins 9–16) on all PCB layers. Use a slot in the PCB under the package if additional isolation margin is required for pollution degree 2 environments.
Place a 100 nF X7R ceramic bypass capacitor as close as possible to each supply pin (VDD1, VCC2, VB) to handle the ±9 A peak gate-drive transients. Use low-ESL capacitors (X7R 100V or higher) and keep the loop area from supply pin through capacitor to ground below 10 mm². A bulk electrolytic (≥10 µF) should be placed within 5 mm of the local ceramic bypass. Insufficient decoupling causes voltage collapse during high dI/dt events, leading to gate-drive undervoltage and MOSFET shoot-through.
Estimated: at 100 kHz switching frequency driving a 200 A IGBT module with Qg = 1000 nC, the gate-drive power dissipation is approximately P = Qg × Vg × f = 1000 nC × 15V × 100 kHz = 1.5 W. With PG-DSO-16-28 theta_JA of approximately 80 °C/W (estimated, 4-layer PCB with minimum copper pour), junction temperature rise is ~120 °C above ambient. Increase copper pour on output-side pins or add thermal vias to reduce theta_JA to ~50 °C/W for reliable operation at high ambient temperatures.
Route the DESAT sense trace directly to the IGBT collector (or SiC MOSFET drain) with a short, low-inductance path. Add a Schottky blocking diode (e.g., BAS21) in series with the DESAT pin to prevent high-voltage negative transients during switching. The DESAT blanking capacitor value should be selected per IGBT/SiC datasheet short-circuit capability — typically 47 pF to 220 pF provides 0.5 µs to 2 µs blanking time, masking the normal turn-on transient while detecting real short-circuit events.
Do not leave the SCL/SDA I2C pins floating — they must be pulled up to VDD1 via 4.7 kΩ resistors even if I2C is unused, or the part may enter an undefined configuration. The Active Miller clamp output (MLAMP) must be connected to the gate of the switching device, not the source/emitter, or it will not function. When using the high-side drive with bootstrap (VB-VS), ensure the bootstrap capacitor (≥1 µF ceramic) is refreshed every switching cycle by a low-side pulse of sufficient duration (typically >1 µs).
Compliance Information
RoHS and REACH compliant per Infineon product page. Industrial grade only — not AEC-Q100 qualified for automotive applications. Coreless transformer isolation rated per IEC 60747-17 for reinforced insulation.
