2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
MPN: 2ED21064S06JXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.7735 | $1.77 |
| 10 | $1.59 | $15.90 |
| 100 | $1.39 | $139.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $0.99 | $990.00 |
| 2,500 | $0.85 | $2,125.00 |
Drop-in alternatives for 2ED21064S06JXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →2ED21064S06JXUMA1 Maximum Ratings & Electrical Characteristics
| Function | High-Side and Low-Side Gate Driver |
| Configuration | Half-Bridge (2 outputs, non-inverting) |
| Topology | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | 650 V |
| Supply Voltage (VCC) | 10 V to 20 V |
| Source Current (typical) | 0.29 A |
| Sink Current (typical) | 0.7 A |
| Propagation Delay (typical) | 100 ns |
| Under-Voltage Lockout | Yes (both channels) |
| Bootstrap Diode | Integrated |
| Input Logic Compatibility | 3.3 V / 5 V CMOS |
| Operating Temperature | -40C to +125C |
| Package | PG-DSO-14 (14-pin SOIC) |
| Mounting Type | Surface Mount |
| RoHS Status | ROHS3 Compliant |
| Negative Gate Drive Robustness | -0.7 V |
2ED21064S06JXUMA1 Pin Configuration
| Pin 1 | HIN — High-side logic input (3.3V/5V compatible) |
| Pin 2 | LIN — Low-side logic input (3.3V/5V compatible) |
| Pin 3 | GND — Ground reference for VCC and low-side driver |
| Pin 4 | VCC — Logic and gate-drive supply, 10V to 20V |
| Pin 5 | LO — Low-side gate-drive output |
| Pin 6 | VS — High-side floating supply return / bootstrap return |
| Pin 7 | HO — High-side gate-drive output |
| Pin 8 | VB — High-side floating bootstrap supply |
| Pin 9 | NC — Not connected (per datasheet) |
| Pin 10 | NC — Not connected (per datasheet) |
| Pin 11 | NC — Not connected (per datasheet) |
| Pin 12 | NC — Not connected (per datasheet) |
| Pin 13 | NC — Not connected (per datasheet) |
| Pin 14 | NC — Not connected (per datasheet) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
2ED21064S06JXUMA1 is suitable for 7 applications: Offline SMPS Half-Bridge Converter, Motor Drive Inverter Stage, Induction Heating Cooktop, Solar Micro-Inverter, LED Lighting Ballast, eMobility Auxiliary Power Supply, Telecom Rectifier.
Offline SMPS Half-Bridge Converter
The 2ED21064S06JXUMA1 drives the high-side and low-side MOSFETs in 600 V-class half-bridge SMPS for server, telecom, and industrial power supplies. The 650 V offset rating handles rectified 400 V AC mains, while the 0.7 A sink current accelerates MOSFET turn-off to reduce switching losses. The integrated bootstrap diode eliminates one external component, reducing BOM cost and PCB area in LLC and phase-shifted full-bridge topologies.
Recommended
Motor Drive Inverter Stage
In variable-frequency drives for industrial motors and home appliances, the 2ED21064S06JXUMA1 provides gate drive for the half-bridge legs of a three-phase IGBT inverter. The 650 V rating supports 400 V bus operation, and the matched propagation delay ensures symmetric switching that minimizes current imbalance between phases. The integrated bootstrap diode simplifies the high-side supply network for each phase leg, reducing PCB complexity in 1.5 kW to 7.5 kW drives.
Recommended
Induction Heating Cooktop
Induction heating cooktops operate as resonant half-bridge inverters switching at 20 kHz to 100 kHz into an induction coil. The 2ED21064S06JXUMA1 drives the IGBT half-bridge with 650 V rating for 230 V AC mains input and 0.7 A sink current for fast switching edges. The integrated bootstrap diode saves PCB space in the compact cooktop form factor, and the matched delay ensures clean resonant switching without shoot-through.
Recommended
Solar Micro-Inverter
In grid-tied solar micro-inverters, the 2ED21064S06JXUMA1 drives the primary-side MOSFETs of a push-pull or half-bridge converter fed from a 30 V to 60 V PV panel. The driver is suitable for sub-1 kW residential micro-inverters where the 650 V rating provides ample margin and the integrated bootstrap simplifies the BOM. When paired with a CoolMOS primary MOSFET, the design achieves >95% peak efficiency with low standby loss.
Recommended
LED Lighting Ballast
Commercial LED drivers and high-intensity discharge (HID) ballasts use the 2ED21064S06JXUMA1 to drive the half-bridge in PFC plus LLC converter stages. The 650 V offset rating covers 230 V AC mains, and the 0.7 A sink current drives MOSFETs in the 600 V / 5 A to 15 A range. The integrated bootstrap diode reduces component count, which is critical for compact driver enclosures with strict BOM cost targets.
Recommended
eMobility Auxiliary Power Supply
Electric vehicles require isolated auxiliary DC-DC converters from the 400 V traction battery to 12 V/24 V subsystems. The 2ED21064S06JXUMA1 drives the primary-side half-bridge MOSFETs in a 3 kW to 6 kW CLLC topology, with the 650 V rating supporting 400 V bus and transient surges. The matched propagation delay helps meet EMI specifications, while the integrated bootstrap diode reduces component count in the densely-packed auxiliary module.
Recommended
Telecom Rectifier
In -48 V telecom rectifier modules, the 2ED21064S06JXUMA1 can drive the high-voltage side of an LLC converter when paired with a high-voltage input stage. The 650 V rating handles bulk rectified mains, and the integrated bootstrap diode simplifies the auxiliary supply chain. For higher-power telecom rectifier designs above 3 kW, consider the higher-current 2ED21844S06JXUMA1 variant for reduced switching losses.
Recommended
Recommended Products Summary
Engineering reference data for 2ED21064S06JXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2ED2106S06FXUMA1 | 2ED21844S06JXUMA1 | 2EDN7524GXTMA1 | 1EDN7136UXTSA1 | 1ED3142MC12HXUMA1 |
|---|---|---|---|---|---|---|
| Package | PG-DSO-14 (14-pin SOIC) | PG-DSO-14 - same | PG-DSO-14 - same | PG-DSO-14 - same | PG-DSO-14 - same | PG-DSO-14 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Maximum Offset Voltage | 650 V | 650 V | 650 V | 650 V | 650 V | 1200 V |
| Source Current | 0.29 A | 0.29 A | 2.5 A | 4 A | 0.7 A | 5 A |
| Sink Current | 0.7 A | 0.7 A | 2.5 A | 4 A | 1.7 A | 5 A |
| Propagation Delay | 100 ns | 100 ns | 120 ns | 30 ns | 55 ns | 80 ns |
| Bootstrap Diode | Integrated | Integrated | Integrated | Not integrated | Not integrated (single-channel) | Integrated |
| Channel Configuration | Half-bridge (HS + LS) | Half-bridge | Half-bridge | Dual low-side | Single high-side | Single isolated |
| Supply Voltage Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 4.5 V to 20 V | 8 V to 20 V | 10 V to 20 V |
Key Differentiators
- Integrated bootstrap diode eliminates external component (vs 2EDN7524GXTMA1)
- Matched channel propagation delay for symmetric switching (vs 1EDN7136UXTSA1)
- Higher drive current than baseline 2ED2106 family while staying in PG-DSO-14 (vs 2ED2106S06FXUMA1)
Design Notes
Place a 1 uF low-ESR ceramic bypass capacitor as close as possible to the VCC pin (pin 4) and ground. Add a 0.1 uF ceramic capacitor in parallel for high-frequency noise suppression. Place the bootstrap capacitor (1 uF to 10 uF ceramic) directly between the VB (pin 8) and VS (pin 6) pins with the shortest possible trace. Use a wide ground plane to minimize parasitic inductance on the high-current gate-drive return path.
Do not exceed the 650 V absolute maximum rating between VB and VS, including transient overshoot from the half-bridge switching node. Add a transient voltage suppressor (TVS) or snubber across the high-side MOSFET if ringing exceeds 80% of the rating. Avoid routing the HIN/LIN logic traces near the high-voltage switching node to prevent capacitive coupling that could cause shoot-through. Verify dead-time control in the PWM controller to prevent cross-conduction.
At continuous switching at 100 kHz into a 10 nC gate charge load, the driver dissipates approximately (10V * 10nC * 2 * 100kHz) = 20 mW per channel. The PG-DSO-14 package has a thermal resistance of approximately 80 C/W, resulting in a 1.6 C junction temperature rise above ambient - well within the 150 C junction rating. For high-frequency designs above 500 kHz, evaluate total switching losses and provide adequate copper pour for thermal management.
Compliance Information
ROHS3 compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications, choose an AEC-Q100 qualified variant from the Infineon EiceDRIVER automotive portfolio.
